In this work, the structural, electronic and optical properties of germanene and ZnSe substrate nanocomposites have been investigated using first-principles calculations. We found that the large direct-gap ZnSe semiconductors and zero-gap germanene form a typical orbital hybridization heterostructure with a strong binding energy, which shows a moderate direct band gap of 0.503 eV in the most stable pattern. Furthermore, the heterostructure undergoes semiconductor-to-metal band gap transition when subjected to external out-of-plane electric field. We also found that applying external strain and compressing the interlayer distance are two simple ways of tuning the electronic structure. An unexpected indirect-direct band gap transition is also observed in the AAII pattern via adjusting the interlayer distance. Quite interestingly, the calculated results exhibit that the germanene/ZnSe heterobilayer structure has perfect optical absorption in the solar spectrum as well as the infrared and UV light zones, which is superior to that of the individual ZnSe substrate and germanene. The staggered interfacial gap and tunability of the energy band structure via interlayer distance and external electric field and strain thus make the germanene/ZnSe heterostructure a promising candidate for field effect transistors (FETs) and nanoelectronic applications.@en

A systematic study of discrete SiC MOSFETs' reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation according to the structure of MOSFET cell has been performed. The result shows that the threshold voltages change trends of both MOSFETs are the same, including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.@en

A systematic study of discrete SiC MOSFETs' reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation according to the structure of MOSFET cell has been performed. The result shows that the threshold voltages change trends of both MOSFETs are the same, including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.@en

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.@en