T.J. Savenije
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12 records found
1
Relationship Between Structural and Optoelectronic Properties in Mixed Sn-Pb Halide Perovskites
Controlling Doping, Crystal Defects, and Phonon-Induced Disorder for Efficient Solar Cells
...
Potential for light emission
Investigations into quantum dots as phosphors and in light-emitting electrochemical cells
properties that makes them useful for application in various light-emitting devices, such
as LEDs, displays and lasers. For actual application of QDs, energy efficiency of their light
emission and material stability are crucial. To achieve high energy efficiency, it must be
understood which types of atomic defects on the nanocrystals lead to energy losses and
how to prevent them. To achieve stable QDs, it is important to understand which kinds of
chemical reactions the QDs can undergo, if these reactions lead to the formation of new
defects and how to prevent this... ...
properties that makes them useful for application in various light-emitting devices, such
as LEDs, displays and lasers. For actual application of QDs, energy efficiency of their light
emission and material stability are crucial. To achieve high energy efficiency, it must be
understood which types of atomic defects on the nanocrystals lead to energy losses and
how to prevent them. To achieve stable QDs, it is important to understand which kinds of
chemical reactions the QDs can undergo, if these reactions lead to the formation of new
defects and how to prevent this...
Additive-Free Near-Intrinsic Narrow Band Gap Perovskites via Sequential Thermal Evaporation
For Photovoltaic Applications
This study introduces sequential thermal evaporation (STE) as a scalable method for producing narrow band gap Sn/Pb iodide PVK absorber layers for application in solar cells. The produced thin films show low doping densities, charge carrier mobilities close to 100 cm2/Vs, and charge carrier lifetimes of over 2 μs. Contrary to the established convention in solvent-based synthesis, no additives were required.
An alloy of precursors (PbSnI4) was used in the deposition, lowering the number of required
sources and increasing the production rate. Optimal annealing temperatures for FAPb0.5Sn0.5I3 and Cs0.05FA0.95Pb0.5Sn0.5I3 produced via STE were determined at 200 ◦C, showing significant improvements in charge carrier mobilities and lifetimes compared to lower annealing temperatures. The drastic increase in performance was ascribed to a recrystallization mechanism. Contrary to spin coating-based research, the introduction of cesium into the PVK structure led to reduced charge carrier mobility and lifetime. The underlying mechanism remains unclear. Addition of tin(II)fluoride (SnF2) led to reduced charge carrier mobilities and lifetimes, with slight improvement in morphology. However, its direct effects were uncertain, questioning its necessity in vacuum deposition methods for Sn-based PVK films.
This works demonstrates the significant potential of STE for the production of near-intrinsic high-performance Sn/Pb iodide PVKs for solar cell applications. ...
This study introduces sequential thermal evaporation (STE) as a scalable method for producing narrow band gap Sn/Pb iodide PVK absorber layers for application in solar cells. The produced thin films show low doping densities, charge carrier mobilities close to 100 cm2/Vs, and charge carrier lifetimes of over 2 μs. Contrary to the established convention in solvent-based synthesis, no additives were required.
An alloy of precursors (PbSnI4) was used in the deposition, lowering the number of required
sources and increasing the production rate. Optimal annealing temperatures for FAPb0.5Sn0.5I3 and Cs0.05FA0.95Pb0.5Sn0.5I3 produced via STE were determined at 200 ◦C, showing significant improvements in charge carrier mobilities and lifetimes compared to lower annealing temperatures. The drastic increase in performance was ascribed to a recrystallization mechanism. Contrary to spin coating-based research, the introduction of cesium into the PVK structure led to reduced charge carrier mobility and lifetime. The underlying mechanism remains unclear. Addition of tin(II)fluoride (SnF2) led to reduced charge carrier mobilities and lifetimes, with slight improvement in morphology. However, its direct effects were uncertain, questioning its necessity in vacuum deposition methods for Sn-based PVK films.
This works demonstrates the significant potential of STE for the production of near-intrinsic high-performance Sn/Pb iodide PVKs for solar cell applications.
Revealing loss and degradation mechanisms in metal halide perovskite solar cells
The role of defects and trap states
An efficient charge extraction by C60 and Spiro-MeOTAD is observed in the absence of bias illumination. Under bias illumination, trap or defect states are created in MAPI. While the charge extraction by the C60 is not affected after the bias illumination, the hole extraction by the Spiro-MeOTAD decreases. Curve fitting of the TRMC traces reveals that a larger number of trap states are created in the MAPI/ Spiro-MeOTAD bi-layer system along with an increase in the interfacial recombination, indicating that bias illumination also creates trap states in the MAPI/ Spiro-MeOTAD interface affecting the charge kinetics. Lastly, TRMC measurements carried out on MAPI/ Spiro-MeOTAD bi-layer system at a low temperature of 200 K show that charge extraction and interfacial recombination are no longer affected by continuous illumination. This indicates that the defect states created in the MAPI- Spiro-MeOTAD interface is possibly due to mobile ions in MAPI which is prevented at the low temperature due to quenching of ion mobility. ...
An efficient charge extraction by C60 and Spiro-MeOTAD is observed in the absence of bias illumination. Under bias illumination, trap or defect states are created in MAPI. While the charge extraction by the C60 is not affected after the bias illumination, the hole extraction by the Spiro-MeOTAD decreases. Curve fitting of the TRMC traces reveals that a larger number of trap states are created in the MAPI/ Spiro-MeOTAD bi-layer system along with an increase in the interfacial recombination, indicating that bias illumination also creates trap states in the MAPI/ Spiro-MeOTAD interface affecting the charge kinetics. Lastly, TRMC measurements carried out on MAPI/ Spiro-MeOTAD bi-layer system at a low temperature of 200 K show that charge extraction and interfacial recombination are no longer affected by continuous illumination. This indicates that the defect states created in the MAPI- Spiro-MeOTAD interface is possibly due to mobile ions in MAPI which is prevented at the low temperature due to quenching of ion mobility.
Exploring the Synthesis and Optoelectronic Properties of Cs2AgSbxBi1-xBr6 Double Perovskites
A Combined Computational and Experimental Study
The synthesis method of the thin films involved mixing all of the precursors in DMSO solvent and spin coating. However, only BiBr3 and SbBr3 were found to dissolve individually in solution, indicating a sequential pathway to double perovskite crystallites in solution. Geometry optimizations of Bi-Br-DMSO complexes were performed via DFT using the BLYP functional, with COSMO used to approximate a solution phase system. While COSMO was found to be incompatible with the corrected method of calculating the interaction energy, the relatively low (~11%) basis set superposition error was accepted and the uncorrected calculation method was used to find the most stable Bi-Br DMSO complexes in solution. These complexes were analyzed using TD-DFT and the CAM-B3LYP functional to simulate absorbance spectra and match them to experimental solution spectra. While one of the transitions at ~3.9 eV may be ascribed to a larger cluster of [Bi4Br20]8-, the source of the stronger experimental transition at ~3.5 eV could not be determined. The dominant electronic transition of the Bi-Br-DMSO system was a metal-to-ligand charge transfer from the 6푠 orbital of the central bismuth ion to the 3푝 orbital of the bromine ligand.
A facile synthesis method reported in literature was attempted for the synthesis of Cs2AgSbxBi1-xBr6 thin films, described briefly above. The method was found to produce thin films of high crystallinity but with a tendency to degrade upon exposure to ambient conditions, as evidenced by x-ray diffraction (XRD) measurements. A reduced annealing temperature of 90°C rather than 250°C led to the successful substitution of Sb3+ for Bi3+ in the double perovksite while simultaneously avoiding material degradation (at the cost of optoelectronic performance). Shifts in the lattice parameter of ~0.05 Å and shifts in the absorbance onset energy of ~0.2 eV were found by XRD and absorbance measurements, respectively, for antimony replacement of up to x = 0.7. The optoelectronic properties of the materials were studied using time-resolved microwave conductivity (TRMC) measurements, and showed a decrease in photoconductance of two orders of magnitude and a reduction of charge carrier lifetime as the annealing temperature was lowered from 250°C to 90°C. Low temperature absorbance measurements combined with TRMC measurements indicated that the peak in the absorbance spectra was most likely the result of an excitonic transition. ...
The synthesis method of the thin films involved mixing all of the precursors in DMSO solvent and spin coating. However, only BiBr3 and SbBr3 were found to dissolve individually in solution, indicating a sequential pathway to double perovskite crystallites in solution. Geometry optimizations of Bi-Br-DMSO complexes were performed via DFT using the BLYP functional, with COSMO used to approximate a solution phase system. While COSMO was found to be incompatible with the corrected method of calculating the interaction energy, the relatively low (~11%) basis set superposition error was accepted and the uncorrected calculation method was used to find the most stable Bi-Br DMSO complexes in solution. These complexes were analyzed using TD-DFT and the CAM-B3LYP functional to simulate absorbance spectra and match them to experimental solution spectra. While one of the transitions at ~3.9 eV may be ascribed to a larger cluster of [Bi4Br20]8-, the source of the stronger experimental transition at ~3.5 eV could not be determined. The dominant electronic transition of the Bi-Br-DMSO system was a metal-to-ligand charge transfer from the 6푠 orbital of the central bismuth ion to the 3푝 orbital of the bromine ligand.
A facile synthesis method reported in literature was attempted for the synthesis of Cs2AgSbxBi1-xBr6 thin films, described briefly above. The method was found to produce thin films of high crystallinity but with a tendency to degrade upon exposure to ambient conditions, as evidenced by x-ray diffraction (XRD) measurements. A reduced annealing temperature of 90°C rather than 250°C led to the successful substitution of Sb3+ for Bi3+ in the double perovksite while simultaneously avoiding material degradation (at the cost of optoelectronic performance). Shifts in the lattice parameter of ~0.05 Å and shifts in the absorbance onset energy of ~0.2 eV were found by XRD and absorbance measurements, respectively, for antimony replacement of up to x = 0.7. The optoelectronic properties of the materials were studied using time-resolved microwave conductivity (TRMC) measurements, and showed a decrease in photoconductance of two orders of magnitude and a reduction of charge carrier lifetime as the annealing temperature was lowered from 250°C to 90°C. Low temperature absorbance measurements combined with TRMC measurements indicated that the peak in the absorbance spectra was most likely the result of an excitonic transition.
Doping on Demand
Permanent electrochemical doping of colloidal quantum dots and organic semiconductors
In this thesis an alternative approach of mixing lead with other smaller divalent metal cations is explored. MAPbI3 is synthesized using lead acetate due to the facile removal of byproducts and its tolerance for mixing with other metal salts. The alternate metal salts were selected on the basis of their solubility in commonly used solvents and the suitability of the crystal structure of the precursor compound for perovskite structure formation. We found manganese to be a suitable substituent of lead and the upper limit for these mixed metal perovskites after geometrical calculations as well as experimental verification is found to be around 30%. Though the mixed metal compositions maintain the tetragonal crystal structure of lead based perovskites, a secondary crystalline phase is observed with increased lead substitution. Efforts are made to identify its composition and to remove it by optimizing the thermal treatment as well as the ratio between the other precursors. The optimized recipe for 30% lead substituted showed phase purity as well as good optical and electronic properties. Detailed compositional analysis revealed that, unlike MAPbI3 synthesized using chloride based precursors, in these mixed metal compositions chlorine is also incorporated in the films containing manganese especially near the substrate interface. This suggests that the smaller metal cation has an affinity for the smaller halide anion and that it plays a key role in the initiation of nucleation in such mixed metal (Pb:Mn) compositions. Finally, solar cells were made as a proof of concept incorporating these mixed metal perovskites and devices with up to 1.45% PCE were obtained. ...
In this thesis an alternative approach of mixing lead with other smaller divalent metal cations is explored. MAPbI3 is synthesized using lead acetate due to the facile removal of byproducts and its tolerance for mixing with other metal salts. The alternate metal salts were selected on the basis of their solubility in commonly used solvents and the suitability of the crystal structure of the precursor compound for perovskite structure formation. We found manganese to be a suitable substituent of lead and the upper limit for these mixed metal perovskites after geometrical calculations as well as experimental verification is found to be around 30%. Though the mixed metal compositions maintain the tetragonal crystal structure of lead based perovskites, a secondary crystalline phase is observed with increased lead substitution. Efforts are made to identify its composition and to remove it by optimizing the thermal treatment as well as the ratio between the other precursors. The optimized recipe for 30% lead substituted showed phase purity as well as good optical and electronic properties. Detailed compositional analysis revealed that, unlike MAPbI3 synthesized using chloride based precursors, in these mixed metal compositions chlorine is also incorporated in the films containing manganese especially near the substrate interface. This suggests that the smaller metal cation has an affinity for the smaller halide anion and that it plays a key role in the initiation of nucleation in such mixed metal (Pb:Mn) compositions. Finally, solar cells were made as a proof of concept incorporating these mixed metal perovskites and devices with up to 1.45% PCE were obtained.