Recent advances in Resistive RAM (RRAM) based Computation-In-Memory (CIM) architectures highlight significant potential for accelerating data-intensive computing tasks. However, non-idealities in RRAM devices, such as variability, result in small sensing margins that can significantly affect the computational efficiency. This issue becomes even more pronounced when dealing with complex multi-operand logic operations. This paper introduces a circuit-level scheme for CIM-based multi-operand XOR logic operations, leveraging a Voltage-To-Time converter (VTC) to perform multi-phased XORs in a single clock cycle. In this approach, we exploit bitline capacitances for voltage-based sensing during computation, generating an output voltage that is linearly proportional to the operand values. This voltage is then converted into the desired logic output using the VTC design. Furthermore, low-power techniques are employed in the deployment of sense amplifiers, such as regulating power consumption during operation and disabling the amplifiers once the decision is made. Simulation results for a post-layout extracted 512x512 (256Kb) RRAM-based CIM array show that up to 16-operand XOR operation can be accurately and reliably performed as opposed to a maximum of three operands supported by state-of-the-art solutions, while offering up to 49× better figure-of-merit combining energy-efficiency and throughput.

Analog computation-in-memory (CIM) architecture alleviates massive data movement between the memory and the processor, thus promising great prospects to accelerate certain computational tasks in an energy-efficient manner. However, data converters involved in these architectures typically achieve the required computing accuracy at the expense of high area and energy footprint which can potentially determine CIM candidacy for low-power and compact edge-AI devices. In this work, we present a memory-periphery co-design to perform accurate A/D conversions of analog matrix-vector-multiplication (MVM) outputs. Here, we introduce a scheme where select-lines and bit-lines in the memory are virtually fixed to improve conversion accuracy and aid a ring-oscillator-based A/D conversion, equipped with component sharing and inter-matching of the reference blocks. In addition, we deploy a self-timed technique to further ensure high robustness addressing global design and cycle-to-cycle variations. Based on measurement results of a 4Kb CIM chip prototype equipped with TSMC 40nm, a relative accuracy of up to 99.71% is achieved with an energy efficiency of 115.1 TOPS/W and computational density of 12.1 TOPS/mm2 for the MNIST dataset. Thus, an improvement of up to 11.3X and 7.5X compared to the state-of-the-art, respectively.

Memristor-based computation-in-memory (CIM) can achieve high energy efficiency by processing the data within the memory, which makes it well-suited for applications like neural networks. However, memristors suffer from conductance variation problem where their programmed conductance values deviate from the desired values. Such variations lead to computational errors that result in degraded inference accuracy in CIM-based neural networks. In this paper, we present a mapping-aware biased training methodology to mitigate the impact of conductance variation on CIM-based neural networks. We first determine which conductance states of the memristor are inherently more immune to variation. The neural network is then trained under the constraint that important weights can only take numeric values which directly get mapped to such favorable states. Simulation results show that our proposed mapping-aware biased training achieves up to 2.4× hardware accuracy compared to the conventional training.

Spin-transfer torque magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for an energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing mechanism to improve the sensing margin of a CIM architecture for boolean binary logic (BBL) operations. We generate reference signals using multiple STT-MRAM devices and place them strategically into the array such that these signals can address the variations and trace the wire parasitics effectively. We have demonstrated this behavior using an STT-MRAM model, which is calibrated using 1Mbit characterized array. Results show that our proposed architecture for binary neural networks (BNN) achieves up to 17.8 TOPS/W on the MNIST dataset and 130× performance improvement for the text encryption compared to the software implementation on Intel Haswell processor.