MT
M. Trifunovic
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8 records found
1
Journal article
(2021)
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Ye Li, Amir Mirza Gheytaghi, Miki Trifunovic, Yuanxing Xu, Guo Qi Zhang, Ryoichi Ishihara
3D integration has well-developed for traditional CMOS technology operating at room temperature, but few studies have been performed for cryogenic applications such as quantum computers. In this paper, a wafer-to-wafer bonding of superconductive joints based on niobium nitride (NbN) is performed to demonstrate the possibility of 3D integration of superconducting chips. The NbN thin films are deposited by magnetron sputtering. Its high critical temperature (15.2 K) is achieved by optimizing the sputtering recipe in terms of N2 flow rate and discharge voltage. Wafer-level bumping is bonded by the thermo-compression method. The sheet resistance of the thin film and the contact resistance of the joints are measured by the Greek-cross (4-point Kelvin method) and daisy chain structures at cryogenic temperature, respectively. Direct-bonding wafers with NbN superconductive joints avoid using adhesive layers and the bonding interface could still present superconducting electrical connections in a cryogenic environment above 4 K, which will allow us to use a smaller and high-cooling power cryostat. The contribution of this work could lead to the fabrication of multi-layered superconducting chip that operates beneficially in cryogenic temperature, which is essential in building scalable quantum processors.
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3D integration has well-developed for traditional CMOS technology operating at room temperature, but few studies have been performed for cryogenic applications such as quantum computers. In this paper, a wafer-to-wafer bonding of superconductive joints based on niobium nitride (NbN) is performed to demonstrate the possibility of 3D integration of superconducting chips. The NbN thin films are deposited by magnetron sputtering. Its high critical temperature (15.2 K) is achieved by optimizing the sputtering recipe in terms of N2 flow rate and discharge voltage. Wafer-level bumping is bonded by the thermo-compression method. The sheet resistance of the thin film and the contact resistance of the joints are measured by the Greek-cross (4-point Kelvin method) and daisy chain structures at cryogenic temperature, respectively. Direct-bonding wafers with NbN superconductive joints avoid using adhesive layers and the bonding interface could still present superconducting electrical connections in a cryogenic environment above 4 K, which will allow us to use a smaller and high-cooling power cryostat. The contribution of this work could lead to the fabrication of multi-layered superconducting chip that operates beneficially in cryogenic temperature, which is essential in building scalable quantum processors.
Silicon can be printed using liquid silicon ink, which is a mixture of polymerized cyclopentasilane (CPS) and a solvent. Thermal annealing higher than 350oC of this material, however, was necessary, to convert it to solid silicon, which prevented its usage on inexpensive substrates with a limited thermal budget. We review a novel method that forms polycrystalline silicon (poly-Si) patterns directly on paper using the same liquid silicon with doctor-blade coating and local irradiation of excimer-laser with room temperature process. We review also the process and electrical properties of poly-Si TFTs fabricated on the paper. This technique will breakthrough the printed electronics by enabling applications such as fast printed electronics that are inexpensive, fully-recyclable, biodegradable and even edible.
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Silicon can be printed using liquid silicon ink, which is a mixture of polymerized cyclopentasilane (CPS) and a solvent. Thermal annealing higher than 350oC of this material, however, was necessary, to convert it to solid silicon, which prevented its usage on inexpensive substrates with a limited thermal budget. We review a novel method that forms polycrystalline silicon (poly-Si) patterns directly on paper using the same liquid silicon with doctor-blade coating and local irradiation of excimer-laser with room temperature process. We review also the process and electrical properties of poly-Si TFTs fabricated on the paper. This technique will breakthrough the printed electronics by enabling applications such as fast printed electronics that are inexpensive, fully-recyclable, biodegradable and even edible.
Printing of electronics has been gaining a lot of attention over the past decade as a low cost alternative to conventional electronic fabrication methods. A significant development in this area was the possibility to print a silicon precursor, polydihydrosilane, which can directly be transformed into polycrystalline silicon by an excimer laser treatment. Due to the limited laser heat diffusion, low-cost flexible substrates such as plastics and even paper could be used that typically have low thermal budgets. Since the silicon precursor is sensitive to ultraviolet light and may transform in a photochemical reaction, the question arises whether the excimer laser crystallization is predominantly photochemical or rather a thermal reaction. In this work, a model is developed and reflected to experimental data, to understand the physics behind the process. Through finite-element analysis and experimental characterizations it was observed that the physics behind the process was predominantly thermal, and that instead of an intermediate transition to a-Si, a direct transformation to poly-Si exists. By understanding this process, the treatment can be optimized or more efficient tools can be used that would enable a low cost production of high performing silicon devices
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Printing of electronics has been gaining a lot of attention over the past decade as a low cost alternative to conventional electronic fabrication methods. A significant development in this area was the possibility to print a silicon precursor, polydihydrosilane, which can directly be transformed into polycrystalline silicon by an excimer laser treatment. Due to the limited laser heat diffusion, low-cost flexible substrates such as plastics and even paper could be used that typically have low thermal budgets. Since the silicon precursor is sensitive to ultraviolet light and may transform in a photochemical reaction, the question arises whether the excimer laser crystallization is predominantly photochemical or rather a thermal reaction. In this work, a model is developed and reflected to experimental data, to understand the physics behind the process. Through finite-element analysis and experimental characterizations it was observed that the physics behind the process was predominantly thermal, and that instead of an intermediate transition to a-Si, a direct transformation to poly-Si exists. By understanding this process, the treatment can be optimized or more efficient tools can be used that would enable a low cost production of high performing silicon devices
Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
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Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude lower price than low-cost polymer alternatives, and is biodegradable. As ink materials, organic and metal-oxide semiconductors are thoroughly being investigated; however, they lack in electric performance compared to silicon in terms of device mobility, reliability, and energy efficiency. In recent years, liquid precursors for silicon were found and used to create polycrystalline silicon (poly-Si). However, fabrication of transistors on top of low-cost flexible substrates such as paper has remained an outstanding challenge. Here we demonstrate both p-channel and n-channel poly-Si thin-film transistors (TFTs) fabricated directly on top of paper with field-effect mobilities of 6.2 and 2.0 cm2/V s, respectively. Many fabrication challenges have been overcome by limiting the maximum process temperature to approximately 100 °C, and avoiding liquid chemicals commonly used for etching and cleaning. Patterning of poly-Si has been achieved by additive selective crystallization of the precursor film using an excimer laser. This work serves as a proof of concept, and has the potential to further improve device performance. Owing to the low-cost, biodegradable nature of paper, and the high performance, reliability, and energy efficiency of poly-Si TFTs, this work opens a pathway toward truly low-cost, low-power, recyclable applications including smart packages, biodegradable health monitoring units, flexible displays, and disposable sensor nodes.
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Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude lower price than low-cost polymer alternatives, and is biodegradable. As ink materials, organic and metal-oxide semiconductors are thoroughly being investigated; however, they lack in electric performance compared to silicon in terms of device mobility, reliability, and energy efficiency. In recent years, liquid precursors for silicon were found and used to create polycrystalline silicon (poly-Si). However, fabrication of transistors on top of low-cost flexible substrates such as paper has remained an outstanding challenge. Here we demonstrate both p-channel and n-channel poly-Si thin-film transistors (TFTs) fabricated directly on top of paper with field-effect mobilities of 6.2 and 2.0 cm2/V s, respectively. Many fabrication challenges have been overcome by limiting the maximum process temperature to approximately 100 °C, and avoiding liquid chemicals commonly used for etching and cleaning. Patterning of poly-Si has been achieved by additive selective crystallization of the precursor film using an excimer laser. This work serves as a proof of concept, and has the potential to further improve device performance. Owing to the low-cost, biodegradable nature of paper, and the high performance, reliability, and energy efficiency of poly-Si TFTs, this work opens a pathway toward truly low-cost, low-power, recyclable applications including smart packages, biodegradable health monitoring units, flexible displays, and disposable sensor nodes.
Solution-processing has gained widespread attention over the past years due to their potential low-cost advantage in terms of fabrication of electronics as well as application to flexible electronics. Cyclopentasilane is used for the solution-based processing of silicon. As a liquid, the material has the potential to be applied directly on low-cost flexible substrates that generally have a low thermal budget, by annealing the liquid using an excimer laser treatment. So far, electronics based on this material have only been demonstrated on rigid and high cost substrates. In this work, silicon has been applied as a solution on top of a paper substrate and processed into PMOS and NMOS thin-film transistors (TFTs). The maximum fabrication temperature was limited to approximately 100° C. By being able to fabricate devices on top of a paper substrate, a pathway opens towards new applications that combine the true low-cost and biodegradability with the high performance of silicon electronics.
...
Solution-processing has gained widespread attention over the past years due to their potential low-cost advantage in terms of fabrication of electronics as well as application to flexible electronics. Cyclopentasilane is used for the solution-based processing of silicon. As a liquid, the material has the potential to be applied directly on low-cost flexible substrates that generally have a low thermal budget, by annealing the liquid using an excimer laser treatment. So far, electronics based on this material have only been demonstrated on rigid and high cost substrates. In this work, silicon has been applied as a solution on top of a paper substrate and processed into PMOS and NMOS thin-film transistors (TFTs). The maximum fabrication temperature was limited to approximately 100° C. By being able to fabricate devices on top of a paper substrate, a pathway opens towards new applications that combine the true low-cost and biodegradability with the high performance of silicon electronics.