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Flag-style fault-tolerance has become a linchpin in the realization of small fault-tolerant quantum-error correction experiments. The flag protocol's utility hinges on low qubit over-head, which is typically much smaller than in other approaches. However, as in most fault-tolerance protocols, the advantages of flag-style error correction come with a tradeoff: fault tolerance can be guaranteed, but such protocols involve high-depth circuits, due to the need for repeated stabilizer measurements. Here, we demonstrate that a dynamic choice of stabilizer measurements, based on past syndromes, and the utilization of elements from the full stabilizer group, leads to flag protocols with lower-depth syndrome-extraction circuits for the [[5], [1], [3]] code, as well as for the Steane code when compared to the standard methods in flag fault tolerance. We methodically prove that our new protocols yield fault-tolerant lookup tables, and demonstrate them with a pseudothreshold simulation, showcasing large improvements for all protocols when compared to previously-established methods. This work opens the dialogue on exploiting the properties of the full stabilizer group for reducing circuit overhead in fault-tolerant quantum-error correction.
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Flag-style fault-tolerance has become a linchpin in the realization of small fault-tolerant quantum-error correction experiments. The flag protocol's utility hinges on low qubit over-head, which is typically much smaller than in other approaches. However, as in most fault-tolerance protocols, the advantages of flag-style error correction come with a tradeoff: fault tolerance can be guaranteed, but such protocols involve high-depth circuits, due to the need for repeated stabilizer measurements. Here, we demonstrate that a dynamic choice of stabilizer measurements, based on past syndromes, and the utilization of elements from the full stabilizer group, leads to flag protocols with lower-depth syndrome-extraction circuits for the [[5], [1], [3]] code, as well as for the Steane code when compared to the standard methods in flag fault tolerance. We methodically prove that our new protocols yield fault-tolerant lookup tables, and demonstrate them with a pseudothreshold simulation, showcasing large improvements for all protocols when compared to previously-established methods. This work opens the dialogue on exploiting the properties of the full stabilizer group for reducing circuit overhead in fault-tolerant quantum-error correction.
We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial 28Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17 V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1 mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.
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We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial 28Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17 V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1 mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.
