Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

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Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Journal Article (2018)

Author(s)

Rosario M. Incandela (TU Delft - QuTech Advanced Research Centre, TU Delft - OLD QCD/Charbon Lab, Kavli institute of nanoscience Delft)

Lin Song (TU Delft - ImPhys/Quantitative Imaging, Analog Devices Inc.)

Harald Homulle (Kavli institute of nanoscience Delft, TU Delft - OLD QCD/Charbon Lab, TU Delft - QuTech Advanced Research Centre)

Edoardo Charbon (Intel Corporation, Kavli institute of nanoscience Delft, TU Delft - OLD QCD/Charbon Lab, TU Delft - (OLD)Applied Quantum Architectures)

Andrei Vladimirescu (Institut Supérieur d’Electronique de Paris,, University of California)

Fabio Sebastiano (TU Delft - (OLD)Applied Quantum Architectures)

Modeling Characterization Quantum computing CMOS CMOS technology Cryogenic electronics Cryo-CMOS Cryogenic MOS devices Cryogenics Integrated circuit modeling 4 K Kink LNA. Semiconductor device modeling

DOI related publication

https://doi.org/10.1109/JEDS.2018.2821763 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:f22c449c-beae-4504-a4a3-b5b9f791906a

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Publication Year

2018

Language

English

Journal title

IEEE Journal of the Electron Devices Society

Volume number

6

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343

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Abstract

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

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