SL
S.A. Lindner
Authored
19 records found
Per-pixel time-to-digital converter (TDC) architectures have been exploited by single-photon avalanche diode (SPAD) sensors to achieve high photon throughput, but at the expense of fill factor, pixel pitch and readout efficiency. In contrast, TDC sharing architecture usually feat
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We present a complete pixel based on a singlephoton avalanche diode (SPAD) fabricated in a backsideilluminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65 nm image sensor technology and a data processing tier in 40 nm CMOS. Using a simp
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We present a complete pixel based on a singlephoton avalanche diode (SPAD) fabricated in a backsideilluminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65 nm image sensor technology and a data processing tier in 40 nm CMOS. Using a simp
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A 252 × 144 single-photon avalanche diode (SPAD) pixel FLASH LiDAR is implemented in 180nm CMOS with 28.5μm pixel pitch and 28% fill factor. The sensor includes a collision detection bus with dynamic reallocation of 48.8 ps dual-clock time-to-digital converters (TDCs). It can ope
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A 252 × 144 single-photon avalanche diode (SPAD) pixel FLASH LiDAR is implemented in 180nm CMOS with 28.5μm pixel pitch and 28% fill factor. The sensor includes a collision detection bus with dynamic reallocation of 48.8 ps dual-clock time-to-digital converters (TDCs). It can ope
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A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
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A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
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A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
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A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
...
A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
...
A 252 × 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps resolution (LSB). Each 126
...
A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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A multipurpose monolithic array of 2×2 multi-channel digital silicon photomultipliers (MD-SiPMs) fabricated in 40nm CMOS technology is presented. Each MD-SiPM comprises 64×64 smart pixels connected to 128 low-power 45ps sliding-scale time-to-digital converters (TDCs). The MD-SiPM
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Fluorescence molecular tomography (FMT) emerges as a powerful non-invasive imaging tool with the ability to resolve fluorescence signals from sources located deep in living tissues. Yet, the accuracy of FMT reconstruction depends on the deviation of the assumed optical properties
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