As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Work-Arounds for small devices, including prepulsing with an off-resonant microwave burst to bring a device to a steady state, wait times prior to measurement, and qubit-specific calibrations all bode ill for device scalability. Here, we make substantial progress in understanding and overcoming this effect. We report a surprising nonmonotonic relation between mixing chamber temperature and spin Larmor frequency which is consistent with observed frequency shifts induced by microwave and baseband control signals. We find that purposefully operating the device at 200 mK greatly suppresses the adverse heating effect while not compromising qubit coherence or single-qubit fidelity benchmarks. Furthermore, systematic non-Markovian crosstalk is greatly reduced. Our results provide a straightforward means of improving the quality of multispin control while simplifying calibration procedures for future spin-based quantum processors.

We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of (1.8 ± 0.5) × 10 5 cm2/V s and a low mean percolation density of (9 ± 1) × 10 10 cm-2. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of (8.1 ± 0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5 ± 0.6) × 10 4 cm2/V s and (40 ± 3) μ eV, respectively, and a small mean Dingle ratio of (2.3 ± 0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.