Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS
J. Van Staveren (TU Delft - OLD QCD/Charbon Lab)
C. Garcia Almudever (TU Delft - Computer Engineering)
G. Scappucci (TU Delft - QCD/Scappucci Lab)
M. Veldhorst (TU Delft - QCD/Veldhorst Lab)
M. Babaie (TU Delft - Electronics)
E. Charbon (Intel Corporation, École Polytechnique Fédérale de Lausanne, TU Delft - OLD QCD/Charbon Lab, TU Delft - (OLD)Applied Quantum Architectures)
F. Sebastiano (TU Delft - (OLD)Applied Quantum Architectures)
More Info
expand_more
Abstract
This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.