With the rapid development of new energy vehicles and offshore wind power systems in coastal cities, the application scale of power devices is constantly increasing. However, the corrosion problem of power packaging interconnection materials caused by the humid air and chlorine-rich environment near the sea is gradually emerging. This study addresses the corrosion protection of sintered nano-copper by innovatively employing atmospheric pressure plasma jet (APPJ) technology with hexamethyldisiloxane (HMDSO) as precursor to construct organic-inorganic hybrid hydrophobic coatings on copper surfaces. Experimental results demonstrate that the coating exhibits a three-dimensional crosslinked Si-O network structure. The synergistic effect between surface micron-scale spherical clusters and methyl groups elevates the contact angle by 50 % to 153.1° Electrochemical characterization reveals that the coating positively shifts corrosion potential by 0.035 V and reduces corrosion current density from 6.008×10−7 A/cm2 to 5.542×10−7 A/cm2, while maintaining higher activation energy across the experimental temperature range (30–60℃). EIS tests show that the coating effectively increases the charge transfer impedance of the sample, indicating an improvement in corrosion resistance. The 168-hour immersion test confirms effective barrier against Cl−corrosive attack with preserved substrate integrity. Density functional theory (DFT) simulations elucidate that unsaturated methylated fragments in HMDSO preferentially graft onto copper surface via chemisorption, where strong interfacial bonding energies (-2.26 ∼ -4.38 eV) facilitate cleavage and crosslinking to form stable siloxane networks. This work proposes a novel anti-corrosion surface engineering strategy for copper interconnects, while revealing the plasma-induced interfacial bonding mechanisms of hybrid coatings, providing both theoretical and experimental foundations for developing durable electronic packaging materials.

With the miniaturization and high-power requirements of microelectronic devices, the current density carried by interconnects in packaging structures continually increases and reaches the threshold of electromigration (EM) failure. In this study, we investigated the microstructure evolution and void formation in aluminum (Al) interconnects during EM at three different current densities (1/3/5 MA/cm ²) and proposed a method coupling the fully coupled theory with an optimized atomic flux divergence method. The results show as follows. First, for the interconnects in integrated circuits, current density is the main factor affecting the EM lifetime of the interconnects in a certain temperature range. With the gradual increase of current density, the contribution of thermal transfer on EM cannot be ignored. The atomic concentration gradient and stress gradient can inhibit EM failure. Second, the increase of length and the decrease of width of interconnect will lead to the increase of atomic flux inside the structure, resulting in the accumulation of voids and atoms. Third, the structure is dynamically reconstructed after deleting the atoms below the failure threshold and the simulation results agree well with the experimental results. Compared with the traditional atomic flux divergence method, the improved atomic flux divergence method based on the fully coupled theory can better fit the change trend of atomic concentration after interconnect failure, and the failure time error is reduced by about 10%.

Corrosion protection is one of the most important issues when copper is applied in power electronics packaging as bonding wire, die attachment, interconnection, and DBC substrate. Covering a layer of corrosion-resistant encapsulation material is a worthy consideration to protect copper. In this paper, the corrosion-resistant effects of two organic encapsulation materials, polydimethylsiloxane (PDMS) and hexamethyldisiloxane (HMDSO), on the copper surface were performed by molecular dynamics simulations. Firstly, the Cu-coating bilayer models were constructed, and the binding performances of the encapsulation material/copper interface were evaluated through calculating their interaction energy, proving that the organic coatings can form interconnection on copper surface. Then, the diffusion processes of corrosive gas molecules (H₂S, H₂O and O₂) into the copper layer under different coating conditions were simulated, and both coatings exhibited good corrosion protection performances. The above results indicate that both PDMS and HMDSO have promising potential for copper corrosion protection in power electronics packaging. This may provide some guidance for corrosion protection of copper material used in power electronics packaging.