We show cathodoluminescence-based time-resolved electron beam spectroscopy in order to directly probe the spontaneous emission decay rate that is modified by the local density of states in a nanoscale environment. In contrast to dedicated laser-triggered electron-microscopy setups, we use commercial hardware in a standard SEM, which allows us to easily switch from pulsed to continuous operation of the SEM. Electron pulses of 80–90 ps duration are generated by conjugate blanking of a high-brightness electron beam, which allows probing emitters within a large range of decay rates. Moreover, we simultaneously attain a resolution better than λ/10, which ensures details at deep-subwavelength scales can be retrieved. As a proof-of-principle, we employ the pulsed electron beam to spatially measure excited-state lifetime modifications in a phosphor material across the edge of an aluminum half-plane, coated on top of the phosphor. The measured emission dynamics can be directly related to the structure of the sample by recording photon arrival histograms together with the secondary-electron signal. Our results show that time-resolved electron cathodoluminescence spectroscopy is a powerful tool of choice for nanophotonics, within reach of a large audience.@en

Electrostatic beam blankers are an alternative to photo-emission sources for generating pulsed electron beams for Time-resolved Cathodoluminescence and Ultrafast Electron Microscopy. While the properties of beam blankers have been extensively investigated in the past for applications in lithography, characteristics such as the influence of blanking on imaging resolution have not been fully addressed. We derive general analytical expressions for the spot displacement and loss in resolution induced by deflecting the electron beam in a blanker. In particular, we analyze the sensitivity of both measures to how precise the conjugate focus is aligned in between the deflector plates. We then work out the specific case of a beam blanker driven by a linear voltage ramp as was used in recent studies by others and by us. The result shows that the spot displacement and focus blur can be reduced to the same order as the electron beam probe size, even when using a beam blanker of millimeter or larger scale dimensions. An interesting result is that, by the right choice of the focus position in the deflector, either the spot displacement from the stationary position can be minimized, or the blur can be made zero but not both at the same time. Our results can be used both to characterize existing beam blanker setups and to design novel blankers. This can further develop the field of time-resolved electron microscopy by making it easier to generate pulses with a typical duration of tens of picoseconds in a regular scanning electron microscope at high spatial resolution.@en

Here, we demonstrate ultrafast scanning electron microscopy (SEM) for making ultrafast movies of mechanical oscillators at resonance with nanoscale spatiotemporal resolution. Locking the laser excitation pulse sequence to the electron probe pulses allows for video framerates over 50 MHz, well above the detector bandwidth, while maintaining the electron beam resolution and depth of focus. The pulsed laser excitation is tuned to the oscillator resonance with a pulse frequency modulation scheme. We use an atomic force microscope cantilever as a model resonator, for which we show ultrafast real-space imaging of the first and even the 2 MHz second harmonic oscillation as well as verification of power and frequency response via the ultrafast movies series. We detect oscillation amplitudes as small as 20 nm and as large as 9 μm. Our implementation of ultrafast SEM for visualizing nanoscale oscillatory dynamics adds temporal resolution to the domain of SEM, providing new avenues for the characterization and development of devices based on micro- and nanoscale resonant motion. @en

Ultrafast scanning electron microscopy images carrier dynamics and carrier induced surface voltages using a laser pump electron probe scheme, potentially surpassing all-optical techniques in probe resolution and surface sensitivity. Current implementations have left a four order of magnitude gap between optical pump and electron probe resolution, which particularly hampers spatial resolution in the investigation of carrier induced local surface photovoltages. Here, we present a system capable of focusing the laser using an inverted optical microscope built into an ultrafast scanning electron microscopy setup to enable high numerical aperture pulsed optical excitation in conjunction with ultrafast electron beam probing. We demonstrate an order of magnitude improvement in optical pump resolution, bringing this to sub-micrometer length scales. We further show that temporal laser pump resolution can be maintained inside the scanning electron microscope by pre-compensating dispersion induced by the components required to bring the beam into the vacuum chamber and to a tight focus. We illustrate our approach using molybdenum disulfide, a two-dimensional transition metal dichalcogenide, where we measure ultrafast carrier relaxation rates and induced negative surface potentials between different flakes selected with the scanning electron microscope as well as on defined positions within a single flake. @en

Scanning electron microscopes (SEMs) can capture detail on the single nanometer length scale through the interaction of a tightly focused electron beam with a sample, but this impressive spatial resolution is not matched with a capability to resolve dynamic processes on the ultrafast time scale. A variety of processes occur at nanosecond and faster time scale, and at spatial scales out of reach of conventional light optical microscopes, for example in nanoscale solid state devices and nanomechanical resonators. An imaging tool combining high spatial and temporal resolution is therefore required. In recent years, some research groups have worked on a technique to add ultrafast imaging to the capabilities of a SEM, building on concepts developed for transmission electron microscopy. In so-called ultrafast scanning electron microscopy (USEM), the combination of a pulsed laser and a pulsed electron beam enables the formation of movies capturing dynamics much faster than possible with a conventional SEM. Dynamics are initiated with femtosecond laser excitation of the sample and probed with electron beam pulses arriving with tightly controlled delay. The temporal resolution of this pump-probe scheme is determined by the laser and electron pulse duration. Secondary electrons, emitted from the top few nanometer of the sample, are collected and used to construct ultrafast movies. The aim of this thesis is to further develop the technique by making multiple improvements in our implementation, gaining additional insight into the contrast mechanism of USEM, and exploring new applications. @en

Visualizing charge carrier flow over interfaces or near surfaces meets great challenges concerning resolution and vastly different time scales of bulk and surface dynamics. Ultrafast or four-dimensional scanning electron microscopy (USEM) using a laser pump electron probe scheme circumvents the optical diffraction limit, but disentangling surface-mediated trapping and ultrafast carrier dynamics in a single measurement scheme has not yet been demonstrated. Here, we present lock-in USEM, which simultaneously visualizes fast bulk recombination and slow trapping. As a proof of concept, we show that the surface termination on GaAs, i.e., Ga or As, profoundly influences ultrafast movies. We demonstrate the differences can be attributed to trapping-induced surface voltages of approximately 100-200 mV, which is further supported by secondary electron particle tracing calculations. The simultaneous visualization of both competing processes opens new perspectives for studying carrier transport in layered, nanostructured, and two-dimensional semiconductors, where carrier trapping constitutes a major bottleneck for device efficiency.@en

Nanomaterials can be identified in high-resolution electron microscopy images using spectrally-selective cathodoluminescence. Capabilities for multiplex detection can however be limited, e.g., due to spectral overlap or availability of filters. Also, the available photon flux may be limited due to degradation under electron irradiation. Here, we demonstrate single-pass cathodoluminescence-lifetime based discrimination of different nanoparticles, using a pulsed electron beam. We also show that cathodoluminescence lifetime is a robust parameter even when the nanoparticle cathodoluminescence intensity decays over an order of magnitude. We create lifetime maps, where the lifetime of the cathodoluminescence emission is correlated with the emission intensity and secondary-electron images. The consistency of lifetime-based discrimination is verified by also correlating the emission wavelength and the lifetime of nanoparticles. Our results show how cathodoluminescence lifetime provides an additional channel of information in electron microscopy.@en