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Qubits made by advanced semiconductor manufacturing

Journal Article (2022)
Author(s)

A. M.J. Zwerver (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)

T. Krähenmann (TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

S. V. Amitonov (Kavli institute of nanoscience Delft, TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre)

J. M. Boter (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)

G. Droulers (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)

M. Lodari (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

N. Samkharadze (TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)

G. Zheng (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)

G. Scappucci (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)

M. Veldhorst (Kavli institute of nanoscience Delft, TU Delft - QN/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre)

L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

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Research Group
QCD/Vandersypen Lab
DOI related publication
https://doi.org/10.1038/s41928-022-00727-9
More Info
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Publication Year
2022
Language
English
Research Group
QCD/Vandersypen Lab
Issue number
3
Volume number
5
Pages (from-to)
184-190
Downloads counter
541
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Institutional Repository
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Abstract

Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.