The IEEE European Test Symposium (ETS) has been facilitating progress in electronic systems testing since its launch in 1996. On the occasion of its 30th anniversary, this collaborative paper gathers sections by 21 ETS teams to outline their influential ideas and milestones. Each team's section highlights historical perspective, current research, frameworks and projects as well as forward-looking research agendas in the area of electronic-based circuits and systems testing, reliability, safety, security and validation. This anniversary summary documents how research of various ETS teams, exemplifying the test community, has been evolving and transitioning from concepts to practical standards and Electronic Design Automation (EDA) tools and flows. This legacy is a strong base to drive the next generation of advances in electronic systems testing.

The Soft-Error (SE) reliability and the effects of Negative Bias Temperature Instability (NBTI) in deep submicron technologies are characterized as the major critical issues of high-performance integrated circuits. The previous scientific research studies provide a comprehensive description that the soft-error vulnerability becomes more severe as the circuit performance degrades with aging. The main reason is the reduction of cell-level critical charge in an aging environment. However, such increased soft-error generation does not necessarily contribute towards circuits' critical functional failures. The proposal of this paper is the experimental investigation of soft error propagation at the aged gate-level by considering the different derating factors like Electrical Derating (EDR), Temporal Derating (TDR), Logical Derating (LDR), and Functional Derating (FDR). As contrary to the previous studies, the results of this work prove that SEU fault propagation probability is reducing in critical paths as time advances while the propagation probability of SET faults is neither reducing nor increasing, but the spot of generation of failure enhancing SETs is shifting within the clock period.

The current demands for autonomous driving generated momentum for an increase in research in the different technologies required for these applications. Nonetheless, the limited access to representative designs and industrial methodologies poses a challenge to the research community. Considering this scenario, there is a high demand for an open-source solution that could support development of research targeting automotive applications. This paper presents the current status of AutoSoC, an automotive SoC benchmark suite that includes hardware and software elements and is entirely open-source. The objective is to provide researchers with an industrial-grade automotive SoC that includes all essential components, is fully customizable, and enables analysis of functional safety solutions and automotive SoC configurations. This paper describes the available configurations of the benchmark including an initial assessment for ASIL B to D configurations.

Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of major importance as they may lead to test escapes. This paper proposes a new design-for-testability (DFT) scheme for FinFET SRAMs to detect such faults by creating a mismatch in the sense amplifier (SA). This mismatch, combined with the defect in the cell, will incorrectly bias the SA and cause incorrect read outputs. Furthermore, post-silicon calibration schemes can be used to avoid over-testing or test escapes caused by process variation effects. Compared to the state of the art, this scheme introduces negligible overheads in area and test time while it significantly improves fault coverage and reduces the number of test escapes.

Integrated circuits typically contain design margins to compensate for aging. As aging impact increases with technology scaling, bigger margins are necessary to achieve the desired reliability. However, these increased margins lead to a reduced performance and lower yield. Alternatively, mitigation schemes can be deployed to reduce the aging. This paper proposes a software-based method to mitigate the aging of the memory's address decoder logic due to Bias Temperature Instability. The method is based on periodically applying a rejuvenation application on top of a user application. The goal of the rejuvenation application is to recover aged transistors of the critical paths of the address decoder. The experimental results show that the proposed method significantly reduces aging in cases when applications consist of memory access patterns that result in an unbalanced stress in the address decoder logic. In particular, it reduces the degradation of the address decoder's setup delay by up to 43% with an execution overhead of only 1%.