The microstructure, thickness, porosity, and shear performance of the silver (Ag) sintering layers under different sintering pressures were investigated. Experimental results demonstrated that the thickness and the porosity of the sintering layer decreased when the sintering pressure varied from 5 MPa to 30 MPa. This densification phenomenon facilitated the enhancement of the Ag sintering layers. The shear strength was improved significantly from 44.19 MPa to 69.41 MPa when the sintering pressure increased from 5 MPa to 10 MPa. When the sintering pressure ranged from 10 MPa to 30 MPa, the shear strength presented a slow increase from 69.41 MPa to 73.38 MPa. According to the results of the failure analysis, fracture mode transformation was considered as the basic reason for this phenomenon. The increasing sintering pressure promoted the bonding of the nano-Ag particles during the sintering process. Consequently, the fracture of the sintered-Ag layer transformed from brittle fracture to ductile fracture because of the increasing sintering pressure. The delamination area between Cu and Ni layers coated on the bottom Mo plate was clearly enlarged with the increasing sintering pressure. The delamination between Cu and Ni layers coated on the bottom Mo plate turned to be the main failure mode when the sintering pressure was higher than 10 MPa.@en

Purpose: Crack and stress distribution on dies are key issues for the pressure-assisted sintering bonding of power modules. The purpose of this research is to build a relationship among stress distributions, sintering sequences and sintering pressures during the sintering processes. Design/methodology/approach: Three sintering sequences, S(a), S(b) and S(c), have been designed for the double-side assembly of power module in this paper. Experiments and finite element method (FEM) analysis are conducted to investigate the crack and stress distribution. Findings: The sintering sequence had significant effects on the crack generation in the chips during the sintering process under 30-MPa pressure. The simulation results revealed that the module sintered by S(a) showed lower chip stress than those by the other two sintering sequences under 30 MPa. In contrast, the chip stress is the highest when the sintering sequence follows S(b). The simulation results explained the crack generation and prolongation in the experiments. S(a) was recommended as the best sintering sequence because of the lowest chip stress and highest yield rate. Originality/value: This study investigated the stress distributions of the double-side sintered power modules under different sintering pressures. Based on the results of experiments and FEM analysis, the best sintering sequence design is provided under various sintering pressures.@en

Modern power electronics has the increased demands in current density and high-temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high-temperature reliability. This paper investigated the sintering properties of nanosilver film in double-side sintered power packages. X-ray diffraction results revealed that the size of nanosilver particles increased after pressure-free sintering. Compared with the pressure-free sintered nanosilver particles, the 5-MPa sintered particles showed a higher density. When increasing sintering pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on the bottom molybdenum substrate when sintering at 30 MPa.@en

High reliable packaging materials are needed for electronics when they work at harsh environments. Among which, the nanosilver material has been widely studied and applied in power electronics due to its low processing temperature and high reliability. This paper investigates the bonding properties of nanosilver sintered hermetic cavity. There are two kinds of lids used in this study, including copper lid and silicon lid. The X-ray and C-Mode Scanning Acoustic Microscopy (C-SAM) results revealed that delamination tended to happen in Cu lid sintered cavity as the recovery of deformed Cu lid was hindered by sintered dense Ag layer. However, no delamination or cracks were found in Si lid sintered cavity. Finite element analysis (FEA) method was used to investigate the effects of lid materials on the stress distribution of lid. The results indicated that the Cu lid sintered cavity showed a much higher stress than the Si lid sintered cavity under the sintering parameters of 250 °C and 10 MPa. There is no obvious change in the stress distribution areas on Cu lid with the increasing of pressures from 5 to 30 MPa. However, the distribution area of stress on Si lid expanded obviously only when the sintering pressure increased to 30 MPa. With the increase of sintering pressures from 5 to 30 MPa, the maximum stresses on Cu lid are almost the same, while increasing trend was found on Si lid.@en

The nanoindentation test was conducted in this paper to investigate the indentation hardness, plasticity and initial creep properties of pressure sintered nanosilver joint at various test temperatures. The effects of strain rate on the indentation hardness were first investigated. Then yield stress of nanosilver sintered joint was studied in various pressures sintered joints and the corresponding plastic stress-strain constitutive equations were gained. The maximum indentation depth of nanosilver sintered joint was obviously affected by the test temperature and sintering pressure. The indentation hardness of nanosilver sintered joint decreased with increasing test temperature from 140 to 200°C, which can be attributed to the increased amount of thermal vacancies at high temperatures. However, the indentation modulus exhibited decrease trend as the temperature increased. It is suggested that the distance between adjacent atoms was enlarged at elevated temperatures and furtherly resulted in the decrease of indentation modulus. In addition, the increased sintering pressure from 5 to 30 MPa improved the indentation hardness and modulus of sintered joint. The initial creep was observed in nanosilver sintered joint at temperatures ranged from 140 to 200°C. The increase of sintering pressure improved the resistance to creep of nanosilver sintered joint.@en