Strain rate and temperature dependent viscoplasticity of sintered Cu nanoparticles
Leiming Du (TU Delft - Electronic Components, Technology and Materials)
Gerald Schaffar (Montan University of Leoben)
René H. Poelma (TU Delft - Electronic Components, Technology and Materials)
Jiajie Fan (TU Delft - Electronic Components, Technology and Materials, Fudan University)
Willem D. van Driel (TU Delft - Electronic Components, Technology and Materials)
Xuejun Fan (Lamar University, TU Delft - Electronic Components, Technology and Materials)
Daniel Kiener (Montan University of Leoben)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
Verena Maier-Kiener (Montan University of Leoben)
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Abstract
Sintered Cu nanoparticles (NPs) are promising for high-performance electronics due to their excellent thermal and electrical conductivity, as well as mechanical reliability. This study investigates the microscale mechanical behavior of sintered Cu NPs with a bimodal particle size distribution, focusing on strain rate and temperature effects. Micro-pillar compression tests were performed across strain rates of 0.0001 s−1 to 0.01 s−1 and temperatures from 25 °C to 350 °C. Results show that higher strain rates enhance yield strength through strain-rate hardening, while elevated temperatures lead to thermal softening and reduced mechanical stability. The Anand viscoplastic model accurately predicts these deformation behaviors. Microstructural analysis via scanning electron microscopy (SEM) and transmission electron microscopy (TEM) reveals localized deformation at 175 °C, with dislocations concentrated near the top surface and persistent porosity below, whereas at 350 °C, re-sintering and grain boundary diffusion create a denser microstructure. Phase-field fracture modeling further elucidates crack propagation, emphasizing the role of pore size and temperature. This combined experimental and modeling approach enhances understanding of viscoplastic deformation and fracture mechanisms in sintered Cu NPs, informing their use in interconnects, power electronics and thermal management systems.