A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion...

A Simple Model describing the kinetic of CVD Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism...

Local-Loading Effects for Pure-Boron-Layer Chemical-Vapor Deposition

The so-called local-loading effect is studied for pure boron (PureB) depositions from B2H6 in a chemical-vapor deposition (CVD) reactor. This effect occurs because the boron is not deposited on oxide and this increases the deposition rate (DR) of boron in open Si areas in the oxide. Experiments are performed for wide range of local-oxide ratio ...

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...

Local-Loading Effects for Pure-Boron-Layer Chemical-Vapor Deposition (abstract)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions

The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane (abstract)

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions (abstract)

On the uniformity of pure-boron-layer depositions

In this paper, the uniformity of PureB-layers deposited on photodiode surfaces of a segmented photodetector is investigated and discussed. Low-energy E-beam (LEEB) measurements have been carried out to study the uniformity and PureB-layer thickness variations over the anode surface area. It can be conclude that the PureB-layer is thinner in the...