Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction
Y. Zhang (TU Delft - Electronic Components, Technology and Materials)
L. Du (TU Delft - Electronic Components, Technology and Materials)
Olof Bäcke (Chalmers University of Technology)
Sebastian Kalbfleisch (MAX IV Laboratory)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
S Vollebregt (TU Delft - Electronic Components, Technology and Materials)
Magnus Hörnqvist Colliander (Chalmers University of Technology)
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Abstract
As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.
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