Determining Hamiltonian parameters from noisy experimental measurements is a key task for the control of experimental quantum systems. An interesting experimental platform where precise knowledge of device parameters is useful is the quantum-dot-based Kitaev chain. In these systems, the fine tuning of Hamiltonian parameters is crucial in order to reach the desired regime with stable midgap modes. In this work, we demonstrate an adversarial machine-learning algorithm to determine the parameters of a quantum-dot-based Kitaev chain. We train a convolutional conditional generative adversarial neural network (CCGAN) with simulated differential conductance data and use the model to predict the parameters at which Majorana bound states are predicted to appear. In particular, the CCGAN model facilitates a rapid, numerically efficient exploration of the phase diagram describing the transition between elastic co-tunneling and crossed Andreev reflection regimes. We verify the theoretical predictions of the model by applying it to experimentally measured conductance obtained from a minimal Kitaev chain consisting of two spin-polarized quantum dots coupled by a superconductor-semiconductor hybrid. Our model accurately predicts, with an average success probability of 97%, whether the measurement was taken in the elastic co-tunneling or crossed Andreev reflection-dominated regime. Our work constitutes a stepping stone towards fast, reliable parameter prediction for tuning quantum dot systems into distinct Hamiltonian regimes. Ultimately, our results yield a strategy to support Kitaev-chain tuning that is scalable to longer chains.

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Quasi-flat-bands emerging in buckled monolayer graphene superlattices have been recently shown to realize correlated states analogous to those observed in twisted graphene multilayers. Here, we demonstrate the emergence of valley topology driven by competing electronic correlations in buckled graphene superlattices. We show, both by means of atomistic models and a low-energy description, that the existence of long-range electronic correlations leads to a competition between antiferromagnetic and charge density wave instabilities, that can be controlled by means of screening engineering. Interestingly, we find that the emergent charge density wave has a topologically non-trivial electronic structure, leading to a coexistent quantum valley Hall insulating state. In a similar fashion, the antiferromagnetic phase realizes a spin-polarized quantum valley-Hall insulating state. Our results put forward buckled graphene superlattices as a new platform to realize interaction-induced topological matter.

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Electronic correlations stemming from nearly flat bands in van der Waals materials have demonstrated to be a powerful playground to engineer artificial quantum matter, including superconductors, correlated insulators and topological matter. This phenomenology has been experimentally observed in a variety of twisted van der Waals materials, such as graphene and dichalcogenide multilayers. Here we show that spontaneously buckled graphene can yield a correlated state, emerging from an elastic pseudo Landau level. Our results build on top of recent experimental findings reporting that, when placed on top of hBN or NbSe₂ substrates, wrinkled graphene sheets relax forming a periodic, long-range buckling pattern. The low-energy physics can be accurately described by electrons in the presence of a pseudo-axial gauge field, leading to the formation of sublattice-polarized Landau levels. Moreover, we verify that the high density of states at the zeroth Landau level leads to the formation of a periodically modulated ferrimagnetic groundstate, which can be controlled by the application of external electric fields. Our results indicate that periodically strained graphene is a versatile platform to explore emergent electronic states arising from correlated elastic Landau levels.

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Two-dimensional (2D) semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of 2D materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI₂ by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectroscopy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI₂ and study their optoelectronic properties.

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The interaction of electrons with a periodic potential of atoms in crystalline solids gives rise to band structure. The band structure of existing materials can be measured by photoemission spectroscopy and accurately understood in terms of the tight-binding model, however not many experimental approaches exist that allow to tailor artificial crystal lattices using a bottom-up approach. The ability to engineer and study atomically crafted designer materials by scanning tunnelling microscopy and spectroscopy (STM/STS) helps to understand the emergence of material properties. Here, we use atom manipulation of individual vacancies in a chlorine monolayer on Cu(100) to construct one- and two-dimensional structures of various densities and sizes. Local STS measurements reveal the emergence of quasiparticle bands, evidenced by standing Bloch waves, with tuneable dispersion. The experimental data are understood in terms of a tight-binding model combined with an additional broadening term that allows an estimation of the coupling to the underlying substrate.@en

We report on the large-scale synthesis of highly oriented ultrathin MoO₃ layers using a simple and low-cost atmospheric pressure, van der Waals epitaxy growth on muscovite mica substrates. By this method, we are able to synthesize high quality centimeter-scale MoO₃ crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO₂) by a deterministic transfer method and be extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional calculations. Interestingly, the calculations demonstrate that bulk MoO₃ has a rather weak electronic interlayer interaction, and thus, it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 μm × 110 μm in lateral dimensions) and find responsivities of 30 mA W^-1 for a laser power density of 13 mW cm^-2 in the UV region of the spectrum and also as an electron acceptor in a MoS₂-based field-effect transistor.

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The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.

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