As atmospheric moisture capacity is highly sensitive to rising temperatures, precipitation extremes are widely projected to intensify with a warming climate and thus altering the flooding generation regime. Previous works seldomly focused on bivariate flood quantiles under climate change at a national scale, and fewer flooding projections quantified the estimation uncertainty sourced from sample size limitation. This study systematically investigates the changes in bivariate quantiles of flood peak and volume with incorporation of sampling uncertainty for 151 catchments over China, with climate trajectories projected by a set of multi-model ensemble under representative concentration pathway (RCP) 8.5. After correcting the systematical biases of eight CMIP5 GCM outputs, four state-of-the-art hydrological models are driven and validated for each catchment, and the best-simulation model is selected to project future streamflow scenarios. The copula function is employed to construct the joint distribution of flood peak and volume, and then the most likely realizations of bivariate quantiles are derived under different Joint Return Periods (JRPs), with the uncertainty envelope quantified with the area of 90% confidence ellipse by a copula-based parametric bootstrapping uncertainty (C-PBU) approach. Our results project an overall ascending trend of temperature and precipitation over China, and the bivariate flood quantiles and corresponding estimation uncertainty of most catchments in the future period (2056–2100) are much larger than the baseline (1961–2005), despite accompanied by substantial climate model uncertainty and spatial variability in magnitude. Many basins would be subjected to a dramatic increase of flood magnitude by over 50%, while only few basins are projected to experience a decreasing flood risk, suggesting an urgent need to increase societal resilience to a warming climate over China.@en

This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a machine-learning model. An experiment was performed to validate the feasibility of the numerical model. Secondly, a single-factor analysis was conducted to investigate the effects of process parameters, including the deposition temperature, inlet-flow volume, rotational speed of the susceptor, and cavity pressure, on the quality of the 4H–SiC epitaxial layer. Finally, a machine learning algorithm, the ant colony optimization-back propagation neural network (ACO–BPNN), was employed to develop the input/output model and optimize process parameters for obtaining a high-quality epitaxial layer and reducing the optimization cycle and costs. Notably, the optimized process was validated by real experiments, where the error between calculation and experiment is 4.03 % for deposition rate and 0.49 % for coefficient of variation, respectively. The results highlight the model as reliable and lay the foundation for the CVD growth of the 4H–SiC epitaxial layer.@en

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using the finite-element method. A three-dimensional time-dependency model is built for the accuracy of simulation, and the effects of 11 relative coil locations (−50, −28, −18, −10, −4,0,4,10,18,28, and 50 mm) on heating efficiency and temperature uniformity of the substrate are analyzed. Results indicate that the suitable relative location between the center of coil and that of the substrate to achieve optimum temperature uniformity is −4 mm, and 18 mm to obtain the highest heating efficiency. To increase the heating efficiency and temperature uniformity of the substrate, the structure of the reactor was analyzed and optimized. It is observed that both heating efficiency and temperature uniformity can be effectively improved by adding a graphite pillar inside the down susceptor.@en