- Overview of key results achieved in H2020 HighLite project helping to raise the EU PV industries' competitiveness
- High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology
- Millimeter-Wave On-Wafer TRL Calibration Employing 3-D EM Simulation-Based Characteristic Impedance Extraction
- Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
- Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
- A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device