Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells
Luana Mazzarella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Alba Alcaniz-Moya (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Eliora Kawa (Student TU Delft)
Paul Procel (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Yifeng Zhao (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Can Han (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Guangtao Yang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical parameters as compared to the one featuring only MoOx and to the silicon heterojunction reference cell. Optical simulations and experimentally measured currents suggest that the additional PT is responsible of very limited parasitic absorption overcompensated by the thinner MoOx used (3.5 nm) and by the lower losses in the (i)a-Si:H layer underneath.