DFT Scheme for Hard-to-Detect Faults in FinFET SRAMs

Conference Paper (2019)
Author(s)

Guilherme Cardoso Medeiros (TU Delft - Computer Engineering)

Mottaqiallah Taouil (TU Delft - Computer Engineering)

Moritz Fieback (TU Delft - Computer Engineering)

L. M. Bolzani Poehls (Pontifical Catholic University of Rio Grande do Sul)

Said Hamdioui (TU Delft - Quantum & Computer Engineering)

Research Group
Computer Engineering
Copyright
© 2019 G. Cardoso Medeiros, M. Taouil, M. Fieback, L. M. Bolzani Poehls, S. Hamdioui
DOI related publication
https://doi.org/10.1109/ETS.2019.8791517
More Info
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Publication Year
2019
Language
English
Copyright
© 2019 G. Cardoso Medeiros, M. Taouil, M. Fieback, L. M. Bolzani Poehls, S. Hamdioui
Research Group
Computer Engineering
Bibliographical Note
Accepted author manuscript@en
Volume number
2019-May
Pages (from-to)
1-2
ISBN (print)
978-1-7281-1174-2
ISBN (electronic)
978-1-7281-1173-5
Reuse Rights

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Abstract

Hard-to-detect faults such as weak and random faults in FinFET SRAMs represent an important challenge for manufacturing testing in scaled technologies, as they may lead to test escapes. This paper proposes a Design-for-Testability (DFT) scheme able to detect such faults by monitoring the bitline swing of FinFET memories. Using only five operations per cell, we are able to detect defects that cause deterministic, random, and weak faults. Compared to the state of the art, this leads to an improved detection capability at reduced area overhead.

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