Simulation of SiO2 deposition in a vertical 300 mm LPCVD furnace

Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

Influence of SiH2Cl2 on the kinetics of chemical vapor deposition of tungsten by SiH4 reduction of WF6.

Final Report on the materials properties of W and WSI2 produced with the WF6/Poly-Si Displacement reaction

Properties of tungsten point contacts formed with chemical vapour deposition

Modeling of blanket and selective tungsten LPCVD

The kinetics of tungsten deposition from the H2/WF6 mixture studied by in situ laser Raman scattering

The kinetics of tungsten deposition from a H2/WF6 mixture studied by in situ laser Raman scattering

The hydrogen reduction of WF6: A kinetic study based on in situ partial pressure measurements