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Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics

Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...

journal article 2023

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Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films

Hagendoorn, Y. (author), Pandraud, G. (author), Vollebregt, S. (author), Morana, B. (author), Sarro, Pasqualina M (author), Steeneken, P.G. (author)

Since the transfer process of graphene from a dedicated growth substrate to another substrate is prone to induce defects and contamination and can increase costs, there is a large interest in methods for growing graphene directly on silicon wafers. Here, we demonstrate the direct CVD growth of graphene on a SiO2 layer on a silicon wafer by...

journal article 2022

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Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...

journal article 2022

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Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

conference paper 2022

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Highly-conformal sputtered through-silicon vias with sharp superconducting transition

Alfaro Barrantes, J.A. (author), Mastrangeli, Massimo (author), Thoen, David (author), Visser, Sten (author), Bueno Lopez, J. (author), Baselmans, J.J.A. (author), Sarro, Pasqualina M (author)

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up...

journal article 2021

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Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

conference paper 2021

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Superconducting High-Aspect Ratio Through-Silicon Vias with DC-Sputtered Al for Quantum 3D integration

Alfaro Barrantes, J.A. (author), Mastrangeli, Massimo (author), Thoen, David (author), Visser, Sven (author), Bueno Lopez, J. (author), Baselmans, J.J.A. (author), Sarro, Pasqualina M (author)

This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall...

journal article 2020

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Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

Alfaro Barrantes, J.A. (author), Mastrangeli, Massimo (author), Thoen, David (author), Bueno Lopez, J. (author), Baselmans, J.J.A. (author), Sarro, Pasqualina M (author)

We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm...

conference paper 2020

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Metal and Polymeric Strain Gauges for Si-based, Monolithically Fabricated Organs-on-Chips

Quiros Solano, W.F. (author), Gaio, N. (author), Silvestri, C. (author), Pandraud, G. (author), Dekker, R. (author), Sarro, Pasqualina M (author)

Organ-on-chip (OOC) is becoming the alternative tool to conventional in vitro screening. Heart-on-chip devices including microstructures for mechanical and electrical stimulation have been demonstrated to be advantageous to study structural organization and maturation of heart cells. This paper presents the development of metal and polymeric...

journal article 2019

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Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

Prodanovic, V. (author), Chan, H.W. (author), van der Graaf, H. (author), Sarro, Pasqualina M (author)

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si _x N _y ) and atomic layer deposited alumina (Al<sub...

journal article 2018

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A novel method to transfer porous PDMS membranes for high throughput Organ-on-Chip and Lab-on-Chip assembly

Quiros Solano, W.F. (author), Gaio, N. (author), Silvestri, C. (author), Arik, Y.B. (author), Stassen, O.M.J.A. (author), van der Meer, A.D. (author), Bouten, C.V.C. (author), van den Berg, A. (author), Dekker, R. (author), Sarro, Pasqualina M (author)

We present a novel method to easily and reliably transfer highly porous, large area, thin microfabricated Polydimethylsiloxane (PDMS) porous membranes on Lab-on-Chip (LOC) and Organ-on-Chip (OOC) devices. The use of silicon as carrier substrate and a water-soluble sacrificial layer allows a simple and reproducible transfer of the membranes to...

conference paper 2018

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A multiwell plate Organ-on-Chip (OOC) device for in-vitro cell culture stimulation and monitoring

Gaio, N. (author), Waafi, A. (author), Vlaming, M.L.H. (author), Boschman, E. (author), Dijkstra, P. (author), Nacken, O. (author), Braam, S.R. (author), Boucsein, C. (author), Sarro, Pasqualina M (author), Dekker, R. (author)

This work presents the first multi-well plate that allows for simultaneous mechanical stimulation and electrical monitoring of multiple in-vitro cell cultures in parallel. Each well of the plate is equipped with an Organ-on-Chip (OOC) device consisting of a stretchable micro-electrode array (MEA). For the first time, a film assisted molding ...

conference paper 2018

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Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

Alfaro, J.A. (author), Sberna, P.M. (author), Silvestri, C. (author), Mastrangeli, Massimo (author), Ishihara, R. (author), Sarro, Pasqualina M (author)

A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter. The low electrical resistivity achieved without sintering, its...

conference paper 2018

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A highly miniturized single-chip MOEMS scanner for all-in-one imaging solution

Jovic, A. (author), Uto, T. (author), Hei, K. (author), Sancho, Juan (author), Sanchez, Nuria (author), Zinoviev, Kirill (author), Rubio, Jose L. (author), Margallo, Eduardo (author), Pandraud, G. (author), Sarro, Pasqualina M (author)

A highly miniaturized, single-chip, large scanning range MOEMS scanner is demonstrated. This intrinsically-aligned, monolithically integrated device uses small angular displacement to provide a linear scanning range of 2000 μm in the lateral and 1000 μm in the vertical direction, at a working distance of 2 cm, with an average operating power...

conference paper 2018

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A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

Vollebregt, S. (author), Alfano, B. (author), Ricciardella, F. (author), Giesbers, A.J.M. (author), Hagendoorn, Y. (author), van Zeijl, H.W. (author), Polichetti, T (author), Sarro, Pasqualina M (author)

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement...

conference paper 2016

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Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

Thomas, S. (author), Jovic, A. (author), Morana, B. (author), Buja, F. (author), Gkouzou, A. (author), Pandraud, G. (author), Sarro, Pasqualina M (author)

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement...

journal article 2016

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Optimization of silicon-rich silicon nitride films for electron multiplication in timed photon counters

Prodanovic, V. (author), Chan, H.W. (author), Smedley, J. (author), Theulings, A. (author), Tao, S. (author), Van der Graaf, H. (author), Sarro, P.M. (author)

The excellent overall properties of silicon nitride, particularly its mechanical strength and resistance to many etchants, make it a widely used material for microsensors and microactuators. In this paper silicon-rich silicon nitride (SRN) films were investigated as material for ultra-thin transmission dynodes in electron multiplication. These...

journal article 2015

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Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

Fiorentino, G. (author), Syed, W. (author), Adam, A. (author), Neto, A. (author), Sarro, P.M. (author)

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a...

journal article 2014

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Enhancement of AlN Slender Piezoelectric Cantilevers Actuation by PECVD Silicon Nitride Coating

Tran, A.T. (author), Pandraud, G. (author), Schellevis, H. (author), Sarro, P.M. (author)

Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger...

journal article 2012

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A comparison between PECVD and ALD for the fabrication of slot waveguide based sensors

Pandraud, G. (author), Purniawan, A. (author), Margallo-Balbás, E. (author), Sarro, P.M. (author)

We fabricated horizontal slot waveguides using two low temperature deposition techniques ensuring the full compatibility of the processes with CMOS technology. Slots width as thin as 45 nm with smooth slot surfaces can easily be fabricated with simple photolithographic steps. Fundamental TM-like slot mode in which the E-field is greatly enhanced...

conference paper 2012