Cryo-CMOS Voltage References for the Ultrawide Temperature Range From 300 K Down to 4.2 K
J. van Staveren (TU Delft - QuTech Advanced Research Centre, QCD/Sebastiano Lab)
P.M. Padalia (OLD QCD/Charbon Lab, TU Delft - QuTech Advanced Research Centre)
Edoardo Charbon (QCD/Sebastiano Lab, EPFL Switzerland, Kavli institute of nanoscience Delft)
Carmina García Almudever (QCD/Sebastiano Lab, TU Delft - QuTech Advanced Research Centre)
G. Scappucci (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Masoud Babaie (TU Delft - QuTech Advanced Research Centre, TU Delft - Electronics)
F Sebastiano (TU Delft - QuTech Advanced Research Centre, TU Delft - Quantum Circuit Architectures and Technology)
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Abstract
This article presents a family of sub-1-V, fully-CMOS voltage references adopting MOS devices in weak inversion to achieve continuous operation from room temperature (RT) down to cryogenic temperatures. Their accuracy limitations due to curvature, body effect, and mismatch are investigated and experimentally validated. Implemented in 40-nm CMOS, the references show a line regulation better than 2.7%/V from a supply as low as 0.99 V. By applying dynamic element matching (DEM) techniques, a spread of 1.2% (3σ ) from 4.2 to 300 K can be achieved, resulting in a temperature coefficient (TC) of 111 ppm/K. As the first significant statistical characterization extending down to cryogenic temperatures, the results demonstrate the ability of the proposed architectures to work under cryogenic harsh environments, such as space- and quantum-computing applications.
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