Copper zinc tin sulfide (CZTS) thin films were synthesized on soda lime glass using pulsed laser deposition (PLD) at room temperature. Introducing gold nanoparticles (AuNPs) in a sandwich structure led to increased CZTS particle size and a shift in the localized surface plasmon resonance (LSPR) peak of the AuNPs, influenced by different laser energy levels. The absorption measurements revealed intriguing behavior across the visible and near-infrared (NIR) regions, making these films appealing for 1 Sun photodetectors. Furthermore, the presence of AuNPs in the sandwich structure reduced microstrain effects, measuring 1.94 × 10−3 compared to 3.38 × 10−3 in their absence. This reduction directly enhances carrier transport, which is particularly beneficial for accelerating the performance of photodetector devices. This effect of AuNPs also contributed to higher dielectric coefficients, further improving the photodetector performance. Under 1 Sun illumination conditions, this enhancement resulted in a rapid rising time of 95.4 ms, showcasing the potential for faster photodetection.

Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the analysis of binding energy, electron probability distribution, and diamagnetic susceptibility in connection with both the ground (1s) and excited (2p) electron states. Utilizing advanced computational techniques, specifically the Finite Elements Method (FEM) implemented through Python code, this study unveils a marked alteration in the interaction between electrons and impurities when exposed to external fields. Significantly, the characteristics of the confinement potential exert a substantial influence on the explored physical parameters. This research significantly advances our understanding of the interaction between impurities and intense fields, offering valuable insights into solid-state phenomena within low-dimensional systems. Consequently, it contributes to the design and fabrication of next-generation applications in the field of quantum well systems, encompassing areas such as lighting, detection, information processing, sensing, and energy conversion.

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.

Photonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu₂ZnSnS₄ solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone of the solar cell. It was found that the thickness of PhC layers greatly affects the width of the photonic bandgap and that increasing the thickness of VO₂ causes it to shift to a higher wavelength range. The PhC layers were added at the back side of the solar cell in two different configurations: (Monoclinic (M) VO₂/TiO₂) and (Tetragonal (T) VO₂/TiO₂) via SCAPS model. The study found that the (M VO₂/TiO₂) configuration led to an enhancement of the device's efficiency from 11.02 to 12.79%, while the (T VO₂/TiO₂) reaches 16.88%. The study concluded that the PhC layers enhance the light-matter coupling and photonic coupling and improvement in the device's performance.

The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

The use of electronic devices that incorporate multilayer ceramic capacitors (MLCCs) is on the rise, requiring materials with good electrical properties and a narrow band gap. This study synthesized yttrium-substituted barium titanate (Ba_1-xY_xTiO₃, BYT) using a sol-gel process at 950 °C with varying concentrations of yttrium (0 ≤ x ≤ 0.3). X-ray diffraction analysis showed that the tetragonal phase became less pronounced as the yttrium content increased. The samples had varying grain sizes and porosity, with the BY30%T sample having the narrowest band gap at 2.21 eV. The BYT ceramic with 30% yttrium had a thermal conductivity of up to 7 W/m K and an electrical conductivity down to 0.002 (Ω cm)⁻¹ at 180 °C. The current-voltage characteristics of the BYT MLCC were also studied, showing potential use in next-generation high-capacity MLCCs. This work presents BYT as a promising material for these types of capacitors.

This study focused on investigating the optoelectronic properties of molybdenum trioxide (α-MoO₃) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard DFT with GGA-PBE resulted in a value of 1.19 eV, which deviated significantly from experimental measurements. The GGA + U method with Hubbard U corrections was applied for the first time to improve the accuracy. This refinement led to a more precise band gap value of 3.09 eV, closely matching previously reported experimental data. The electronic parameters of the α-MoO₃ photodetector, such as ideality factor (n), barrier height (Φ₀), and series resistance (R_s), were analyzed using the thermionic emission theory and confirmed by Cheung and Nord's methods. The results demonstrated that the sample deposited with 100 pulses exhibited higher photodetector performance under UV illumination, despite having a lower R_s.

We present a breakthrough in the development of novel nanocomposites based on reduced graphene oxide (RGO)-functionalized zinc oxide (ZnO) nanorods that hold exceptional promise for their use in white light emitting diodes (LEDs) and reliable UV photodetection. The nanorods had a pristine hexagonal wurtzite structure, as confirmed by XRD analysis. SEM images revealed sandwich-like nanocomposites with ZnO nanorods coated in reduced graphene oxide and embedded between two layers of RGO. The study also confirmed the hybridization and interactions between the layers using Raman measurements. The resulting nanocomposites displayed a lower band gap energy than ZnO and exhibited unique photoluminescence spectra with a white PL light. The photodetector based on RGO/ZnO/RGO sandwich structures demonstrated exceptional photoresponse, with higher photocurrent under UV illumination, making it highly promising for a wide range of optoelectronic applications. Overall, this study offers a novel and powerful approach to create nanocomposite structures with enhanced optical characteristics.

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.

Strontium and Yttrium-doped and co-doped BaTiO₃ (BT) ceramics with the stoichiometric formulas BaTiO₃, B_1-xSr_xTiO₃, Ba_1-xY_xTiO₃, BaTi_1-xY_xO₃, Ba_1-xY_xTi_1-xY_xO₃, and Ba_1-xSr_xTi_1-xY_xO₃ (x = 0.075) noted as BT, BSrT, BYT, BTY, BYTY, and BSrTY have been synthesized through sol-gel method. X-ray diffraction (XRD) patterns of the prepared ceramics, calcined at a slightly low temperature (950 °C/3h), displayed that BT, BSrT, and BYT ceramics possess tetragonal structures and BTY, BYTY, and BSrTY have a cubic structure. The incorporation of the Ba and/or Ti sites by Sr²⁺ and Y³⁺ ions in the lattice of BaTiO₃ ceramic and the behaviors of the crystalline characteristics in terms of the Y and Sr dopant were described in detail. The scanning electron microscopy (SEM) images demonstrated that the densification and grain size were strongly related to Sr and Y elements. UV–visible spectroscopy was used to study the optical behavior of the as-prepared ceramic samples and revealed that Sr and Y dopants reduce the optical band gap energy to 2.74 eV for the BSrTY compound. The outcomes also demonstrated that the levels of Urbach energy are indicative of the created disorder following the inclusion of Yttrium. The measurements of the thermal conductivity indicated the influence of the doping mechanism on the thermal conductivity results of the synthesized samples. Indeed, the thermal conductivity of BaTiO₃ is decreased with Sr and Y dopants and found to be in the range of 085–2.23 W.m^-1. K⁻¹ at room temperature and decreases slightly with increasing temperature from 2.02 to 0.73-W.m^-1. K⁻¹. Moreover, the microstructure and grains distribution of the BT, BSrT, BYT, BTY, BYTY, and BSrTY samples impacted the compressive strength, hence; the compressive strength was minimized as the grain size decreased.

To study the structural, electronic, and optical properties of lead-free Barium titanate BaTiO₃ (BT) ferroelectric material in its tetragonal structure, a combination of experimental and theoretical studies has been used and the obtained results were discussed. The studied BT compound was prepared via the sol–gel technique. The calculated bandgap energy (E_g) and structural parameters of BT are determined using four types of exchange–correlation functionals (PBE, PBEsol, LDA, and PW91) in the perspective of the density functional theory (DFT). XRD and Raman analysis have shown that BT ceramic exhibits a tetragonal phase structure without any trace of impurity phases. The UV–vis investigation showed that BT has a bandgap energy of 3.19 eV, which is larger than the theoretically calculated values. The computed lattice parameter c is overestimated (as large as ~1% deviation) when using the LDA approximation. In contrast, PBEsol proved that those lattice constants were close to the experimental values (a deviation of less than 1%).

Gold (Au) nanoparticles trapped within Cu₂SnS₃ (CTS) thin films were effectively deposited on a low-cost glass substrate using a simple pulsed laser deposition of 15 mJ for 5 ns at a 10 Hz repetition rate. The film's structural, morphological, topography, optical, and optoelectronic properties were investigated. Highly crystalline ternary chalcogenide CTS with tetragonal symmetry and 17 nm grain size is prepared. The 110 Ω resistivity of the thin film increases up to 125 Ω indicating a negative photoresponse under visible light excitation. The decrease in the photocurrent is also observed with Cu₂SnS₃/Au/Cu₂SnS₃ sandwich ternary chalcogenide structure at resistivities values from 31 to 35 Ω and a Joule effect influence the presence of plasmonic Au nanoparticle interlayers involved a lower phonon disorder given a higher photoresponse effect as predicted from Urbach energy.

In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabolic, and triangular finite potential confinements, the ground and the two lowest excited states binding energies are investigated. Regardless of the shape, our findings show that the size, temperature, and applied electric field induce huge impacts on the binding energy. It reveals that the binding energy (1) is higher in rectangular shape than for other forms, (2) is reduced as the temperature and/or electric field are increased, and (3) is less sensitive to temperature and applied electric field in rectangular confinement compared to other profiles. The results we obtained are very consistent with the literature findings.