Colloidal quantum dots (QDs) show great promise as LED phosphors due to their tunable narrow-band emission and ability to produce high-quality white light. Currently, the most suitable QDs for lighting applications are based on cadmium, which presents a toxicity problem for consumer applications. The most promising cadmium-free candidate QDs are based on InP, but their quality lags much behind that of cadmium based QDs. This is not only because the synthesis of InP QDs is more challenging than that of Cd-based QDs, but also because the large lattice parameter of InP makes it difficult to grow an epitaxial, defect-free shell on top of such material. Here, we propose a viable approach to overcome this problem by alloying InP nanocrystals with Zn²⁺ ions, which enables the synthesis of In_xZn_yP alloy QDs having lattice constant that can be tuned from 5.93 Å (pure InP QDs) down to 5.39 Å by simply varying the concentration of the Zn precursor. This lattice engineering allows for subsequent strain-free, epitaxial growth of a ZnSe_zS_1-z shell with lattice parameters matching that of the core. We demonstrate, for a wide range of core and shell compositions (i.e.; varying x, y, and z), that the photoluminescence quantum yield is maximal (up to 60%) when lattice mismatch is minimal.

The surface diffusion of individual molecules is of paramount importance in self-assembly processes and catalytic processes. However, the fundamental understanding of molecule diffusion peculiarities considering conformations and adsorption sites remain poorly known at the atomic scale. Here, we probe the 4′-(4-tolyl)-2,2′:6′,2″-terpyridine adsorbed on the Au(111) herringbone structure combining scanning tunneling microscopy and atomic force microscopy. Molecules are controllably translated by electrons excitations over the reconstruction, except at elbows acting as pinning centers. Experimental data supported by theoretical calculations show the formation of coordination bonds between the molecule and Au atoms of the surface. Using force spectroscopy, we quantify local variation of the surface potential and the lateral force required to move the molecule. We found an elevation of the diffusion barrier at elbows of the reconstruction of ∼100 meV compared to the rest of the surface.

The surface diffusion of individual molecules is of paramount importance in self-assembly processes and catalytic processes. However, the fundamental understanding of molecule diffusion peculiarities considering conformations and adsorption sites remain poorly known at the atomic scale. Here, we probe the 4′-(4-tolyl)-2,2′:6′,2″-terpyridine adsorbed on the Au(111) herringbone structure combining scanning tunneling microscopy and atomic force microscopy. Molecules are controllably translated by electrons excitations over the reconstruction, except at elbows acting as pinning centers. Experimental data supported by theoretical calculations show the formation of coordination bonds between the molecule and Au atoms of the surface. Using force spectroscopy, we quantify local variation of the surface potential and the lateral force required to move the molecule. We found an elevation of the diffusion barrier at elbows of the reconstruction of ∼100 meV compared to the rest of the surface.

The surface diffusion of individual molecules is of paramount importance in self-assembly processes and catalytic processes. However, the fundamental understanding of molecule diffusion peculiarities considering conformations and adsorption sites remain poorly known at the atomic scale. Here, we probe the 4′-(4-tolyl)-2,2′:6′,2″-terpyridine adsorbed on the Au(111) herringbone structure combining scanning tunneling microscopy and atomic force microscopy. Molecules are controllably translated by electrons excitations over the reconstruction, except at elbows acting as pinning centers. Experimental data supported by theoretical calculations show the formation of coordination bonds between the molecule and Au atoms of the surface. Using force spectroscopy, we quantify local variation of the surface potential and the lateral force required to move the molecule. We found an elevation of the diffusion barrier at elbows of the reconstruction of ∼100 meV compared to the rest of the surface.

The surface diffusion of individual molecules is of paramount importance in self-assembly processes and catalytic processes. However, the fundamental understanding of molecule diffusion peculiarities considering conformations and adsorption sites remain poorly known at the atomic scale. Here, we probe the 4′-(4-tolyl)-2,2′:6′,2″-terpyridine adsorbed on the Au(111) herringbone structure combining scanning tunneling microscopy and atomic force microscopy. Molecules are controllably translated by electrons excitations over the reconstruction, except at elbows acting as pinning centers. Experimental data supported by theoretical calculations show the formation of coordination bonds between the molecule and Au atoms of the surface. Using force spectroscopy, we quantify local variation of the surface potential and the lateral force required to move the molecule. We found an elevation of the diffusion barrier at elbows of the reconstruction of ∼100 meV compared to the rest of the surface.

The surface diffusion of individual molecules is of paramount importance in self-assembly processes and catalytic processes. However, the fundamental understanding of molecule diffusion peculiarities considering conformations and adsorption sites remain poorly known at the atomic scale. Here, we probe the 4′-(4-tolyl)-2,2′:6′,2″-terpyridine adsorbed on the Au(111) herringbone structure combining scanning tunneling microscopy and atomic force microscopy. Molecules are controllably translated by electrons excitations over the reconstruction, except at elbows acting as pinning centers. Experimental data supported by theoretical calculations show the formation of coordination bonds between the molecule and Au atoms of the surface. Using force spectroscopy, we quantify local variation of the surface potential and the lateral force required to move the molecule. We found an elevation of the diffusion barrier at elbows of the reconstruction of ∼100 meV compared to the rest of the surface.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

In semiconductor quantum dots (QDs), charge carrier cooling is in direct competition with processes such as carrier multiplication or hot charge extraction that may improve the light conversion efficiency of photovoltaic devices. Understanding charge carrier cooling is therefore of great interest. We investigate high-energy optical transitions in PbSe QDs using hyperspectral transient absorption spectroscopy. We observe bleaching of optical transitions involving higher valence and conduction bands upon band edge excitation. The kinetics of rise of the bleach of these transitions after a pump laser pulse allow us to monitor, for the first time, cooling of hot electrons and hot holes separately. Our results show that holes cool significantly faster than electrons in PbSe QDs. This is in contrast to the common assumption that electrons and holes behave similarly in Pb chalcogenide QDs and has important implications for the utilization of hot charge carriers in photovoltaic devices.

The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We have determined the photogeneration charge carrier quantum yield and mobility in atomically thin colloidal InSe nanosheets (inorganic layer thickness 0.8-1.7 nm, mono/double-layers, ≤ 5 nm including ligands) by ultrafast transient terahertz (THz) spectroscopy. A near unity quantum yield of free charge carriers is determined for low photoexcitation density. The charge carrier quantum yield decreases at higher excitation density due to recombination of electrons and holes, leading to the formation of neutral excitons. In the THz frequency domain, we probe a charge mobility as high as 20 ± 2 cm²/(V s). The THz mobility is similar to field-effect transistor mobilities extracted from unmodified exfoliated thin InSe devices. The current work provides the first results on charge carrier dynamics in ultrathin colloidal InSe nanosheets.

Determining the mechanism of charge transport through native DNA remains a challenge as different factors such as measuring conditions, molecule conformations, and choice of technique can significantly affect the final results. In this contribution, we have used a new approach to measure current flowing through isolated double-stranded DNA molecules, using fullerene groups to anchor the DNA to a gold substrate. Measurements were performed at room temperature in an inert environment using a conductive AFM technique. It is shown that the π-stacked B-DNA structure is conserved on depositing the DNA. As a result, currents in the nanoampere range were obtained for voltages ranging between ±1 V. These experimental results are supported by a theoretical model that suggests that a multistep hopping mechanism between delocalized domains is responsible for the long-range current flow through this specific type of DNA.

Thermalization losses limit the photon-to-power conversion of solar cells at the high-energy side of the solar spectrum, as electrons quickly lose their energy relaxing to the band edge. Hot-electron transfer could reduce these losses. Here, we demonstrate fast and efficient hot-electron transfer between lead selenide and cadmium selenide quantum dots assembled in a quantum-dot heterojunction solid. In this system, the energy structure of the absorber material and of the electron extracting material can be easily tuned via a variation of quantum-dot size, allowing us to tailor the energetics of the transfer process for device applications. The efficiency of the transfer process increases with excitation energy as a result of the more favorable competition between hot-electron transfer and electron cooling. The experimental picture is supported by time-domain density functional theory calculations, showing that electron density is transferred from lead selenide to cadmium selenide quantum dots on the sub-picosecond timescale.

Organic-inorganic hybrid halide perovskites are a promising class of materials for photovoltaic application with reported power efficiencies over ∼22%. However, not much is known about the influence of the organic dipole rotation and phase transitions on charge carrier dynamics. Here, we report substantial changes in mobility and lifetime of charge carriers in CH₃NH₃PbI₃ after the low-temperature tetragonal (β) to orthorhombic (γ) phase transition. By using microwave conductivity measurements, we observed that the mobility and lifetime of ionized charge carriers increase as the temperature decreases and a sudden increment is seen after the β-γ phase transition. For CH₃NH₃PbI₃, the mobility and the half-lifetime increase by a factor of 3-6 compared with the values before the β-γ phase transition. We attribute the considerable change in the dynamics at low temperature to the decrease of the inherent dynamic disorder of the organic cation (CH₃NH₃ ⁺) inside the perovskite crystal structure.

The fundamental opto-electronic properties of organic-inorganic hybrid perovskites are strongly affected by their structural parameters. These parameters are particularly critical in formamidinium lead iodide (FAPbI₃), in which its large structural disorder leads to a non-perovskite yellow phase that hinders its photovoltaic performance. A clear understanding of how the structural parameters affect the opto-electronic properties is currently lacking. We have studied the opto-electronic properties of FAPbI₃ using microwave conductivity measurements. We find that the mobility of FAPbI₃ increases at low temperature following a phonon scattering behavior. Unlike methylammonium lead iodide (MAPbI₃), there are no abrupt changes after the low-temperature β/γ phase transition and the lifetime is remarkably long. This absence of abrupt changes can be understood in terms of the reduced rotational freedom and smaller dipole moment of the formamidinium, as compared to methylammonium.

The optoelectronic properties of hybrid perovskites can be easily tailored by varying their components. Specifically, mixing the common short organic cation (methylammonium (MA)) with a larger one (e.g., butyl ammonium (BA)) results in 2-dimensional perovskites with varying thicknesses of inorganic layers separated by the large organic cation. In both of these applications, a detailed understanding of the dissociation and recombination of electron-hole pairs is of prime importance. In this work, we give a clear experimental demonstration of the interconversion between bound excitons and free charges as a function of temperature by combining microwave conductivity techniques with photoluminescence measurements. We demonstrate that the exciton binding energy varies strongly (between 80 and 370 meV) with the thickness of the inorganic layers. Additionally, we show that the mobility of charges increases with the layer thickness, in agreement with calculated effective masses from electronic structure calculations.