Continuous Class F (CCF) power amplifiers (PAs) overcome Class-F PA's disadvantage of narrow bandwidth by relaxing the short-circuit requirement at the 2^nd harmonic while still maintaining 90.7% peak efficiency over the band of interest. This paper proposes four different CCF output networks, with their design procedure, suitable for on-chip implementation in the 2.1-2.7GHz band. The output stage with 2^nd harmonic trap and no RF choke is favoured due to its flat real impedance, low fundamental reactance, and compact layout. Using a 40nm CMOS process, a passive efficiency of 68% at 2.4GHz for this structure is in reach.

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A linearization technique for bipolar amplifiers based on Derivative Superposition is presented. The proposed technique provides excellent linearity, while having low sensitivity on the bias conditions. A demonstrator circuit, along with a reference circuit using out-of-band linearization for linearity comparison, have been designed and implemented in a 0:25μm SiGe:C BiCMOS technology to show the effectiveness of the proposed approach. Measured results show a significant IM3 improvement up to compression compared to the reference circuit.@en