HV power MOSFET embedding
R. Younis (TU Delft - Electrical Engineering, Mathematics and Computer Science)
René H. Poelma – Mentor (TU Delft - Electronic Components, Technology and Materials)
Guo-Qi Zhang – Mentor (TU Delft - Electronic Components, Technology and Materials)
P. J. French – Mentor (TU Delft - Bio-Electronics)
H.W. van Zeijl – Mentor (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Power electronics are an important technology used to convert electricity from a source like a battery or high voltage DC bus to more usable forms of electricity. This has to be done efficiently, reliably and without failures which is critical in applications like electric cars or datacenters. Power MOSFETs with upcoming SiC and GaN devices are an important building block used in these converters. Hence these power MOSFET devices have to be improved continuously to get a lower on resistance (RDSon), a better thermal dissipation and lower parasitic losses. In this thesis we will take a look at the embedding of power MOSFETs inside a PCB to obtain these improvements. This new technology needs to be evaluated in terms of reliability, failure-modes and thermal/electrical performance. By designing,
manufacturing and testing a PCB with embedded devices. During manufacturing silver sintering has been used for attaching the die to a copper coin. In the end the manufacturing has been done successfully.
Testing showed an 18% lower RDSon and a twice as low junction to ambient thermal impedance indicating a better performance compared to regular packaging.