ZC

23 records found

Electromigration (EM) is a crucial failure mode in Aluminum (Al) interconnection wires those are widely used in high density semiconductor packaging. This study systematically investigated the influence of EM on the mechanical properties of Al interconnects via nanoindentation ex ...
In this study, we combined finite element method (FEM) based on Ansys and Noesis Optimus software to investigate the effect of bump structures and loading conditions on the electromigration properties of solder bumps in WLCSP. A numerical model considering current density, vacanc ...

Corrigendum to “Insights into the high-sulphur aging of sintered silver nanoparticles

An experimental and ReaxFF study” [Corros. Sci. 192 (2021) 109846] (Corrosion Science (2021) 192, (S0010938X21006120), (10.1016/j.corsci.2021.109846))

The authors regret that in the above article the Fig. 3 contains an error of cross-section image of group C at 48 h on Page 4. Fig. 3 should read: This correction does not influence the method, results and conclusions of the original article. The authors would like to apologise f ...
This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech and standard wafer-level electromigration acceleration test (SWEAT)-like structures, which were fabricated on four-inch w ...
In this paper, we apply the Eshelby's solution to study the effect of passivation layer on electromigration (EM) failure in a conductor. The passivation layer is considered as an elastic material, not a rigid layer anymore. Thus, the deformation and stress evolution in the conduc ...
This paper presented a comprehensive experimental and simulation study for thermomigration (TM) accompanying electromigration (EM) at elevated current densities. Both Blech and standard wafer-level electromigration acceleration test (SWEAT)-like test structures, with aluminum (Al ...
This paper investigates thermomigration (TM) and electromigration (EM) in SWEAT structure. Firstly, the distribution of temperature along SWEAT structure during EM is obtained by using finite element (FE) simulation. The FE simulation results show that the temperature is almost u ...
The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the ...

Sulfur-Rich Ageing Mechanism of Silicone Encapsulant Used in LED Packaging

An Experimental and Molecular Dynamic Simulation Study

In a light-emitting diode (LED) package, silicone encapsulant serves as a chip protector and enables the light to transmit, since it exhibits the advantages of high light transmittance, high refractive index, and high thermal stability. However, its reliability is still challenge ...

Effects of temperature and grain size on diffusivity of aluminium

Electromigration experiment and molecular dynamic simulation

Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temperatu ...
In this paper, a 3D and fully coupled electromigration modeling is implemented using COMSOL. The fully coupled multi-physics theory has a unique set of partial differential equations, which cannot be directly simulated with the standard finite element software such as ABAQUS and ...
This dissertation presents a comprehensive and integrated study, including theory development, numerical simulation and experiment, for multi-physics driven electromigration in microelectronics. Multi-scale methodologies from atomistic modeling to continuum theory-based simulatio ...
This paper analyzes the mechanical properties of tungsten disulfide (WS2) by means of multiscale simulation, including density functional theory (DFT), molecular dynamic (MD) analysis, and finite element analysis (FEA). We first conducted MD analysis to calculate the mechanical p ...
In this paper, large-scale molecular dynamic (MD) simulation is performed to investigate the concentration-dependent vacancy volume relaxation in Al, Cu, and Au, respectively. The vacancy volume relaxation factor is calculated and correlated to the microstructure change based on ...
In high power electronics packaging, sintered silver nanoparticle joints suffer from thermal-humidity- electrical-chemical joint driven corrosion in extreme environments. In this paper, we conducted aging tests on sintered silver nanoparticles under high-temperature, high-humidit ...

The interface adhesion of CaAlSiN3

Eu2+ phosphor/silicone used in light-emitting diode packaging: A first principles study

The CaAlSiN3:Eu2+ red phosphor and its silicone/phosphor composite are very promising materials used in the high color rendering white light-emitting diode (LED) packaging. However, the reliabilities of CaAlSiN3:Eu2+ and its composite a ...
At present, most high-power white Light-emitting diode and laser diode (LED&LD) package is usually constructed by a blue LED&LD chip with a Cerium doped Yttrium Aluminum Garnet (YAG:Ce3+) yellow phosphor, but its color rendering performance is severely challeng ...
In this paper, a recently developed theory - general coupling model of electromigration, is implemented in ANSYS. We first identify several errors provided in ANSYS manual for electromigration modeling. Then the general coupling model is implemented in ANSYS and the detailed desc ...
A molecular dynamics (MD) simulation was performed on the coalescence kinetics and mechanical behavior of the pressure-assisted Cu nanoparticles (NPs) sintering at low temperature. To investigate the effects of sintering pressure and temperature on the coalescence of the nanopart ...
Elliptic Cu-Ag nanoflakes were syntheszied via facile in situ galvanic replacement between prepared Cu particles and Ag ions. Alloy nanoflakes with high purity and uniformity present a size of 700 × 500 nm, with a thinness ...