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M. Tohidian
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8 records found
1
Journal article
(2018)
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Pedram Payandehnia, Hamidreza Maghami, Hossein Mirzaie, Manjunath Kareppagoudr, Siladitya Dey, Massoud Tohidian, Gabor C. Temes
A novel switched-capacitor low-pass filter architecture is presented. In the proposed scheme, a feedback path is added to a charge-rotating real-pole filter to implement complex poles. The selectivity is enhanced, and the in-band loss is reduced compared with the real-pole filter. The output thermal noise level and the tuning range are both close to those of the real-pole filter. These features make the filter suitable for high speed, low noise, and low power applications. A fourth-order filter prototype was implemented in a 180-nm CMOS technology. The measured in-band loss is reduced by 3.3 dB compared with that of a real-pole filter. The sampling rate of the filter is programmable from 65 to 300 MS/s with a constant dc gain. The 3-dB cut-off frequency of the filter can be tuned from 490 to 13.3 MHz with over 100-dB maximum stop-band rejection. The measured in-band third-order output intercept point is 28.7 dBm, and the averaged spot noise is 6.54 nV/ surd Hz. The filter consumes 4.3 mW from a 1.8 V supply.
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A novel switched-capacitor low-pass filter architecture is presented. In the proposed scheme, a feedback path is added to a charge-rotating real-pole filter to implement complex poles. The selectivity is enhanced, and the in-band loss is reduced compared with the real-pole filter. The output thermal noise level and the tuning range are both close to those of the real-pole filter. These features make the filter suitable for high speed, low noise, and low power applications. A fourth-order filter prototype was implemented in a 180-nm CMOS technology. The measured in-band loss is reduced by 3.3 dB compared with that of a real-pole filter. The sampling rate of the filter is programmable from 65 to 300 MS/s with a constant dc gain. The 3-dB cut-off frequency of the filter can be tuned from 490 to 13.3 MHz with over 100-dB maximum stop-band rejection. The measured in-band third-order output intercept point is 28.7 dBm, and the averaged spot noise is 6.54 nV/ surd Hz. The filter consumes 4.3 mW from a 1.8 V supply.
Journal article
(2017)
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Zahra Koladouz Esfahani, Massoud Tohidian, Henk Van Zeijl, Mohammadreza Kolahdouz, Guoqi Zhang
Given the performance decay of high-power light-emitting diode (LED) chips over time and package condition changes, having a reliable output light for sensitive applications is a point of concern. In this study, a light feedback control circuit, including blue-selective photodiodes, for blue/ultraviolet (UV) LED, has been designed and implemented using a low-cost seven-mask BiCMOS process. The feedback circuit was monolithically integrated in a package with four high-power blue LED chips. For sensing the intensity of exact colored blue/UV light in the package, selective photodiodes at 480-nm wavelength were implemented. An opamp-based feedback circuit combined with a high-power transistor controls the output light based on real-time sensor data. The whole system is a low-cost integrated package that guarantees a stable and reliable output light under different working conditions. Output light can be also controlled linearly by a reference input voltage.
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Given the performance decay of high-power light-emitting diode (LED) chips over time and package condition changes, having a reliable output light for sensitive applications is a point of concern. In this study, a light feedback control circuit, including blue-selective photodiodes, for blue/ultraviolet (UV) LED, has been designed and implemented using a low-cost seven-mask BiCMOS process. The feedback circuit was monolithically integrated in a package with four high-power blue LED chips. For sensing the intensity of exact colored blue/UV light in the package, selective photodiodes at 480-nm wavelength were implemented. An opamp-based feedback circuit combined with a high-power transistor controls the output light based on real-time sensor data. The whole system is a low-cost integrated package that guarantees a stable and reliable output light under different working conditions. Output light can be also controlled linearly by a reference input voltage.
Journal article
(2017)
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Feng-Wei Kuo, Sandro Binsfeld Ferreira, Robert Bogdan Staszewski, Huan-Neng Ron Chen, Lan-Chou Cho, Chewn-Pu Jou, Fu-Lung Hsueh, Iman Madadi, Massoud Tohidian, Mina Shahmohammadi, Masoud Babaie
We present an ultra-low-power Bluetooth low-energy (BLE) transceiver (TRX) for the Internet of Things (IoT) optimized for digital 28-nm CMOS. A transmitter (TX) employs an all-digital phase-locked loop (ADPLL) with a switched current-source digitally controlled oscillator (DCO) featuring low frequency pushing, and class-E/F2 digital power amplifier (PA), featuring high efficiency. Low 1/ f DCO noise allows the ADPLL to shut down after acquiring lock. The receiver operates in discrete time at high sampling rate (10 Gsamples/s) with intermediate frequency placed beyond 1/ f noise corner of MOS devices. New multistage multirate charge-sharing bandpass filters are adapted to achieve high out-of-band linearity, low noise, and low power consumption. An integrated on-chip matching network serves to both PA and low-noise transconductance amplifier, thus allowing a 1-pin direct antenna connection with no external band-selection filters. The TRX consumes 2.75 mW on the RX side and 3.7 mW on the TX side when delivering 0 dBm in BLE.
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We present an ultra-low-power Bluetooth low-energy (BLE) transceiver (TRX) for the Internet of Things (IoT) optimized for digital 28-nm CMOS. A transmitter (TX) employs an all-digital phase-locked loop (ADPLL) with a switched current-source digitally controlled oscillator (DCO) featuring low frequency pushing, and class-E/F2 digital power amplifier (PA), featuring high efficiency. Low 1/ f DCO noise allows the ADPLL to shut down after acquiring lock. The receiver operates in discrete time at high sampling rate (10 Gsamples/s) with intermediate frequency placed beyond 1/ f noise corner of MOS devices. New multistage multirate charge-sharing bandpass filters are adapted to achieve high out-of-band linearity, low noise, and low power consumption. An integrated on-chip matching network serves to both PA and low-noise transconductance amplifier, thus allowing a 1-pin direct antenna connection with no external band-selection filters. The TRX consumes 2.75 mW on the RX side and 3.7 mW on the TX side when delivering 0 dBm in BLE.
The zero/low intermediate frequency (IF) receiver (RX) architecture has enabled full CMOS integration. As the technology scales and wireless standards become ever more challenging, the issues related to time-varying dc offsets, the second-order nonlinearity, and flicker noise become more critical. In this paper, we propose a new architecture of a superheterodyne RX that attempts to avoid such issues. By exploiting discrete-time (DT) operation and using only switches, capacitors, and inverter-based gm-stages as building blocks, the architecture becomes amenable to further scaling. Full integration is achieved by employing a cascade of four complex-valued passive switched-cap-based bandpass filters sampled at 4× of the local oscillator rate that perform IF image rejection. Channel selection is achieved through an equivalent of the seventh-order filtering. A new twofold noise-canceling low-noise transconductance amplifier is proposed. Frequency domain analysis of the RX is presented by the proposed DT model. The RX is wideband and covers 0.4-2.9 GHz with a noise figure of 2.9-4 dB. It is implemented in 65-nm CMOS and consumes 48-79 mW.
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The zero/low intermediate frequency (IF) receiver (RX) architecture has enabled full CMOS integration. As the technology scales and wireless standards become ever more challenging, the issues related to time-varying dc offsets, the second-order nonlinearity, and flicker noise become more critical. In this paper, we propose a new architecture of a superheterodyne RX that attempts to avoid such issues. By exploiting discrete-time (DT) operation and using only switches, capacitors, and inverter-based gm-stages as building blocks, the architecture becomes amenable to further scaling. Full integration is achieved by employing a cascade of four complex-valued passive switched-cap-based bandpass filters sampled at 4× of the local oscillator rate that perform IF image rejection. Channel selection is achieved through an equivalent of the seventh-order filtering. A new twofold noise-canceling low-noise transconductance amplifier is proposed. Frequency domain analysis of the RX is presented by the proposed DT model. The RX is wideband and covers 0.4-2.9 GHz with a noise figure of 2.9-4 dB. It is implemented in 65-nm CMOS and consumes 48-79 mW.
Conference paper
(2016)
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F. W. Kuo, Sandro Binsfeld Ferreira, R. B. Staszewski, M. Babaie, R. Chen, L. C. Cho, C. P. Jou, F. L. Hsueh, G. Huang, I. Madadi, M. Tohidian
We present a new ultra-low-power (ULP) transceiver for Internet-of-Things (IoT) optimized for 28-nm CMOS. The receiver (RX) employs a high-rate (up to 10 GS/s) discrete-time (DT) architecture with intermediate frequency (IF) placed beyond the 1/f noise corner of MOS devices. New multistage multi-rate charge-sharing bandpass filters are adapted to achieve high out-of-band linearity, low noise and low power consumption. A transmitter (TX) employs an all-digital PLL (ADPLL) with switched-current-source digitally controlled oscillator (DCO) and switching PA. An integrated on-chip matching network serves both PA and LNTA, thus allowing a 1-pin direct antenna connection with no external antenna filters. The transceiver consumes 2.75mW in RX and 3.6mW in TX when delivering 0 dBm in Bluetooth LE.
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We present a new ultra-low-power (ULP) transceiver for Internet-of-Things (IoT) optimized for 28-nm CMOS. The receiver (RX) employs a high-rate (up to 10 GS/s) discrete-time (DT) architecture with intermediate frequency (IF) placed beyond the 1/f noise corner of MOS devices. New multistage multi-rate charge-sharing bandpass filters are adapted to achieve high out-of-band linearity, low noise and low power consumption. A transmitter (TX) employs an all-digital PLL (ADPLL) with switched-current-source digitally controlled oscillator (DCO) and switching PA. An integrated on-chip matching network serves both PA and LNTA, thus allowing a 1-pin direct antenna connection with no external antenna filters. The transceiver consumes 2.75mW in RX and 3.6mW in TX when delivering 0 dBm in Bluetooth LE.
In this paper, we exploit an idea of coupling multiple oscillators to reduce phase noise (PN) to beyond the limit of what has been practically achievable so far in a bulk CMOS technology. We then apply it to demonstrate for the first time an RF oscillator that meets the most stringent PN requirements of cellular basestation receivers while abiding by the process technology reliability rules. The oscillator is realized in digital 65-nm CMOS as a dualcore LC-tank oscillator based on a high-swing class-C topology. It is tunable within 4.07-4.91 GHz, while drawing 39-59 mA from a 2.15 V power supply. The measured PN is -146.7 dBc/Hz and -163.1 dBc/Hz at 3 MHz and 20 MHz offset, respectively, from a 4.07 GHz carrier, which makes it the lowest reported normalized PN of an integrated CMOS oscillator. Straightforward expressions for PN and interconnect resistance between the cores are derived and verified against circuit simulations and measurements. Analysis and simulations show that the interconnect resistance is not critical even with a 1% mismatch between the cores. This approach can be extended to a higher number of cores and achieve an arbitrary reduction in PN at the cost of the power and area.
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In this paper, we exploit an idea of coupling multiple oscillators to reduce phase noise (PN) to beyond the limit of what has been practically achievable so far in a bulk CMOS technology. We then apply it to demonstrate for the first time an RF oscillator that meets the most stringent PN requirements of cellular basestation receivers while abiding by the process technology reliability rules. The oscillator is realized in digital 65-nm CMOS as a dualcore LC-tank oscillator based on a high-swing class-C topology. It is tunable within 4.07-4.91 GHz, while drawing 39-59 mA from a 2.15 V power supply. The measured PN is -146.7 dBc/Hz and -163.1 dBc/Hz at 3 MHz and 20 MHz offset, respectively, from a 4.07 GHz carrier, which makes it the lowest reported normalized PN of an integrated CMOS oscillator. Straightforward expressions for PN and interconnect resistance between the cores are derived and verified against circuit simulations and measurements. Analysis and simulations show that the interconnect resistance is not critical even with a 1% mismatch between the cores. This approach can be extended to a higher number of cores and achieve an arbitrary reduction in PN at the cost of the power and area.
Journal article
(2016)
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I Madadi, M Tohidian, Koen Cornelissens, Patrick Vandenameele, RB Staszewski
In this paper, we propose and demonstrate the first fully integrated surface acoustic wave (SAW)-less superheterodyne receiver (RX) for 4G cellular applications. The RX operates in discrete-time domain and introduces various innovations to simultaneously improve noise and linearity performance while reducing power consumption: a highly linear wideband noise-canceling low-noise transconductance amplifier (LNTA), a blocker-resilient octal charge-sharing bandpass filter, and a cascaded harmonic rejection circuitry. The RX is implemented in 28-nm CMOS and it does not require any calibration. It features NF of 2.1-2.6 dB, an immeasurably high input second intercept point for closely-spaced or modulated interferers, and input third intercept point of 8-14 dBm, while drawing only 22-40 mW in various operating modes.
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In this paper, we propose and demonstrate the first fully integrated surface acoustic wave (SAW)-less superheterodyne receiver (RX) for 4G cellular applications. The RX operates in discrete-time domain and introduces various innovations to simultaneously improve noise and linearity performance while reducing power consumption: a highly linear wideband noise-canceling low-noise transconductance amplifier (LNTA), a blocker-resilient octal charge-sharing bandpass filter, and a cascaded harmonic rejection circuitry. The RX is implemented in 28-nm CMOS and it does not require any calibration. It features NF of 2.1-2.6 dB, an immeasurably high input second intercept point for closely-spaced or modulated interferers, and input third intercept point of 8-14 dBm, while drawing only 22-40 mW in various operating modes.
In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various LC-tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each LC -tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator's center frequency can be fractionally separated by ~28% but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insignificantly small (-80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally verified in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator.
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In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various LC-tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each LC -tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator's center frequency can be fractionally separated by ~28% but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insignificantly small (-80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally verified in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator.