A.J. Bottger
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24 records found
1
The growing need to reuse plastic waste has increased interest in recycled polymers for structural and semi- structural applications. Recycled polypropylene (rPP), when combined with glass fiber reinforcement and processed via 3D printing, presents a promising route for reducing plastic waste while enabling the fabrication of load-bearing components. However, the long-term durability and environmental resistance of 3D-printed rPP reinforced with glass fibers (rPP-G) remain insufficiently understood. This study investigates the degradation behavior of 3D-printed rPP-G under combined ultraviolet (UV) radiation, elevated temperature (60 and 80 °C), and high humidity (up to 95% Relative Humidity).
Results show that under moderate aging (60 °C), rPP-G retains relatively stable tensile properties with only minor reductions in strength and stiffness. In contrast, more severe aging at 80 °C and 95% RH results in notable deterioration, including approximately a 6% decrease in ultimate tensile strength, a 2% reduction in Young’s modulus, and a 30% decline in storage modulus compared to unaged material. Additionally, a shift in glass transition temperature toward lower values suggests increased molecular mobility and reduced stiffness. Creep performance is significantly affected under severe conditions, with a substantial reduction in time to failure (up to 522.58% reduction compared to the unaged specimen), indicating compromised long-term load-bearing capability.
SEM analysis reveals increased fiber pull-out and interfacial debonding, while ATR-FTIR confirms oxidative degradation. Humidity is identified as the dominant degradation factor, with temperature acting as a key accelerator. These findings highlight both the potential and limitations of rPP-G for outdoor structural applications. ...
The growing need to reuse plastic waste has increased interest in recycled polymers for structural and semi- structural applications. Recycled polypropylene (rPP), when combined with glass fiber reinforcement and processed via 3D printing, presents a promising route for reducing plastic waste while enabling the fabrication of load-bearing components. However, the long-term durability and environmental resistance of 3D-printed rPP reinforced with glass fibers (rPP-G) remain insufficiently understood. This study investigates the degradation behavior of 3D-printed rPP-G under combined ultraviolet (UV) radiation, elevated temperature (60 and 80 °C), and high humidity (up to 95% Relative Humidity).
Results show that under moderate aging (60 °C), rPP-G retains relatively stable tensile properties with only minor reductions in strength and stiffness. In contrast, more severe aging at 80 °C and 95% RH results in notable deterioration, including approximately a 6% decrease in ultimate tensile strength, a 2% reduction in Young’s modulus, and a 30% decline in storage modulus compared to unaged material. Additionally, a shift in glass transition temperature toward lower values suggests increased molecular mobility and reduced stiffness. Creep performance is significantly affected under severe conditions, with a substantial reduction in time to failure (up to 522.58% reduction compared to the unaged specimen), indicating compromised long-term load-bearing capability.
SEM analysis reveals increased fiber pull-out and interfacial debonding, while ATR-FTIR confirms oxidative degradation. Humidity is identified as the dominant degradation factor, with temperature acting as a key accelerator. These findings highlight both the potential and limitations of rPP-G for outdoor structural applications.
In this thesis, we established the first operational PeLEDs within the PVMD group, leveraging its perovskite solar cell production line. We developed the fabrication process from the ground up and characterized the resulting device performance.
The first part of this thesis addresses the stability of perovskite layers during optical testing in ambient air. We observed that carrier lifetime measurements depend heavily on the perovskite's exposure time to air and the presence of protective overlayers, rather than solely on its inherent optoelectronic properties. This instability arises from rapid perovskite degradation in air. To mitigate this, we employed spin coating to deposit a protective PMMA layer over the perovskite and optimized this coating process. Characterization confirmed that PMMA significantly slows degradation. Additionally, we identified and corrected alignment issues in the photoluminescence quantum yield (PLQY) measurement setup, which had introduced substantial uncertainty. We refined the PLQY testing procedure to enhance result reliability.
The second part focuses on developing a quasi-2D perovskite emissive layer (EML) with low bulk defect and superior optical properties. Based on quasi-2D perovskites (PEA2(FAPbBr3)n−1PbBr4) typically exhibit better emission characteristics than bulk counterpart (FAPbBr3) We first confirmed the phase composition of our synthesized perovskite, verifying the formation of quasi-2D perovskite with the targeted phase distribution (n = 3). We then introduced two additives: [2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid (2PACz) and KBr to enhance the optoelectronic property of EML. Photoluminescence (PL) testing revealed that 2PACz significantly enhances PL intensity, while KBr showed no such effect. Subsequently, we applied different antisolvents to improve perovskite film morphology. Results demonstrated that ethyl acetate yielded the highest PLQY. Our champion quasi-2D perovskite sample achieved a PLQY of up to 49\%.
The third part details the development and characterization of carrier transport layers for PeLEDs. For the electron transport layer (ETL), we employed 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) and used simulations to study how its thickness affects optical performance. Simulations indicated negligible performance variation for TPBi thicknesses between 40 nm and 80 nm. For the hole transport layer (HTL), we fabricated a self-assembled monolayer (SAM) HTL using [2-(3,6-Dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic Acid (MeO-2PACz) and [4-(3,6-Dimethoxy-9H-carbazol-9-yl)butyl]phosphonic Acid (MeO-4PACz), which could reduce interfacial defect at HTL/ETL interface. However, devices with this SAM-HTL structure didn't emit light during voltage sweeps and exhibiting low turn-on voltages in J-V characteristic. We attribute this to electrical breakdown caused by electron tunneling through the extremely thin (1-2 nm) SAM layer. To suppress tunneling, we introduced an underlying NiO$_{x}$ layer. This modified structure demonstrated to be successfully prevented tunneling and enabled functional PeLEDs. To further optimize hole transport while minimizing thickness, we modeled the relationship between HTL thickness and electron tunneling probability. Calculations revealed that increasing the HTL thickness by approximately 3 nm effectively shields against tunneling. This optimized, ultra-thin HTL design paves the way for PeLEDs operating at low voltages with state-of-the-art optical performance. ...
In this thesis, we established the first operational PeLEDs within the PVMD group, leveraging its perovskite solar cell production line. We developed the fabrication process from the ground up and characterized the resulting device performance.
The first part of this thesis addresses the stability of perovskite layers during optical testing in ambient air. We observed that carrier lifetime measurements depend heavily on the perovskite's exposure time to air and the presence of protective overlayers, rather than solely on its inherent optoelectronic properties. This instability arises from rapid perovskite degradation in air. To mitigate this, we employed spin coating to deposit a protective PMMA layer over the perovskite and optimized this coating process. Characterization confirmed that PMMA significantly slows degradation. Additionally, we identified and corrected alignment issues in the photoluminescence quantum yield (PLQY) measurement setup, which had introduced substantial uncertainty. We refined the PLQY testing procedure to enhance result reliability.
The second part focuses on developing a quasi-2D perovskite emissive layer (EML) with low bulk defect and superior optical properties. Based on quasi-2D perovskites (PEA2(FAPbBr3)n−1PbBr4) typically exhibit better emission characteristics than bulk counterpart (FAPbBr3) We first confirmed the phase composition of our synthesized perovskite, verifying the formation of quasi-2D perovskite with the targeted phase distribution (n = 3). We then introduced two additives: [2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid (2PACz) and KBr to enhance the optoelectronic property of EML. Photoluminescence (PL) testing revealed that 2PACz significantly enhances PL intensity, while KBr showed no such effect. Subsequently, we applied different antisolvents to improve perovskite film morphology. Results demonstrated that ethyl acetate yielded the highest PLQY. Our champion quasi-2D perovskite sample achieved a PLQY of up to 49\%.
The third part details the development and characterization of carrier transport layers for PeLEDs. For the electron transport layer (ETL), we employed 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) and used simulations to study how its thickness affects optical performance. Simulations indicated negligible performance variation for TPBi thicknesses between 40 nm and 80 nm. For the hole transport layer (HTL), we fabricated a self-assembled monolayer (SAM) HTL using [2-(3,6-Dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic Acid (MeO-2PACz) and [4-(3,6-Dimethoxy-9H-carbazol-9-yl)butyl]phosphonic Acid (MeO-4PACz), which could reduce interfacial defect at HTL/ETL interface. However, devices with this SAM-HTL structure didn't emit light during voltage sweeps and exhibiting low turn-on voltages in J-V characteristic. We attribute this to electrical breakdown caused by electron tunneling through the extremely thin (1-2 nm) SAM layer. To suppress tunneling, we introduced an underlying NiO$_{x}$ layer. This modified structure demonstrated to be successfully prevented tunneling and enabled functional PeLEDs. To further optimize hole transport while minimizing thickness, we modeled the relationship between HTL thickness and electron tunneling probability. Calculations revealed that increasing the HTL thickness by approximately 3 nm effectively shields against tunneling. This optimized, ultra-thin HTL design paves the way for PeLEDs operating at low voltages with state-of-the-art optical performance.
Optimization of thermoelectric Si-Ge
Doping optimization of nanostructured Si80Ge20Bx for radioisotope thermoelectric generators
To optimize the properties of silicon-germanium we studied the effect of doping concentration and processing parameters on the microstructure and properties of boron-doped Si80Ge20 produced by arc melting, ball milling and spark plasma sintering. The thermal conductivity was estimated with a model. The electrical conductivity and Seebeck coefficient were measured.
Some conclusions from this work are that the current production process can be used to produce nanostructured Si80Ge20Bx with a crystallite size of 50-100 nm. This material reaches a maximum, but not necessarily optimal, doping concentration when x=1 due to limited solubility. The material suffers from grain growth when exposed to high temperatures for several days. The use of iron in the ball milling process significantly affected the microstructure and properties. ...
To optimize the properties of silicon-germanium we studied the effect of doping concentration and processing parameters on the microstructure and properties of boron-doped Si80Ge20 produced by arc melting, ball milling and spark plasma sintering. The thermal conductivity was estimated with a model. The electrical conductivity and Seebeck coefficient were measured.
Some conclusions from this work are that the current production process can be used to produce nanostructured Si80Ge20Bx with a crystallite size of 50-100 nm. This material reaches a maximum, but not necessarily optimal, doping concentration when x=1 due to limited solubility. The material suffers from grain growth when exposed to high temperatures for several days. The use of iron in the ball milling process significantly affected the microstructure and properties.
Hydrogen Embrittlement Susceptibility of Ferritic High Strength Steels
An Experimental Approach
ductility. Secondly, Dual Phase (DP) steels with varying amounts ofmartensite in a ferrite content, since these steels are the most widely used in the automotive sector.
This research begins by subjecting nano-precipitate strengthened steels to annealing treatments designed to achieve two distinct precipitate size distributions. A 2 hour heat treatment leads to precipitates of around 10 nm in size, that grow to more than 10 nm after 20 hours. Heat treatments are performed in either N2 or H2 gas in order to provide both a reference steel as well as one that charges the precipitates with hydrogen. After hydrogen contents were measured using Thermal Desorption Spectroscopy (TDS), the hydrogen gas is found to predominantly charge large incoherent precipitates with hydrogen.
These precipitates of sizes larger than 100 nm are present in themicrostructure from the steelmaking process. Smaller (semi-)coherent carbides with sizes on the order of 10 nmare not observed to contain hydrogen after the treatment. Hydrogen trapped in incoherent precipitates is trapped irreversibly in carbon vacancies inside the precipitate bulk, meaning that it does not diffuse throughout the steel. The activation energies could only be determined for TiC precipitates, which range from69 kJ/mol to 115 kJ/mol. This type of trapping inhibits accumulation of hydrogen at critical areas such as crack tips, which means that no HE is observed in these specimens. Secondary Ion Mass Spectrometry was performed to visualise hydrogen trapped in the incoherent precipitates. Hydrogen in the TiC precipitates is primarily stored at the interface with the matrix, whereas in VC
precipitates it is distributed throughout the entire bulk. This is explained as an effect of a higher C-vacancy concentration in VC..... ...
ductility. Secondly, Dual Phase (DP) steels with varying amounts ofmartensite in a ferrite content, since these steels are the most widely used in the automotive sector.
This research begins by subjecting nano-precipitate strengthened steels to annealing treatments designed to achieve two distinct precipitate size distributions. A 2 hour heat treatment leads to precipitates of around 10 nm in size, that grow to more than 10 nm after 20 hours. Heat treatments are performed in either N2 or H2 gas in order to provide both a reference steel as well as one that charges the precipitates with hydrogen. After hydrogen contents were measured using Thermal Desorption Spectroscopy (TDS), the hydrogen gas is found to predominantly charge large incoherent precipitates with hydrogen.
These precipitates of sizes larger than 100 nm are present in themicrostructure from the steelmaking process. Smaller (semi-)coherent carbides with sizes on the order of 10 nmare not observed to contain hydrogen after the treatment. Hydrogen trapped in incoherent precipitates is trapped irreversibly in carbon vacancies inside the precipitate bulk, meaning that it does not diffuse throughout the steel. The activation energies could only be determined for TiC precipitates, which range from69 kJ/mol to 115 kJ/mol. This type of trapping inhibits accumulation of hydrogen at critical areas such as crack tips, which means that no HE is observed in these specimens. Secondary Ion Mass Spectrometry was performed to visualise hydrogen trapped in the incoherent precipitates. Hydrogen in the TiC precipitates is primarily stored at the interface with the matrix, whereas in VC
precipitates it is distributed throughout the entire bulk. This is explained as an effect of a higher C-vacancy concentration in VC.....
Indium tin oxide (ITO) currently delivers the best trade off, thus is the most commonly applied TCO.
In this thesis study, candidate TCO materials were deposited and analysed in order to surpass the opto-electrical properties of ITO. In addition to depositing ITO, hydrogen doped indium oxide (IOH) and intrinsic zinc oxide (i-ZnO) thin films were deposited using RF magnetron sputtering. Substrate temperature, RF power, deposition time and H2O partial pressure (only for IOH) were the varied parameters during depositions. IOH was found to surpass ITO in terms of conductivity, while i-ZnO surpassed ITO in terms of transparency. The best performing IOH and i-ZnO samples with regard to their respective superior parameters were chosen to be combined.
A TCO bi-layer was constructed by stacking a i-ZnO layer on top of a IOH layer. The IOH layer ensures good lateral conductivity, while the i-ZnO layer secures minimized parasitic absorption in the near infrared region. After being subjected to post deposition annealing, the bi-layer displayed opto-electrical properties superior to that of the individual i-ZnO and IOH layers. The highest electron mobility achieved for the bi-layer was 103,70 cm^2 /Vs with a carrier density of 0,3*1020 carriers/cm^3. The working principle is the capping effect which i-ZnO has on IOH, keeping hydrogen contained within the bilayer during annealing. Further investigation will lead to additional information on the behaviour of hydrogen within the as deposited bi-layer in comparison to the annealed
one. ...
Indium tin oxide (ITO) currently delivers the best trade off, thus is the most commonly applied TCO.
In this thesis study, candidate TCO materials were deposited and analysed in order to surpass the opto-electrical properties of ITO. In addition to depositing ITO, hydrogen doped indium oxide (IOH) and intrinsic zinc oxide (i-ZnO) thin films were deposited using RF magnetron sputtering. Substrate temperature, RF power, deposition time and H2O partial pressure (only for IOH) were the varied parameters during depositions. IOH was found to surpass ITO in terms of conductivity, while i-ZnO surpassed ITO in terms of transparency. The best performing IOH and i-ZnO samples with regard to their respective superior parameters were chosen to be combined.
A TCO bi-layer was constructed by stacking a i-ZnO layer on top of a IOH layer. The IOH layer ensures good lateral conductivity, while the i-ZnO layer secures minimized parasitic absorption in the near infrared region. After being subjected to post deposition annealing, the bi-layer displayed opto-electrical properties superior to that of the individual i-ZnO and IOH layers. The highest electron mobility achieved for the bi-layer was 103,70 cm^2 /Vs with a carrier density of 0,3*1020 carriers/cm^3. The working principle is the capping effect which i-ZnO has on IOH, keeping hydrogen contained within the bilayer during annealing. Further investigation will lead to additional information on the behaviour of hydrogen within the as deposited bi-layer in comparison to the annealed
one.
Experimental investigation on low-temperature electrical resistivity of silver thin films
The effects of fabrication, design, purity and storage
Therefore, this project investigates hydrogen diffusivity in equimolar TiVZrHfNb and the influence of hydrogen concentration on hydrogen diffusivity to gain better understanding of hydrogenation kinetics. The selected HEA has been found to absorb the highest amount of hydrogen (2.5 H/M) among other HEAs.
The investigation was done by a computational approach using ab initio molecular dynamics. BCC and face-centered cubic (FCC) supercells with different hydrogen concentrations (H/M = 0.2, 0.8, 1.4, 2, 2.4) were simulated at a temperature range of 773 – 973 K. At the same time, experimental electrochemical hydrogen charging using chronoamperometry and cyclic voltammetry was performed in order to compare computational and experimental values of hydrogen diffusivity.
The electrochemical hydrogen charging did not result in hydrogen absorption, most probably due to the passivation of the sample surface.
From the simulation results, the values of activation energy and pre-exponential factor were estimated to be in the range of 0.26 – 0.48 eV and 0.73 – 2.95 x 10-7 m2/s, respectively. Hydrogen diffusivity was found to be higher in BCC than in FCC. In BCC the hydrogen diffusivity slowly decreases linearly with increasing H/M. In the case of FCC, the hydrogen diffusivity was found to be the highest at 2.4 H/M while at 2 H/M the diffusivity was the lowest. The analysis of hydrogen occupation at 2 H/M shows that most of the hydrogen atoms are trapped inside tetrahedral sites. It is possible that the hydrogen occupation in the tetrahedral sites results in the optimum hydrogen distribution where the repulsive interaction between hydrogen atoms is the lowest. At concentrations above 2 H/M, an additional repulsive force between hydrogen atoms seems to contribute to the increase of hydrogen diffusivity. ...
Therefore, this project investigates hydrogen diffusivity in equimolar TiVZrHfNb and the influence of hydrogen concentration on hydrogen diffusivity to gain better understanding of hydrogenation kinetics. The selected HEA has been found to absorb the highest amount of hydrogen (2.5 H/M) among other HEAs.
The investigation was done by a computational approach using ab initio molecular dynamics. BCC and face-centered cubic (FCC) supercells with different hydrogen concentrations (H/M = 0.2, 0.8, 1.4, 2, 2.4) were simulated at a temperature range of 773 – 973 K. At the same time, experimental electrochemical hydrogen charging using chronoamperometry and cyclic voltammetry was performed in order to compare computational and experimental values of hydrogen diffusivity.
The electrochemical hydrogen charging did not result in hydrogen absorption, most probably due to the passivation of the sample surface.
From the simulation results, the values of activation energy and pre-exponential factor were estimated to be in the range of 0.26 – 0.48 eV and 0.73 – 2.95 x 10-7 m2/s, respectively. Hydrogen diffusivity was found to be higher in BCC than in FCC. In BCC the hydrogen diffusivity slowly decreases linearly with increasing H/M. In the case of FCC, the hydrogen diffusivity was found to be the highest at 2.4 H/M while at 2 H/M the diffusivity was the lowest. The analysis of hydrogen occupation at 2 H/M shows that most of the hydrogen atoms are trapped inside tetrahedral sites. It is possible that the hydrogen occupation in the tetrahedral sites results in the optimum hydrogen distribution where the repulsive interaction between hydrogen atoms is the lowest. At concentrations above 2 H/M, an additional repulsive force between hydrogen atoms seems to contribute to the increase of hydrogen diffusivity.
In this thesis particular interest has been focused on the stability of a series of magnetron sputtered Pd thin films of different nanostructures i.e., non-voided compact and nano-voided open columnar morphology. The X-ray diffraction (XRD) analysis methods are advanced, utilizing the tailored microstructures of the Pd films suitable to investigate the interplay between microstructure and hydrogenation properties of Pd-based thin films. Interpretation of the stress state and microstructural changes during hydrogen cycling are studied utilizing XRD line-profile analysis and the deformation mechanisms are systematically discussed. The change in dislocation density by the generation and annihilation of dislocations at interfaces reflects the difference in film-substrate interaction. The insertion of an intermediate layer between the Pd film and a rigid substrate can prevent buckle-delamination that is caused by the large volume expansion due to hydrogen absorption but it also changes the hydrogen absorption performance. The different effects on the absorption properties in the case of compliant (polyimide) and rigid (titanium) intermediate layers are illustrated. The results of this work showed that the strong clamping usually suppresses or reduces hydrogen absorption, whereas, the flexible layer enhances the lifetime of Pd thin films when exposed to prolonged hydrogen during cycling. The research in this thesis deepens the understanding about an appropriate combination of film microstructure and choice of the intermediate layer to strengthen Pd-based thin films.
...
In this thesis particular interest has been focused on the stability of a series of magnetron sputtered Pd thin films of different nanostructures i.e., non-voided compact and nano-voided open columnar morphology. The X-ray diffraction (XRD) analysis methods are advanced, utilizing the tailored microstructures of the Pd films suitable to investigate the interplay between microstructure and hydrogenation properties of Pd-based thin films. Interpretation of the stress state and microstructural changes during hydrogen cycling are studied utilizing XRD line-profile analysis and the deformation mechanisms are systematically discussed. The change in dislocation density by the generation and annihilation of dislocations at interfaces reflects the difference in film-substrate interaction. The insertion of an intermediate layer between the Pd film and a rigid substrate can prevent buckle-delamination that is caused by the large volume expansion due to hydrogen absorption but it also changes the hydrogen absorption performance. The different effects on the absorption properties in the case of compliant (polyimide) and rigid (titanium) intermediate layers are illustrated. The results of this work showed that the strong clamping usually suppresses or reduces hydrogen absorption, whereas, the flexible layer enhances the lifetime of Pd thin films when exposed to prolonged hydrogen during cycling. The research in this thesis deepens the understanding about an appropriate combination of film microstructure and choice of the intermediate layer to strengthen Pd-based thin films.
Firstly, RF-PECVD deposition conditions of a (i)a-Si: H monolayer for symmetric <100> flat c-Si surfaces were optimized. The optimized (i)a-Si:H monolayer ( 10-nm-thick) was obtained using pure SiH4, which results in rather moderate passivation performances (teff = 1.2ms, i-VOC = 701 mV).
To improve further the passivation quality of monolayer (i)a-Si:H on flat <100> surface, other passivation approaches aiming at incorporating more H without promoting detrimental epitaxial growth have been investigated.
With a bilayer deposition approach, which features firstly a less H-containing (i)a-Si:H to prevent epitaxial growth and then a second H-rich (i)a-Si:H layer, the passivation properties were slightly enhanced to τeff=1.4 ms and i-VOC=704 mV. Subsequently, by combining the bilayer approach with a post HPT, τeff of 2.0
ms and an i-VOC of 714 mV were achieved. Finally, by combining the bilayer approach with an intermediate HPT, the optimal passivation sample was deposited, with τeff of 2.4 ms and an i-VOC of 720 mV on the flat <100> surface.
To gain a better understanding of the correlation between passivation qualities and the microstructure properties of (i)a-Si:H on flat <100> surface, the layers have been characterized mainly via Fourier-transform infrared spectroscopy (FTIR). From the analysis, it can be concluded that the passivation layer that contains
sufficient H and a higher fraction of monohydrides is beneficial for achieving a better passivation quality.
For the two-terminal tandem solar cells, bottom cells with (n)-contact on top are preferred due to the optical advantage of the perovskite top cells with the p-i-n configuration. Therefore, a first tandem cell with (n)a-Si:H has been fabricated in collaboration with TU Eindhoven resulting in 22.2% efficiency. Starting from
this first fabricated tandem cell, its main optical limitations have been identified by performing advanced optical simulations using GenPro4, and the main strategies to overcome these optical drawbacks have been defined. By optimizing the front anti-reflection layers (MgF2 and ITO) thicknesses (at 100 nm and 20 nm, respectively), and reducing C60 thickness from 20 to 10 nm, front reflections, and parasitic absorption can be minimized. Thus a gain of implied photocurrent density of 1.8 mA/cm2 for the tandem cell was obtained.
Further, by implementing (n)nc-SiOx:H doped layer in the SHJ bottom cell, instead of standard (n)a-Si:H layer the reflection between the top and bottom cell is also reduced, and enhanced light incorporation into the bottom cell is obtained. By adopting all the above optimizations and also adjusting the perovskite
layer from 473 nm to 530 nm, a total improvement of 2.7 mA/cm2 in implied photocurrent density with respect to the initial 22.2% tandem cell can be achieved.
After having identified different optically optimized SHJ bottom cells for tandem applications, both rear junction and front junction single-side-textured SHJ solar cells were fabricated. Firstly, the passivation quality of (i)a-Si:H/(n)-layer and (i)a-Si:H/(p)-layer on different (i)a-Si:H were investigated. Then RJ solar cells
with three different (n)-type layers [(n)nc-SiOx:H;(n)nc-Si:H;(n)a-Si:H)] have been fabricated with optimal thicknesses individuated from the tandem optical simulations. Furthermore, a tunnel recombination junction SHJ solar cell with a layer stack of (n)nc-Si:H/(p)nc-SiOx:H/(p)nc-Si:H has been fabricated and measured as well.
In conclusion, various doped contacts (both n- and p-type) were successfully implemented into SHJ solar cells, which delivered VOCs range from 700 to 714 mV and FFs range from 77.8% to 80.9%. Therefore, different well-functioning SHJ solar cells have been developed and are ready to be implemented as bottom cells for high-efficiency tandem devices. ...
Firstly, RF-PECVD deposition conditions of a (i)a-Si: H monolayer for symmetric <100> flat c-Si surfaces were optimized. The optimized (i)a-Si:H monolayer ( 10-nm-thick) was obtained using pure SiH4, which results in rather moderate passivation performances (teff = 1.2ms, i-VOC = 701 mV).
To improve further the passivation quality of monolayer (i)a-Si:H on flat <100> surface, other passivation approaches aiming at incorporating more H without promoting detrimental epitaxial growth have been investigated.
With a bilayer deposition approach, which features firstly a less H-containing (i)a-Si:H to prevent epitaxial growth and then a second H-rich (i)a-Si:H layer, the passivation properties were slightly enhanced to τeff=1.4 ms and i-VOC=704 mV. Subsequently, by combining the bilayer approach with a post HPT, τeff of 2.0
ms and an i-VOC of 714 mV were achieved. Finally, by combining the bilayer approach with an intermediate HPT, the optimal passivation sample was deposited, with τeff of 2.4 ms and an i-VOC of 720 mV on the flat <100> surface.
To gain a better understanding of the correlation between passivation qualities and the microstructure properties of (i)a-Si:H on flat <100> surface, the layers have been characterized mainly via Fourier-transform infrared spectroscopy (FTIR). From the analysis, it can be concluded that the passivation layer that contains
sufficient H and a higher fraction of monohydrides is beneficial for achieving a better passivation quality.
For the two-terminal tandem solar cells, bottom cells with (n)-contact on top are preferred due to the optical advantage of the perovskite top cells with the p-i-n configuration. Therefore, a first tandem cell with (n)a-Si:H has been fabricated in collaboration with TU Eindhoven resulting in 22.2% efficiency. Starting from
this first fabricated tandem cell, its main optical limitations have been identified by performing advanced optical simulations using GenPro4, and the main strategies to overcome these optical drawbacks have been defined. By optimizing the front anti-reflection layers (MgF2 and ITO) thicknesses (at 100 nm and 20 nm, respectively), and reducing C60 thickness from 20 to 10 nm, front reflections, and parasitic absorption can be minimized. Thus a gain of implied photocurrent density of 1.8 mA/cm2 for the tandem cell was obtained.
Further, by implementing (n)nc-SiOx:H doped layer in the SHJ bottom cell, instead of standard (n)a-Si:H layer the reflection between the top and bottom cell is also reduced, and enhanced light incorporation into the bottom cell is obtained. By adopting all the above optimizations and also adjusting the perovskite
layer from 473 nm to 530 nm, a total improvement of 2.7 mA/cm2 in implied photocurrent density with respect to the initial 22.2% tandem cell can be achieved.
After having identified different optically optimized SHJ bottom cells for tandem applications, both rear junction and front junction single-side-textured SHJ solar cells were fabricated. Firstly, the passivation quality of (i)a-Si:H/(n)-layer and (i)a-Si:H/(p)-layer on different (i)a-Si:H were investigated. Then RJ solar cells
with three different (n)-type layers [(n)nc-SiOx:H;(n)nc-Si:H;(n)a-Si:H)] have been fabricated with optimal thicknesses individuated from the tandem optical simulations. Furthermore, a tunnel recombination junction SHJ solar cell with a layer stack of (n)nc-Si:H/(p)nc-SiOx:H/(p)nc-Si:H has been fabricated and measured as well.
In conclusion, various doped contacts (both n- and p-type) were successfully implemented into SHJ solar cells, which delivered VOCs range from 700 to 714 mV and FFs range from 77.8% to 80.9%. Therefore, different well-functioning SHJ solar cells have been developed and are ready to be implemented as bottom cells for high-efficiency tandem devices.
Surface segregation in Pd-based ternary alloys
Modelling surface segregation in ternary alloys using Miedema’s model and Monte Carlo Simulations
The formation of worm-like defects involves a moving hot-spot across the cell. The exact mechanisms involved in the movement of a hot-spot is unknown. The problem in studying the mechanisms present in these hot-spots is an unknown current density and temperature. After rapid formation of worm-like defects severe changes in the solar cell are observed.
This work expands the knowledge on changes in geometry, composition and crystal structure after worm-like defect formation. X-ray diffraction results shows crystal structure of CIGS below worm-like defects has not changed. Energy dispersive X-ray results showCu rich areas near the back contact and areaswith high Ga and O content near the transparent conductive oxide. A band outside the worm-like defects is observed where Se is exchanged with S while Cu, In or Ga is exchanged with Cd.
Furthermore, a new experimental method is presented that allows control over locally applied conditions. The new method shows applied conditions can be controlled inducing features while resistive heating is suppressed.This enables future research on involved mechanisms.
Based on experimental results multiple possible mechanisms are proposed. In the authors view a plausible and major mechanism is electromigration of Cu towards the back contact. This migration is enhanced by the electromagnetic field and elevated temperature. Cu migration initiates a phase transformation of CIGS into a Cu rich and Cu poor phase. Subsequent to this phase transformation is a reaction of Ga and O. Further testing with this method is needed to investigate in which order mechanisms occur during worm-like defect formation. ...
The formation of worm-like defects involves a moving hot-spot across the cell. The exact mechanisms involved in the movement of a hot-spot is unknown. The problem in studying the mechanisms present in these hot-spots is an unknown current density and temperature. After rapid formation of worm-like defects severe changes in the solar cell are observed.
This work expands the knowledge on changes in geometry, composition and crystal structure after worm-like defect formation. X-ray diffraction results shows crystal structure of CIGS below worm-like defects has not changed. Energy dispersive X-ray results showCu rich areas near the back contact and areaswith high Ga and O content near the transparent conductive oxide. A band outside the worm-like defects is observed where Se is exchanged with S while Cu, In or Ga is exchanged with Cd.
Furthermore, a new experimental method is presented that allows control over locally applied conditions. The new method shows applied conditions can be controlled inducing features while resistive heating is suppressed.This enables future research on involved mechanisms.
Based on experimental results multiple possible mechanisms are proposed. In the authors view a plausible and major mechanism is electromigration of Cu towards the back contact. This migration is enhanced by the electromagnetic field and elevated temperature. Cu migration initiates a phase transformation of CIGS into a Cu rich and Cu poor phase. Subsequent to this phase transformation is a reaction of Ga and O. Further testing with this method is needed to investigate in which order mechanisms occur during worm-like defect formation.
How long will it last?
An assessment of the useful life of plastics for the encapsulation of an alkaline electrolyser
Study of Hydrogen Sorption/Desorption Effect on Austenitic Iron-Based Alloys
Surface Interaction Studied by Cyclic Voltammetry on 304L Stainless Steel and Invar
The aim of this project was to test regimes simulating steady state operation and high frequency and temperature transient pulses called ELMs (Edge Localized Modes) striking the divertor. Recent research has shown that the degradation and behavior of tungsten under these transient conditions does not consistently follow the expected parameters characterized in the literature. According to it, recrystallization, grain growth, and crack formation seem to be suppressed by the plasma loading under these regimes, thus a new understanding of the material behavior for these circumstances must be developed. To do this, ITER grade tungsten samples were subjected to a hydrogen plasma beam at DIFFER’s Magnum-PSI with temperatures at the strike point ranging from ~1000 to ~1500 °C and high frequency pulses that increased the surface temperature by ~200 to ~300 °C above the steady state temperature. The surface thermal shock response to the plasma pulses was characterized by means of infrared and pyrometer readings at the samples’ surface during exposure. Temperature and power density calculations were correlated with identified damage morphologies on the targets and a damage map for the experiments was elaborated, which showed that the most severe damage (cracks and crack networks) begin to appear in the range of the measured recrystallization temperature of the samples, which was lower than expected.
Using Vickers hardness, the recovery and recrystallization kinetics of the material were characterized by means of logarithmic decay and a modified version of JMAK recrystallization kinetics that includes an incubation time for the onset of recrystallization. Recrystallization kinetics were found to accelerate as the hydrogen exposure progresses, thus yielding lower effective activation energies for recrystallization when comparing furnace one hour exposures, plasma one hour exposures, and plasma four hour exposures. This pointed to the presence of hydrogen actively reducing the activation energy for self-diffusion. Simulations of hydrogen diffusion were performed to test this hypothesis, and even though the total concentration is low, given that the high experimental temperature does not permit trapping of the hydrogen, the diffusing atoms may still play a role in accelerating the recrystallization kinetics.
Based on the results of this research, it is proposed that interstitially diffusing hydrogen segregating to voids or grain boundaries is modifying the behavior of surrounding tungsten crystal lattice. Specifically, the mobility of the grain boundaries may be increasing because the hydrogen’s presence would be promoting the creation of ledges in the grain boundary resulting in an overall free energy reduction for grain boundary diffusion. This localized defect formation would require a lower concentration of hydrogen than that required for solute drag or other suppression mechanisms, and might be mechanism behind the behavior observed in this work’s experiments. ...
The aim of this project was to test regimes simulating steady state operation and high frequency and temperature transient pulses called ELMs (Edge Localized Modes) striking the divertor. Recent research has shown that the degradation and behavior of tungsten under these transient conditions does not consistently follow the expected parameters characterized in the literature. According to it, recrystallization, grain growth, and crack formation seem to be suppressed by the plasma loading under these regimes, thus a new understanding of the material behavior for these circumstances must be developed. To do this, ITER grade tungsten samples were subjected to a hydrogen plasma beam at DIFFER’s Magnum-PSI with temperatures at the strike point ranging from ~1000 to ~1500 °C and high frequency pulses that increased the surface temperature by ~200 to ~300 °C above the steady state temperature. The surface thermal shock response to the plasma pulses was characterized by means of infrared and pyrometer readings at the samples’ surface during exposure. Temperature and power density calculations were correlated with identified damage morphologies on the targets and a damage map for the experiments was elaborated, which showed that the most severe damage (cracks and crack networks) begin to appear in the range of the measured recrystallization temperature of the samples, which was lower than expected.
Using Vickers hardness, the recovery and recrystallization kinetics of the material were characterized by means of logarithmic decay and a modified version of JMAK recrystallization kinetics that includes an incubation time for the onset of recrystallization. Recrystallization kinetics were found to accelerate as the hydrogen exposure progresses, thus yielding lower effective activation energies for recrystallization when comparing furnace one hour exposures, plasma one hour exposures, and plasma four hour exposures. This pointed to the presence of hydrogen actively reducing the activation energy for self-diffusion. Simulations of hydrogen diffusion were performed to test this hypothesis, and even though the total concentration is low, given that the high experimental temperature does not permit trapping of the hydrogen, the diffusing atoms may still play a role in accelerating the recrystallization kinetics.
Based on the results of this research, it is proposed that interstitially diffusing hydrogen segregating to voids or grain boundaries is modifying the behavior of surrounding tungsten crystal lattice. Specifically, the mobility of the grain boundaries may be increasing because the hydrogen’s presence would be promoting the creation of ledges in the grain boundary resulting in an overall free energy reduction for grain boundary diffusion. This localized defect formation would require a lower concentration of hydrogen than that required for solute drag or other suppression mechanisms, and might be mechanism behind the behavior observed in this work’s experiments.
Modelling of Grain Boundary Segregation for Nanocrystalline Alloys
Applied to Pd-based Alloys