Quantum Transport Properties of Industrial Si 28 / Si O2 28
D. Sabbagh (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
L. Massa (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
S. V. Amitonov (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab)
J. M. Boter (TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
G. Droulers (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
H. G.J. Eenink (TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
M. Veldhorst (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)
L. M.K. Vandersypen (TU Delft - QCD/Vandersypen Lab, TU Delft - QN/Vandersypen Lab)
G. Scappucci (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)
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Abstract
We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits.