P. Dey
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16 records found
1
In this work, the TMD material was prepared using both bottom-up and top-down approaches. For the transfer of the flakes, two different dry transfer techniques were explored involving the use of either only a PDMS stamp or a PC/PDMS stamps. The Device fabrication itself was performed in Kavli Nanolabs, which provided the cleanroom environment for the process. The whole process of the device fabrication process included several steps including substrate cleaning using fuming nitric acid, organic solvent cleaning, resist coating, photolithography or electron-beam lithography, metal deposition, lift-off, and oxygen plasma cleaning. Three main electrode geometries were fabricated in this work, including two-terminal, four-terminal, and interdigitated structures. The electrical contacts consisted of Ti/Au stacks with thicknesses of 5 nm and 30 nm, respectively, deposited by electron-beam evaporation.
Electrical characterization was conducted at room temperature (∼ 300 K) under vacuum conditions, and these measurements included mainly current-voltage (I-V) and gate-sweep measurements, and four probe measurements (V-I). Across the measured devices, the absolute drain currents ranged from approximately 10−12 A to 10−9 A. For the prepatterned interdigitated device incorporating a 2D MoSe2 flake, the total resistance was calculated to be 2.33 × 1011 Ωand the same device architecture with a nanoscroll device exhibited a resistance of 6.91 × 1011 Ω. For the pre-patterned MoSe2 device, the resistance was measured to be 1.62 GΩ, and it displayed p-type semiconducting behaviour; while the pre-patterned WS2 device exhibited a significantly higher resistance of 1.5 × 1012 Ω and it showed n-type behaviour. The subthreshold swing (SS) and field-effect mobility were also extracted for both these two-electrode prepatterned devices. For the MoSe2 device, the SS was calculated to be 6877.7 mV/dec, with a field-effect mobility of 0.0067 cm2 V−1 s−1. For the WS2 device, the SS was 488.1 mV/dec and the extracted field-effect mobility was 4.1 × 10−4 cm2 V−1 s−1. Finally, resistance measurements were performed on a post-patterned WS2 device, yielding a resistance of 1.65 × 109 Ω. This device exhibited ambipolar semiconducting behaviour, with n-type conduction being dominant. The subthreshold swing for electron transport was calculated to be 10726 mV/dec, and the corresponding field-effect mobility was 0.04 cm2 V−1 s−1. Overall, the results indicated a lower resistance for the post-patterned WS2 device compared to its pre-patterned counterpart, but the results are not comparable since the flake geometry, thickness and quality varied between the pre-patterned and post-patterned devices. However, all gate-sweep measurements demonstrated limited electrostatic modulation, characterized by weak on-off ratios and large subthreshold swing values, which is consistent with suppressed carrier injection. The results indicate that electrical transport in the fabricated devices is dominated by several extrinsic factors, including contact resistance, ambient conditions, interfacial contamination, and measurement constraints, rather than intrinsic TMD channel properties. These require future work and optimization.
Overall this work highlights the challenges associated with fabricating and measuring electrical properties of 2D semiconductor devices and provides practical guidance for improving fabrication workflows, interface engineering, and measurement strategies for future exploration of 1-D TMD-based
electronics.
...
In this work, the TMD material was prepared using both bottom-up and top-down approaches. For the transfer of the flakes, two different dry transfer techniques were explored involving the use of either only a PDMS stamp or a PC/PDMS stamps. The Device fabrication itself was performed in Kavli Nanolabs, which provided the cleanroom environment for the process. The whole process of the device fabrication process included several steps including substrate cleaning using fuming nitric acid, organic solvent cleaning, resist coating, photolithography or electron-beam lithography, metal deposition, lift-off, and oxygen plasma cleaning. Three main electrode geometries were fabricated in this work, including two-terminal, four-terminal, and interdigitated structures. The electrical contacts consisted of Ti/Au stacks with thicknesses of 5 nm and 30 nm, respectively, deposited by electron-beam evaporation.
Electrical characterization was conducted at room temperature (∼ 300 K) under vacuum conditions, and these measurements included mainly current-voltage (I-V) and gate-sweep measurements, and four probe measurements (V-I). Across the measured devices, the absolute drain currents ranged from approximately 10−12 A to 10−9 A. For the prepatterned interdigitated device incorporating a 2D MoSe2 flake, the total resistance was calculated to be 2.33 × 1011 Ωand the same device architecture with a nanoscroll device exhibited a resistance of 6.91 × 1011 Ω. For the pre-patterned MoSe2 device, the resistance was measured to be 1.62 GΩ, and it displayed p-type semiconducting behaviour; while the pre-patterned WS2 device exhibited a significantly higher resistance of 1.5 × 1012 Ω and it showed n-type behaviour. The subthreshold swing (SS) and field-effect mobility were also extracted for both these two-electrode prepatterned devices. For the MoSe2 device, the SS was calculated to be 6877.7 mV/dec, with a field-effect mobility of 0.0067 cm2 V−1 s−1. For the WS2 device, the SS was 488.1 mV/dec and the extracted field-effect mobility was 4.1 × 10−4 cm2 V−1 s−1. Finally, resistance measurements were performed on a post-patterned WS2 device, yielding a resistance of 1.65 × 109 Ω. This device exhibited ambipolar semiconducting behaviour, with n-type conduction being dominant. The subthreshold swing for electron transport was calculated to be 10726 mV/dec, and the corresponding field-effect mobility was 0.04 cm2 V−1 s−1. Overall, the results indicated a lower resistance for the post-patterned WS2 device compared to its pre-patterned counterpart, but the results are not comparable since the flake geometry, thickness and quality varied between the pre-patterned and post-patterned devices. However, all gate-sweep measurements demonstrated limited electrostatic modulation, characterized by weak on-off ratios and large subthreshold swing values, which is consistent with suppressed carrier injection. The results indicate that electrical transport in the fabricated devices is dominated by several extrinsic factors, including contact resistance, ambient conditions, interfacial contamination, and measurement constraints, rather than intrinsic TMD channel properties. These require future work and optimization.
Overall this work highlights the challenges associated with fabricating and measuring electrical properties of 2D semiconductor devices and provides practical guidance for improving fabrication workflows, interface engineering, and measurement strategies for future exploration of 1-D TMD-based
electronics.
Hydrogen Diffusion in Multi-Principal Element Alloys
A Kinetic Monte Carlo and Machine Learning Framework for Hydrogen Diffusion in Chemically Complex BCC Alloys
DFT study of Functionalised Graphene as an Electrode Material for Sodium-Ion Batteries
Testing the Viability of NHCH3 - Benzene, Aminobenzene and Phenol as Spacers Between Graphene Layers
With the aim of overcoming these difficulties, this study adopts a first principles calculations approach based on density functional theory (DFT) to investigate the influence of Cu and P on the underlying features of the H dissolution processes into bulk and grain boundary (GB) structures of α- and γ-Fe. The findings revealed that H prefers interstitial sites with higher electron pair density as described by the electron localization function (ELF) and more extensive charge transfer in bulk ferrite while the opposite behavior was observed for hydrogen accommodation in pure austenite. The addition of Cu was found to facilitate H dissolution in both phases of Fe while P was found to hinder this phenomenon. These effects were related to H’s positive and negative impact on the stability of the Fe-Cu and Fe-P bonds. Regardless of the interfacial character of the GBs investigated in this study, favorable H segregation takes place at sites with lower ELF and are accompanied by less charge accumulation. The hydrogen co-segregation effects with Cu and P exhibited different features between the closed-packed and open GB structures. In the former, the presence of the substitutional elements created an overall unfavorable dissolution environment for H regardless of the crystal structure. On the other hand, it was found that in the more disordered GBs the presence of Cu and P exhibited varying influence on the H dissolution processes. While for the ferritic GB Cu can enhance the H segregation at the interface by means of increasing the interstitial volume, it was found to alter the site preferability of H towards the open γ-Fe GB structure. In contrast, the result for P revealed a slightly favorable tendency for H dissolution suggesting the formation of bonds with the local Fe atoms, while in the α-Fe P mainly repels H from the interface. In both cases, the results revealed that simultaneous presence of both Cu-H and P-H cannot be excluded at more disordered GBs.
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With the aim of overcoming these difficulties, this study adopts a first principles calculations approach based on density functional theory (DFT) to investigate the influence of Cu and P on the underlying features of the H dissolution processes into bulk and grain boundary (GB) structures of α- and γ-Fe. The findings revealed that H prefers interstitial sites with higher electron pair density as described by the electron localization function (ELF) and more extensive charge transfer in bulk ferrite while the opposite behavior was observed for hydrogen accommodation in pure austenite. The addition of Cu was found to facilitate H dissolution in both phases of Fe while P was found to hinder this phenomenon. These effects were related to H’s positive and negative impact on the stability of the Fe-Cu and Fe-P bonds. Regardless of the interfacial character of the GBs investigated in this study, favorable H segregation takes place at sites with lower ELF and are accompanied by less charge accumulation. The hydrogen co-segregation effects with Cu and P exhibited different features between the closed-packed and open GB structures. In the former, the presence of the substitutional elements created an overall unfavorable dissolution environment for H regardless of the crystal structure. On the other hand, it was found that in the more disordered GBs the presence of Cu and P exhibited varying influence on the H dissolution processes. While for the ferritic GB Cu can enhance the H segregation at the interface by means of increasing the interstitial volume, it was found to alter the site preferability of H towards the open γ-Fe GB structure. In contrast, the result for P revealed a slightly favorable tendency for H dissolution suggesting the formation of bonds with the local Fe atoms, while in the α-Fe P mainly repels H from the interface. In both cases, the results revealed that simultaneous presence of both Cu-H and P-H cannot be excluded at more disordered GBs.
Optimization of thermoelectric Si-Ge
Doping optimization of nanostructured Si80Ge20Bx for radioisotope thermoelectric generators
To optimize the properties of silicon-germanium we studied the effect of doping concentration and processing parameters on the microstructure and properties of boron-doped Si80Ge20 produced by arc melting, ball milling and spark plasma sintering. The thermal conductivity was estimated with a model. The electrical conductivity and Seebeck coefficient were measured.
Some conclusions from this work are that the current production process can be used to produce nanostructured Si80Ge20Bx with a crystallite size of 50-100 nm. This material reaches a maximum, but not necessarily optimal, doping concentration when x=1 due to limited solubility. The material suffers from grain growth when exposed to high temperatures for several days. The use of iron in the ball milling process significantly affected the microstructure and properties. ...
To optimize the properties of silicon-germanium we studied the effect of doping concentration and processing parameters on the microstructure and properties of boron-doped Si80Ge20 produced by arc melting, ball milling and spark plasma sintering. The thermal conductivity was estimated with a model. The electrical conductivity and Seebeck coefficient were measured.
Some conclusions from this work are that the current production process can be used to produce nanostructured Si80Ge20Bx with a crystallite size of 50-100 nm. This material reaches a maximum, but not necessarily optimal, doping concentration when x=1 due to limited solubility. The material suffers from grain growth when exposed to high temperatures for several days. The use of iron in the ball milling process significantly affected the microstructure and properties.
Molecular Simulations for Hydrogen Storage and Production
From quantum to force field-based methods
Anisotropic Stress, Plasticity, and Microstructural Evolution in Crystalline Materials
From Grain Boundaries to Nanostructures
This thesis project evaluates the performance of the best available uMLIPs, specifically MACE-MP-0, CHGNet, M3GNet, and SevenNet-0, in predicting single-solute GB segregation energies, GB energies for both body-centered cubic (BCC) Fe and face-centered cubic (FCC) Fe systems, and solution enthalpies for BCC Fe and cementite. The results were compared against existing studies conducted via DFT calculations to assess the accuracy and applicability of each uMLIP. Additionally, some EIPs were tested for comparison, serving as an extra reference. The findings reveal that MACE-MP-0 generally outperforms the other uMLIPs in both accuracy and stability of convergence. While all tested uMLIPs perform well in BCC Fe systems, CHGNet(v0.2.0) and SevenNet-0 show reduced accuracy in FCC Fe simulations. Although most of the simulations using uMLIPs converged well in BCC Fe GBs, many unconverged cases were reported in FCC Fe systems, particularly for uMLIPs other than MACE-MP-0 and CHGNet(v0.3.0). Furthermore, a consistent underprediction of segregation tendencies for highly segregating solute elements, such as Cu, is observed in the results of MACE-MP-0 and CHGNet. This suggests that while uMLIPs hold significant potential for atomistic simulations, fine-tuning pre-trained uMLIP models for out-of-distribution tasks, such as calculating GB segregation energy, is recommended to improve accuracy and convergence behavior. This work offers a valuable benchmark for using uMLIPs in future GB segregation studies. ...
This thesis project evaluates the performance of the best available uMLIPs, specifically MACE-MP-0, CHGNet, M3GNet, and SevenNet-0, in predicting single-solute GB segregation energies, GB energies for both body-centered cubic (BCC) Fe and face-centered cubic (FCC) Fe systems, and solution enthalpies for BCC Fe and cementite. The results were compared against existing studies conducted via DFT calculations to assess the accuracy and applicability of each uMLIP. Additionally, some EIPs were tested for comparison, serving as an extra reference. The findings reveal that MACE-MP-0 generally outperforms the other uMLIPs in both accuracy and stability of convergence. While all tested uMLIPs perform well in BCC Fe systems, CHGNet(v0.2.0) and SevenNet-0 show reduced accuracy in FCC Fe simulations. Although most of the simulations using uMLIPs converged well in BCC Fe GBs, many unconverged cases were reported in FCC Fe systems, particularly for uMLIPs other than MACE-MP-0 and CHGNet(v0.3.0). Furthermore, a consistent underprediction of segregation tendencies for highly segregating solute elements, such as Cu, is observed in the results of MACE-MP-0 and CHGNet. This suggests that while uMLIPs hold significant potential for atomistic simulations, fine-tuning pre-trained uMLIP models for out-of-distribution tasks, such as calculating GB segregation energy, is recommended to improve accuracy and convergence behavior. This work offers a valuable benchmark for using uMLIPs in future GB segregation studies.
of sodium sulfate spherulites. We characterized the spherulites’ morphological evolution and chemical/structural composition using various microscopy techniques and Raman Spectroscopy. The study reveals that faceted crystals, during their morphological evolution, can transiently exhibit a spherulitic morphology before attaining their final shape. We demonstrate that adding bivalent ions to sulfate solutions can create the conditions required for the spherulitic growth of the crystal phase. We show how to obtain perfectly developed spherulites through an in-depth experimental investigation of ion concentrations, evaporation rate, and geometric constraints. Moreover, quantifying the growth conditions enables a precise understanding and facilitates a comprehensive discussion on a general approach for
cultivating spherulites through solvent evaporation that is imperative for innovative purposes.
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of sodium sulfate spherulites. We characterized the spherulites’ morphological evolution and chemical/structural composition using various microscopy techniques and Raman Spectroscopy. The study reveals that faceted crystals, during their morphological evolution, can transiently exhibit a spherulitic morphology before attaining their final shape. We demonstrate that adding bivalent ions to sulfate solutions can create the conditions required for the spherulitic growth of the crystal phase. We show how to obtain perfectly developed spherulites through an in-depth experimental investigation of ion concentrations, evaporation rate, and geometric constraints. Moreover, quantifying the growth conditions enables a precise understanding and facilitates a comprehensive discussion on a general approach for
cultivating spherulites through solvent evaporation that is imperative for innovative purposes.
Quantum to Transport
Modeling Transport Properties of Aqueous Potassium Hydroxide by Machine Learning Molecular Force Fields from Quantum Mechanics
Results of structure properties produced with ab initio molecular dynamics (AIMD, at quantum scale) simulations are compared with machine learning molecular dynamics (MLMD, at multi scale) simulations. There are no significant differences in the calculated shortest typical atomic distances and coordination numbers for both KOH (aq) and pure water systems. The determined transport properties are in the same order of magnitude as experimental results, although the calculated viscosity is overestimated and the self-diffusion of H2O and K+ are underestimated. This is because the system is simulated at a higher than experimental density and hydrogen bonding is overestimated with the selected quantum mechanics model. The proton transfer reactions are captured in the MLMD simulations, calculating the enhanced self-diffusion of OH- to be (6±2)e-9 m squared per second, which matches experimental results at infinite dilution. ...
Results of structure properties produced with ab initio molecular dynamics (AIMD, at quantum scale) simulations are compared with machine learning molecular dynamics (MLMD, at multi scale) simulations. There are no significant differences in the calculated shortest typical atomic distances and coordination numbers for both KOH (aq) and pure water systems. The determined transport properties are in the same order of magnitude as experimental results, although the calculated viscosity is overestimated and the self-diffusion of H2O and K+ are underestimated. This is because the system is simulated at a higher than experimental density and hydrogen bonding is overestimated with the selected quantum mechanics model. The proton transfer reactions are captured in the MLMD simulations, calculating the enhanced self-diffusion of OH- to be (6±2)e-9 m squared per second, which matches experimental results at infinite dilution.
The modelling part of the thesis will be focused on the design of and development of a DAC model in the open source software ’Python’. The amine based sorbent that is investigated and used for the creation of the model is Lewatit VP OC 1065. Using experimental data gathered from the literature together with feasible assumptions, a model will be built to recreate the the whole DAC process and analyse the system. The main focus will be on acquiring a flexible model for both the adsorption and desorption parts of the DAC process to make further investigation of the system parameters possible. This model will be used after this thesis for further development and, for instance, analysing different possible sorbents. ...
The modelling part of the thesis will be focused on the design of and development of a DAC model in the open source software ’Python’. The amine based sorbent that is investigated and used for the creation of the model is Lewatit VP OC 1065. Using experimental data gathered from the literature together with feasible assumptions, a model will be built to recreate the the whole DAC process and analyse the system. The main focus will be on acquiring a flexible model for both the adsorption and desorption parts of the DAC process to make further investigation of the system parameters possible. This model will be used after this thesis for further development and, for instance, analysing different possible sorbents.
Boron-based two-dimensional materials showcase promise in variety of fields like hydrogen storage, fabrication of electronic devices and catalytic applications. These materials have garnered interest owing to their unique properties such as high electron mobility, high gravimetric capacity for hydrogen especially after metal decoration, thermal conductivity and tensile strength amongst others. However, for sustained operations of the devices involving these materials, their chemical stability against oxygen is of paramount importance. Especially in the applications involving exposure of the material to air. Abundance of oxygen in the air and its high reactivity increases the likelihood of oxidation of the material. In this work, chemical stability of hydrogen passivated 2D Boron structures; Borophane and 2D Boron Hydride against oxygen were analysed. First-principles calculations reveal that Borophane and 2D Boron Hydride have a less negative binding energy thus indicating that the oxygen binds less strongly to compared to Borophene which does not possess surface passivation by hydrogen. Experimental studies in the literature involving synthesis of 2D Boron Hydride reported presence of vacancies. The effect of vacancy site towards the reaction with oxygen was therefore analysed to maintain consistency with the synthesized materials. The simulations were performed on Borophane and 2D Boron Hydride by introducing a Boron vacancy in the system. The DFT simulation of defect containing Borophane revealed that oxygen binds less strongly in the physisorbed state and more strongly in the chemisorbed state, relative to the values obtained for Borophane without any defects. In case of 2D Boron Hydride it was observed that the vacancies provide a stable site for oxygen, for both physisorbed and chemisorbed state. From these simulations we can conclude that presence of vacancies in Boron based 2D materials generally leads to a stable site for oxygen.
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Boron-based two-dimensional materials showcase promise in variety of fields like hydrogen storage, fabrication of electronic devices and catalytic applications. These materials have garnered interest owing to their unique properties such as high electron mobility, high gravimetric capacity for hydrogen especially after metal decoration, thermal conductivity and tensile strength amongst others. However, for sustained operations of the devices involving these materials, their chemical stability against oxygen is of paramount importance. Especially in the applications involving exposure of the material to air. Abundance of oxygen in the air and its high reactivity increases the likelihood of oxidation of the material. In this work, chemical stability of hydrogen passivated 2D Boron structures; Borophane and 2D Boron Hydride against oxygen were analysed. First-principles calculations reveal that Borophane and 2D Boron Hydride have a less negative binding energy thus indicating that the oxygen binds less strongly to compared to Borophene which does not possess surface passivation by hydrogen. Experimental studies in the literature involving synthesis of 2D Boron Hydride reported presence of vacancies. The effect of vacancy site towards the reaction with oxygen was therefore analysed to maintain consistency with the synthesized materials. The simulations were performed on Borophane and 2D Boron Hydride by introducing a Boron vacancy in the system. The DFT simulation of defect containing Borophane revealed that oxygen binds less strongly in the physisorbed state and more strongly in the chemisorbed state, relative to the values obtained for Borophane without any defects. In case of 2D Boron Hydride it was observed that the vacancies provide a stable site for oxygen, for both physisorbed and chemisorbed state. From these simulations we can conclude that presence of vacancies in Boron based 2D materials generally leads to a stable site for oxygen.
In this work, a combined ab-initio - experimental approach was used to study the absorption of hydrogen in dual-phase steel. Density Functional Theory (DFT) calculations were employed to study and compare the trapping of hydrogen by carbide and nitride of titanium and vanadium. A carbon or nitrogen vacancy in the bulk of the precipitate was found to be the most efficient trap site. When coupled with the vacancy formation energy, trapping was found to be more efficient in off-stoichiometric vanadium carbide and nitride than that in titanium carbide and nitride. To validate the theoretical findings, cyclic voltammetry experiments were conducted on two grades of DP800 steel with different concentrations of vanadium and titanium. The amount of diffusible hydrogen in the vanadium grade was found to be approximately 25 \% higher than that in the titanium grade. This was in contradiction to the theoretical results. Characterisation of the specimen post testing revealed that an oxide film had formed on the sample surface and while the film on vanadium grade was uniform and dense, that on titanium grade was sparse and irregular. It was evident that the oxide layer contributed to trapping of hydrogen, however the amount of hydrogen trapped by the oxide could not be specified. Overall, designing steels resistant to hydrogen embrittlement by promoting the formation of precipitates of a particular element is theoretically attainable, however, it was not possible to obtain experimental validation with the method employed. ...
In this work, a combined ab-initio - experimental approach was used to study the absorption of hydrogen in dual-phase steel. Density Functional Theory (DFT) calculations were employed to study and compare the trapping of hydrogen by carbide and nitride of titanium and vanadium. A carbon or nitrogen vacancy in the bulk of the precipitate was found to be the most efficient trap site. When coupled with the vacancy formation energy, trapping was found to be more efficient in off-stoichiometric vanadium carbide and nitride than that in titanium carbide and nitride. To validate the theoretical findings, cyclic voltammetry experiments were conducted on two grades of DP800 steel with different concentrations of vanadium and titanium. The amount of diffusible hydrogen in the vanadium grade was found to be approximately 25 \% higher than that in the titanium grade. This was in contradiction to the theoretical results. Characterisation of the specimen post testing revealed that an oxide film had formed on the sample surface and while the film on vanadium grade was uniform and dense, that on titanium grade was sparse and irregular. It was evident that the oxide layer contributed to trapping of hydrogen, however the amount of hydrogen trapped by the oxide could not be specified. Overall, designing steels resistant to hydrogen embrittlement by promoting the formation of precipitates of a particular element is theoretically attainable, however, it was not possible to obtain experimental validation with the method employed.