PS
P Sutta
21 records found
1
Oxidation-Induced Structure Transformation
Thin-Film Synthesis and Interface Investigations of Barium Disilicide toward Potential Photovoltaic Applications
Barium disilicide (BaSi2) has been regarded as a promising absorber material for high-efficiency thin-film solar cells. However, it has confronted issues related to material synthesis and quality control. Here, we fabricate BaSi2 thin films via an industrially applicable sputteri
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This contribution investigates the effect of seeding the growth of thin film microcrystalline silicon (µc-Si¿:¿H) deposited by radio frequency plasma-enhanced chemical vapor deposition on the material properties of µc-Si¿:¿H film and the device performance of p-i-n and n-i-p µc-S
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The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated
silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane
diluted with hydrogen was under study. The series of thin films deposite
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In this work we report a simple approach by which we are able to probe crystallinity evolution in thin film microcrystalline silicon (¿c-Si:H) using depth-profile Raman measurement. Crystalline volume fraction f, is used as a measure of crystallinity indicator and varies with var
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A systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2
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Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase cry
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The introduction of aluminium doped zinc oxide (ZnO:Al) as a back reflector is an important part of the light-trapping techniques in present thin-film silicon solar cells. However, the application of the sputtered ZnO:Al at the back contact often results in an S-shaped J¿V charac
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The determination of the dominant crystal orientation is of great importance in gaining insight into the growth mechanisms of hydrogenated microcrystalline silicon (¿c-Si:H). However, for this purpose most techniques are time-consuming, expensive and destructive. In this contribu
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X-ray diffraction (XRD) analysis of thin silicon films was carried out using both the symmetric Bragg-Brentano and asymmetric thin-film attachment geometries. The asymmetric configuration allows quantitative phase analysis of the films and reveals that amorphous silicon films dep
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A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppress light-induced degradation
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