Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

Conference Paper (2019)
Author(s)

J. van Staveren (TU Delft - OLD QCD/Charbon Lab)

Carmina Almudever (TU Delft - Computer Engineering)

G. Scappucci (TU Delft - QCD/Scappucci Lab)

M. Veldhorst (TU Delft - QCD/Veldhorst Lab)

M. Babaie (TU Delft - Electronics)

E. Charbon-Iwasaki-Charbon (Intel Corporation, École Polytechnique Fédérale de Lausanne, TU Delft - OLD QCD/Charbon Lab, TU Delft - (OLD)Applied Quantum Architectures)

F. Sebastiano (TU Delft - (OLD)Applied Quantum Architectures)

Research Group
Computer Engineering
DOI related publication
https://doi.org/10.1109/ESSCIRC.2019.8902861
More Info
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Publication Year
2019
Language
English
Research Group
Computer Engineering
Pages (from-to)
37-40
ISBN (electronic)
9781728115504

Abstract

This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.

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