With the rapid development of new energy vehicles and offshore wind power systems in coastal cities, the application scale of power devices is constantly increasing. However, the corrosion problem of power packaging interconnection materials caused by the humid air and chlorine-rich environment near the sea is gradually emerging. This study addresses the corrosion protection of sintered nano-copper by innovatively employing atmospheric pressure plasma jet (APPJ) technology with hexamethyldisiloxane (HMDSO) as precursor to construct organic-inorganic hybrid hydrophobic coatings on copper surfaces. Experimental results demonstrate that the coating exhibits a three-dimensional crosslinked Si-O network structure. The synergistic effect between surface micron-scale spherical clusters and methyl groups elevates the contact angle by 50 % to 153.1° Electrochemical characterization reveals that the coating positively shifts corrosion potential by 0.035 V and reduces corrosion current density from 6.008×10−7 A/cm2 to 5.542×10−7 A/cm2, while maintaining higher activation energy across the experimental temperature range (30–60℃). EIS tests show that the coating effectively increases the charge transfer impedance of the sample, indicating an improvement in corrosion resistance. The 168-hour immersion test confirms effective barrier against Cl−corrosive attack with preserved substrate integrity. Density functional theory (DFT) simulations elucidate that unsaturated methylated fragments in HMDSO preferentially graft onto copper surface via chemisorption, where strong interfacial bonding energies (-2.26 ∼ -4.38 eV) facilitate cleavage and crosslinking to form stable siloxane networks. This work proposes a novel anti-corrosion surface engineering strategy for copper interconnects, while revealing the plasma-induced interfacial bonding mechanisms of hybrid coatings, providing both theoretical and experimental foundations for developing durable electronic packaging materials.

Graphdiyne (GDY)/two-dimensional materials (2DMs) heterostructures present unique opportunities for advanced optoelectronic and neuromorphic devices because of their exceptional electrical, optical, and structural properties. However, the traditional methods for construction of GDY/2DMs heterostructures usually lead to inferior interfaces, which seriously affects the charge separation and transport. Herein, an in situ approach for growing GDY nanowalls (NWs) on WSe2 is employed in this work. The as-prepared GDY NWs/WSe2 heterostructure exhibits self-powered broadband photodetection across 405–980 nm with a high responsivity of 2176 A/W and detectivity of 3.6 × 1012 Jones at 532 nm under 0.02 mW/cm2 illumination, significantly outperforming previously reported GDY-based devices. The efficient charge separation and strong photocarrier trapping in the GDY NWs/WSe2 heterostructure result in pronounced short-term and long-term synaptic plasticity. The nonlinear, wavelength-dependent reservoir state separation enables clear distinction of multiple pulse sequences, which shows great potential for logic processing. The successfully resolved red, green, and violet patterns, and one-shot color image recognition of a 5-letter image highlight transformative potential of GDY NWs/WSe2 device for future adaptive imaging and neuromorphic computing technologies.

This Letter presents a combined analytical and experimental method to effectively decouple the radial and tangential residual stress fields induced by Berkovich nanoindentation in single-crystalline 4H-SiC using micro-Raman spectroscopy. By integrating the Raman stress characterization model with Yoffe’s expanding cavity model, precise extraction of individual residual stress components around the indentation region is realized. Through the vertical backscattering micro-Raman mapping of the E2 phonon mode, we systematically investigate the residual stress distribution near the indentation. The results highlight significant anisotropy in nanoindentation-induced stress fields, strongly dependent on the crystal orientation of 4H-SiC, predominantly featuring radial tensile stress gradients. This comprehensive theoretical–experimental approach offers a robust optical framework for residual stress characterization in 4H-SiC and provides foundational insights for extending Raman spectroscopy-based stress characterization to other crystalline materials and related device structures.

4H-SiC is widely employed in power electronic devices operating under high frequencies, voltages, and temperatures due to its exceptional physical properties. However, its inherent high hardness and elastic modulus induce inevitable residual stress during device fabrication. Raman spectroscopy, which leverages lattice dynamics, offers an effective, non-destructive, rapid, and contactless method for measuring these stresses. Nevertheless, its accuracy critically depends on precisely determining the Raman phonon deformation potential constant. This work investigates mechanically induced Raman shifts in 4H-SiC via first-principles calculations and in-situ Raman spectroscopy under hydrostatic and non-hydrostatic stress conditions. The E2(TO) and A1(LO) phonon modes exhibit sensitivity to hydrostatic stress, whereas A1(LO) remains largely unaffected under shear, reflecting directional vibrational differences. Theoretical predictions and experimental measurements agree well within 16% error, highlighting the effectiveness of Raman-based stress detection for 4H-SiC. This integrated theoretical–experimental approach provides a robust framework for stress and strain analysis, facilitating the design and fabrication of next-generation 4H-SiC electronic devices.

High-energy Al ion implantation is an indispensable technique for achieving precise doping in fabricating 4H‑SiC devices. However, it inevitably introduces interfacial damage and residual stress that can compromise subsequent manufacturing processes and device reliability. Conventional destructive characterization techniques cannot provide real-time, in‑situ, nondestructive monitoring under process conditions, creating a major bottleneck in quality control. Here, we establish a predictive modeling framework that integrates multiscale simulations with advanced, non‑destructive micro‑Raman spectroscopy to systematically investigate the evolution of high-energy Al ion implantation–induced interface defects and residual stress in 4H-SiC. Simulation results reveal a linear relationship between the implantation dose and the formation of vacancies and interstitial defects, while the stress accumulation tends to saturate at higher doses due to a dynamic equilibrium among defect interactions. Complementary micro‐Raman spectroscopy corroborates the simulations, showing that the damaged interface layer deepens from approximately 300 nm at a dose of 1014 ions cm−2 to nearly 500 nm at 1016 ions cm−2, consistent with Monte Carlo predictions. Furthermore, the molecular dynamics simulations capture a trend of the implantation stress evolution with strong concurrence with the Raman-measured residual stress. This combined computational–experimental approach elucidates the fundamental mechanisms governing defect formation and residual stress in ion‑implanted 4H‑SiC, establishes implantation dose as the pivotal role of 4H-SiC in defect density and residual stress, and underscores the utility of optical‑based characterization in real‑time, non‑invasive quality control for advanced manufacturing.

In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro-scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman-stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro-scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman-stress detection technology.

MAlSiN₃:Eu²⁺ (M = Ca, Sr) is commonly used in high-power phosphor-converted white-light-emitting diodes and laser diodes to promote their color-rendering index. However, the wide application of this phosphor is limited by the degradation of its luminescent properties in high-temperature, high-humidity, and high-sulfur-content environment. Here, the degradation mechanism of the (Sr,Ca)AlSiN₃:Eu²⁺ (SCASN) red phosphor under thermal-moisture-sulfur coupling conditions is investigated. Furthermore, by performing first-principles calculations, the hydrolysis mechanism on an atomic scale is assessed. The adsorption energy (E_ads) and charge transfer (ΔQ) results showed that H₂O chemically adsorbed on the (0 1 0), (3 1 0), and (0 0 1) surfaces of the CaAlSiN₃ (CASN) host lattice. The energy barrier for H₂O dissociation is only 29.73 kJ mol⁻¹ on the CASN (0 1 0) surface, indicating a high dissociation probability. The formation of NH₃, Ca(OH)₂, and CaAl₂Si₂O₈ is confirmed by H⁺ tended to combine with surface N atoms, while OH⁻ combined with the surface Al/Si or Ca atoms. Moreover, ab initio molecular dynamics simulations were performed to further understand the hydrolysis process. This work offers a guidance on the design and applications of luminescent materials in LED packages with higher reliability and stability requirements in harsh environment.