The classical problem of subwavelength particle detection on a flat surface is especially challenging when the refractive index of the particle is close to that of the substrate. We demonstrate a method to improve the detection ability several times for such a situation, by enhancing the "forbidden" evanescent waves in the substrate using the principle of super-resolution with evanescent waves amplification. The working mechanism of the system and experimental validation from a design with a thin single dielectric layer is presented. The resulting system is a simple but complete example of evanescent-wave generation, amplification, and the consequent modulation of the far field. This principle can have far reaching impact in the field of particle detection in several applications ranging from contamination control to interferometric scattering microscopy for biological samples.

We demonstrate a method to obtain within an arbitrary numerical aperture (NA) the entire scattering matrix of a scatterer by using focused beam coherent Fourier scatterometry. The far-field intensities of all scattered angles within the NA of the optical system are obtained in one shot. The corresponding phases of the field are obtained by an interferometric configuration. This method enables the retrieval of the maximum available information about the scatterer from scattered far-field data contained in the given NA of the system.

Optical scatterometry is the state of art optical inspection technique for quality control in lithographic process. As such, any boost in its performance carries very relevant potential in semiconductor industry. Recently we have shown that coherent Fourier scatterometry (CFS) can lead to a notably improved sensitivity in the reconstruction of the geometry of printed gratings. In this work, we report on implementation of a CFS instrument, which confirms the predicted performances. The system, although currently operating at a relatively low numerical aperture (NA = 0.4) and long wavelength (633 nm) allows already the reconstruction of the grating parameters with nanometer accuracy, which is comparable to that of AFM and SEM measurements on the same sample, used as reference measurements. Additionally, 1 nm accuracy in lateral positioning has been demonstrated, corresponding to 0.08% of the pitch of the grating used in the actual experiment.