Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Conference paper (2023)

Authors

Zhuorui Tang Jihua Laboratory, Fudan University
Jing Tian Fudan University
Chaobin Mao Jihua Laboratory
Nan Zhang Jihua Laboratory
Jiyu Huang Jihua Laboratory
J. Fan Research Institute of Fudan University, Ningbo, Electronic Components, Technology and Materials - EEMCS , Fudan University
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2023 Zhuorui Tang, Jing Tian, Chaobin Mao, Nan Zhang, Jiyu Huang, J. Fan, Kouchi Zhang
DOI
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https://doi.org/10.1109/EuroSimE56861.2023.10100813
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Published Date

2023

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using the finite-element method. A three-dimensional time-dependency model is built for the accuracy of simulation, and the effects of 11 relative coil locations (−50, −28, −18, −10, −4,0,4,10,18,28, and 50 mm) on heating efficiency and temperature uniformity of the substrate are analyzed. Results indicate that the suitable relative location between the center of coil and that of the substrate to achieve optimum temperature uniformity is −4 mm, and 18 mm to obtain the highest heating efficiency. To increase the heating efficiency and temperature uniformity of the substrate, the structure of the reactor was analyzed and optimized. It is observed that both heating efficiency and temperature uniformity can be effectively improved by adding a graphite pillar inside the down susceptor.