AT

A. Tosato

4 records found

Authored

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by ex ...

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurement ...

We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities (2.0-11×1011cm-2) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 4 ...

Shallow and Undoped Germanium Quantum Wells

A Playground for Spin and Hybrid Quantum Technology

Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electric ...