HT

Hongyu Tang

2 records found

High-energy Al ion implantation is an indispensable technique for achieving precise doping in fabricating 4H‑SiC devices. However, it inevitably introduces interfacial damage and residual stress that can compromise subsequent manufacturing processes and device reliability. Conven ...
With the rapid development of new energy vehicles and offshore wind power systems in coastal cities, the application scale of power devices is constantly increasing. However, the corrosion problem of power packaging interconnection materials caused by the humid air and chlorine-r ...