High Volume Electrical Characterization of Semiconductor Qubits

Conference paper (2019)

Authors

R. Pillarisetty Intel Labs
H.C. George Intel Labs
Tom Watson Intel Labs
L. Lampert Intel Labs
T.S. Krähenmann Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, Intel Labs, QCD/Vandersypen Lab - QuTech Advanced Research Centre
A.M.J. Zwerver QCD/Vandersypen Lab - QuTech Advanced Research Centre , Intel Labs, Kavli institute of nanoscience Delft, QuTech Advanced Research Centre
M. Veldhorst Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QCD/Veldhorst Lab - QuTech Advanced Research Centre , Intel Labs
G. Scappucci Intel Labs, Kavli institute of nanoscience Delft, QCD/Scappucci Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre
L.M.K. Vandersypen Intel Labs, QN/Vandersypen Lab - AS , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QCD/Vandersypen Lab - QuTech Advanced Research Centre
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Research Group
QCD/Vandersypen Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2019 R. Pillarisetty, H.C. George, Tom Watson, L. Lampert, T.S. Krähenmann, A.M.J. Zwerver, M. Veldhorst, G. Scappucci, L.M.K. Vandersypen, More Authors
DOI
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https://doi.org/10.1109/IEDM19573.2019.8993587
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Published Date

2019

Language

English

Reuse Rights

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Vandersypen Lab

Abstract

Perhaps the greatest challenge facing quantum computing hardware development is the lack of a high throughput electrical characterization infrastructure at the cryogenic temperatures required for qubit measurements. In this article, we discuss our efforts to develop such a line to guide 300mm spin qubit process development. This includes (i) working with our supply chain to create the required cryogenic high volume testing ecosystem, (ii) driving full wafer cryogenic testing for both transistor and quantum dot statistics, and (iii) utilizing this line to develop a quantum dot process resulting in key electrical data comparable to that from leading devices in literature, but with unprecedented yield and reproducibility.