The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10−3 Pa” should be intended as “Pa”. The authors regret for the mistake. These errors do not affect the conclusions of the work. The following errors needs to be corrected in the article. Page 45587. EXPERIMENTAL SECTION, 2.1. “2.50 × 10−3 Pa” and “2.20 × 10−3 Pa” should be “2.50 Pa” and “2.20 Pa”, respectively. Page 45588. RESULTS AND DISCUSSION, 3.1. All the “... × 10−5 Pa” should be “... × 10−2 Pa”. The physical unit of the “10−5 Pa” in the x-axis of Figure 2 should also be “10−2 Pa”. The correct Figure 2 appears below: (Figure presented).

In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage during TCO deposition. Curing treatment at temperatures above 350 °C can recover such degradation, whereas the opto-electrical properties of the TCO are affected as well, and the carrier transport at the poly-Si/TCO contact is widely reported to degrade severely in such a procedure. Here, we propose straightforward approaches, post-deposition annealing at 400 °C in nitrogen, hydrogen, or air ambience, are proposed to tailor material properties of high-mobility hydrogenated fluorine-doped indium oxide (IFO:H) film. Structural, morphological, and opto-electrical properties of the IFO:H films are investigated as well as their inherent electron scattering and doping mechanisms. Hydrogen annealing treatment proves to be the most promising strategy. The resulting layer exhibits both optimal opto-electrical properties (carrier density = 1.5 × 1020 cm-3, electron mobility = 108 cm2 V-1 s-1, and resistivity = 3.9 × 10-4 ω cm) and remarkably low contact resistivities (∼20 mω cm2 for both n- and p-contacts) in poly-Si solar cells. Even though the presented cells are limited by the metallization step, the obtained IFO:H-base solar cell show an efficiency improvement from 20.1 to 20.6% after specific hydrogen treatment, demonstrating the potential of material manipulation and contact engineering strategy in high-efficiency photovoltaic devices endowed with TCOs.