Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells
L. Mazzarella (TU Delft - Photovoltaic Materials and Devices)
A. Alcañiz Moya (TU Delft - Photovoltaic Materials and Devices)
Eliora Kawa (Student TU Delft)
P. Procel Moya (TU Delft - Photovoltaic Materials and Devices)
Yifeng Zhao (TU Delft - Photovoltaic Materials and Devices)
C. Han (TU Delft - Photovoltaic Materials and Devices)
Guangtao Yang (TU Delft - Photovoltaic Materials and Devices)
M Zeman (TU Delft - Electrical Sustainable Energy)
Olindo Isabella (TU Delft - Photovoltaic Materials and Devices)
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Abstract
Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical parameters as compared to the one featuring only MoOx and to the silicon heterojunction reference cell. Optical simulations and experimentally measured currents suggest that the additional PT is responsible of very limited parasitic absorption overcompensated by the thinner MoOx used (3.5 nm) and by the lower losses in the (i)a-Si:H layer underneath.