Detecting Unique RRAM Faults

Abstract

Resistive Random-Access Memory (RRAM) is an emerging memory technology that has the possibility to compete with mainstream memory technologies such as Dynamic Random-Access Memory (DRAM) and flash memory. The reason why RRAM has not seen mass adoption yet is due to its defect-prone nature. The resistance of RRAM can assume any value within its operating range and its resistance can be divided into five states instead of the regular two logic states. Conventional test techniques are incapable of detecting unique faults due to their inability to distinguish between all five cell states, resulting in a large number of test escapes. Therefore, new test methods, such as Design-For-Testability (DFT), need to be developed to reduce the number of test escapes and ensure customer satisfaction. This work proposes two new DFTs: Parallel-Reference Read (PRR) and Closed-Loop Write (CLW). The PRR DFT is a replacement for the regular read circuit, which enables the detection of all five cell states, while the CLW DFT is an addition to the regular write circuit, which introduces feedback during the write operation. From these two DFTs, the PRR DFT is selected for further development and its design is validated. From the validation, it is concluded that the PRR DFT can detect all five cell states. Moreover, under process variations, the PRR DFT will provide the correct output in 95.90% of the cases. Furthermore, the PRR DFT improves the overall resistive-defect detection capability by 14.79% when compared to a regular read circuit. Finally, the PRR DFT offers 100% identified fault coverage while only requiring 4N write operations, 5N read operations and an area overhead of 14N_c transistors, where N and N_c are the total number of cells and the total number of columns in the RRAM array, respectively.