Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology
N. Thomas (Intel Corporation)
T. F. Watson (Intel Corporation)
M. Metz (Intel Corporation)
J. M. Boter (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Juan Pablo Dehollain Lorenzana (TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
G. Droulers (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)
G. Eenink (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - TU Delft Services)
R. Li (TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
L. Massa (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - TU Delft Services)
D. Sabbagh (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, TU Delft - TU Delft Services, Kavli institute of nanoscience Delft)
N. Samkharadze (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)
C. Volk (TU Delft - TU Delft Services, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
A. M. Zwerver (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
M. Veldhorst (TU Delft - QCD/Veldhorst Lab, TU Delft - TU Delft Services, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
G. Scappucci (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)
L. M.K. Vandersypen (Kavli institute of nanoscience Delft, TU Delft - QN/Vandersypen Lab, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
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Abstract
Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a
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Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.