Advanced excimer-laser crystallization process for single-crystalline thin film transistor

Advanced excimer-laser crystallization techniques of Si thin-film for location control of large grain on glass

Excimer-laser lateral crystallization scenario of silicon thin films by phase-field modelling

Enlargement of location controlled Si grains by dual beam eximer-laser with bump structures

Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion

Energy density window for location-controlled Si grains by dual-beam excimer laser

Dual-beam excimer-laser induced Si grain size enlargement in an a-Si / structured SiO2 / metal stack

Transistors in excimer laser formed monocrystalline silicon thin film for large area electronics. Voortgangsrapport periode 01-10-98 t/m 31-03-99

Transistors in excimer laser formed monocrystalline silicon thin film for large area electronics. Voortgangsrapport periode 01-10-97 t/m 31-03-98

Transistor in excimer laser formed monocrystalline silicon thin film for large area electronics. Voortgangsrapport periode 01-04-97 t/m 30-09-97 [niet eerder opgevoerd]