Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures
R.M. Incandela (TU Delft - OLD QCD/Charbon Lab)
L Song (Tsinghua University, TU Delft - ImPhys/Quantitative Imaging)
H.A.R. Homulle (TU Delft - OLD QCD/Charbon Lab)
Fabio Sebastiano (TU Delft - (OLD)Applied Quantum Architectures)
E. Charbon-Iwasaki-Charbon (Intel Corporation, TU Delft - OLD QCD/Charbon Lab, TU Delft - (OLD)Applied Quantum Architectures, École Polytechnique Fédérale de Lausanne)
Andrei Vladimircscu (ISEP, University of California, TU Delft - OLD QCD/Charbon Lab)
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Abstract
The characterization of nanometer CMOS transistors of different aspect ratios at deep-cryogenic temperatures (4 K and 100 mK) is presented for two standard CMOS technologies (40 nm and 160 nm). A detailed understanding of the device physics at those temperatures was developed and captured in an augmented MOS11/PSP model. The accuracy of the proposed model is demonstrated by matching simulations and measurements for DC and time-domain at 4 K and, for the first time, at 100 mK.
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