CMOS Drivers for RF-DACs

Abstract

This work describes a fully digital transmitter (DTX) for 5G mMIMO base stations that combines the strengths of high-speed digital CMOS with the high-power capabilities of a Monolithic Microwave Integrated Circuit (MMIC) high-voltage technology. This technology platform offers high integration and scalability for implementing Radio Frequency Digital-to-Analog Converters (RF-DACs). To facilitate the digital operation of the gate-segmented output power stage, a custom VT-shifted LDMOS technology has been utilized. The relatively high output capacitance of the LDMOS devices makes digital class-C operation the preferred class of operation to achieve high efficiency with good linearity metrics for the digital power amplifier (DPA). In this work, we analyze this operation, assuming a trapezoidal-shaped current profile, which allows investigation of the impact of the non-zero rise and fall times on the theoretical (normalized) output power and drain efficiency.
To drive the gate segments in this custom VT LDMOS technology with a gate-to-source voltage (VGS) swing of 2.2 V, a driver is proposed comprising: inverter chains, a level shifter, and a high-voltage output buffer. This driver is fully digital and can be implemented using thin-oxide bulk CMOS devices whose VDD is limited to 1.1 V. A model of the DTX comprising only the drivers and DPA at the circuit level is created in ADS to evaluate the output power, drain efficiency, and system efficiency. The DTX is simulated at 3.5 GHz full power and achieves an output power of 19.79 W/23.43 W, a drain efficiency of 67.28%/59.22%, and a system efficiency of 60.34%/54.48% with a non-empirical and empirical model of LDMOS, respectively. Rise and fall times of around 20% of the RF cycle (tr = tf = 0.2/fc) are found to be the most suitable in terms of power consumption and system efficiency.