Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

Simulation of SiO2 deposition in a vertical 300 mm LPCVD furnace

Influence of SiH2Cl2 on the kinetics of chemical vapor deposition of tungsten by SiH4 reduction of WF6.

Final Report on the materials properties of W and WSI2 produced with the WF6/Poly-Si Displacement reaction

The hydrogen reduction of WF6: A kinetic study based on in situ partial pressure measurements

The kinetics of tungsten deposition from a H2/WF6 mixture studied by in situ laser Raman scattering

Properties of tungsten point contacts formed with chemical vapour deposition

Modeling of blanket and selective tungsten LPCVD

The kinetics of tungsten deposition from the H2/WF6 mixture studied by in situ laser Raman scattering