R. P. Griessen
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In many experimental investigations of thermodynamic equilibrium or kinetic properties of series of similar reactions it is found that the enthalpies and entropies derived from Van ′t Hoff or Arrhenius plots exhibit a strong linear correlation. The origin of this Enthalpy-Entropy compensation, which is strongly related to the coalescence tendency of Van ′t Hoff or Arrhenius plots, is not necessarily due to a physical/chemical/biological process. It can also be a merely statistical artefact. A new method, called Combined K-CQF makes it possible both to quantify the degree of coalescence of experimental Van ‘t Hoff lines and to verify whether or not the Enthalpy-Entropy Compensation is of a statistical origin at a desired confidence level. The method is universal and can handle data sets with any degree of coalescence of Van ‘t Hoff (or Arrhenius) plots. The new method requires only a standard least square fit of the enthalpyΔH versus entropy ΔS plot to determine the two essential dimensionless parameters K and CQF. The parameter K indicates the position (in inverse temperature) of the coalescence region of Van ‘t Hoff plots and CQF is a quantitative measure of the smallest spread of the Van ‘t Hoff plots. The position of the (K, CQF) couple with respect to universal confidence contours determined from a large number of simulations of random Van ‘t Hoff plots indicates straightforwardly whether or not the ΔH-ΔS compensation is a statistical artefact.
Enthalpy-entropy compensation (EEC) is very often encountered in chemistry, biology and physics. Its origin is widely discussed since it would allow, for example, a very accurate tuning of the thermodynamic properties as a function of the reactants. However, EEC is often discarded as a statistical artefact, especially when only a limited temperature range is considered. We show that the likeliness of a statistical origin of an EEC can be established with a compensation quality factor (CQF) that depends only on the measured enthalpies and entropies and the experimental temperature range. This is directly derived from a comparison of the CQF with threshold values obtained from a large number of simulations with randomly generated Van ‘t Hoff plots. The value of CQF is furthermore a direct measure of the existence of a genuine isoequilibrium or isokinetic relationship.
Magnesium thin films covered with a layer of Pd absorb hydrogen at much higher pressures than bulk Mg. Such an effect was originally explained as a consequence of elastic clamping on Mg by the capping Pd layer. An alternative interpretation later suggested that the pressure increase could originate from simple alloying between Mg and Pd. Here we resolve this controversy by measuring the hydrogenation and dehydrogenation isotherms of Mg-Pd thin film alloys over a wide range of compositions. Our results disentangle the effects of elastic clamping and alloying and highlight the role of plastic deformations.
Hydrogenography of PdHx thin films
Influence of H-induced stress relaxation processes
A multisite lattice gas approach is used to model pressure-optical- transmission isotherms (PTIs) recorded by hydrogenography on Mgy Ti1-y Hx sputtered thin films. The model reproduces the measured PTIs well and allows us to determine the chemical short-range order parameter s. The s values are in good agreement with those determined from extended x-ray absorption fine structure measurements. Additionally, the PTI multisite modeling yields a parameter L that accounts for the local lattice deformations with respect to the average Mgy Ti1-y lattice given by Vegard's law. It is thus possible to extract two essential characteristics of a metastable alloy from hydrogenographic data.
The metallic Mg grains cause an optical absorption edge at 2.0 eV, which has a completely different origin than the observed band gap of MgH2 at 5.6 eV. The observed optical spectra can be modelled using an effective medium theory. The Mg hydride films are electrically insulating despite the presence of metallic Mg particles. Upon re-hydrogenation of a de-hydrogenated in-situ grown MgHx thin film, the absorption edge at 2.0 eV disappears and the resistivity decreases to values normally observed for ex-situ hydrogenated films. ...
The metallic Mg grains cause an optical absorption edge at 2.0 eV, which has a completely different origin than the observed band gap of MgH2 at 5.6 eV. The observed optical spectra can be modelled using an effective medium theory. The Mg hydride films are electrically insulating despite the presence of metallic Mg particles. Upon re-hydrogenation of a de-hydrogenated in-situ grown MgHx thin film, the absorption edge at 2.0 eV disappears and the resistivity decreases to values normally observed for ex-situ hydrogenated films.
Mgy Ni (2 ≤ y ≤ 10) thin films covered with a Pd cap layer are hydrogenated in 1 05 Pa H2 between room temperature and 80 ° C and their dielectric function over(ε, ̃) is determined from reflection and transmission measurements. The hydrogenated Mgy NiHx thin films show a continuous shift of the optical absorption towards higher photon energies with increasing y. Comparison of the obtained dielectric functions with predictions from an effective medium theory show that a considerable doping of the Mg2 NiH4 host takes place at least for y ≤ 3.5 while no signature of MgH2 is observed in that composition range in the optical spectra. This is in contrast to the predictions from the bulk phase diagram where a mixture of semiconducting Mg2 NiH4 (energy gap Eg = 1.6 eV) and MgH2 (Eg = 5.6 eV) is expected.