M.C. Martinez Velarte
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Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators
Experimental pitfalls and results
Recently, the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy and spectroscopy experiments performed on Tl-doped Bi2Te3, a three-dimensional topological insulator which becomes superconducting in the bulk at TC=2.3 K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy ED=-(118±1) meV and a Dirac velocity vD=(4.7±0.1)×105 m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both TC and μ0HC strongly deviate from the corresponding bulk values. Furthermore, in spite of a critical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is caused only by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi2Se3. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.
We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.