M. Zeman
Please Note
20 records found
1
PECVD radio-frequency (RF) power for the contacting a-Si layer on the underlying SiOx is the only variable in this project, varying from 5 W to 55 W, and pinhole density acts as a bridge to help analyse the intrinsic principles. Firstly, the results of a-Si:H thin film characterization suggest that with an increasing RF power, the a-Si:H thin film is grown at a higher deposition rate and becomes porous. In addition, the pinholes in tunnel oxide are inspected by applying the concepts of “selective etching” and “pinhole magnification”. With a two-step five-point sampling method, it is shown that the effect of RF power on the pinhole density is not monotonically increasing. The highest value is found at 25 W. To explain this, a concept of “protective layer” is proposed, which is defined as a buffer layer (contacting layer) formed at the very beginning during a-Si:H deposition. It appears to be more effective when higher RF power (> 35 W) is applied. Another influence on tunnel oxide property is discussed according to the result from XPS measurement. The percentage of Si4+ species is found in the case of 25 W, corresponding to the highest pinhole density. This proves to some extent that the severe particle bombardment brought by strong power would weaken or directly break the Si-O bonds in the PECVD substrate, that is the tunnel oxide in our case.
As a result of thin film characterization, five factors contribute to pinhole formation: (i) Defects in tunnel oxide from imperfect oxidation leave potential for pinhole formation. (ii) Severe ion bombardments in PECVD deposition are allowed to weaken or break Si-O in SiOx. (iii) Island growth of a-Si:H contacting layer makes the exposed region in tunnel oxide continue to be damaged. (iv) “Buffer layer” formation protects the substrate from ion bombardments. (v) The tensile stress applied by a-Si:H films during annealing intensifies the formation of pinholes.
Subsequently, an unexpected result from passivation quality assessment is that higher passivation level is presented with higher pinhole density. The best passivation quality is found in the case of 25 W, with J0 of 3.3 fA/cm2 and iVoc of 714 mV. Further, a large optimal process window for RF power adjustment is found from 25 W to 35 W, which leads to an iVoc over 710 mV, with single side J0 below 3.5 fA/cm2. The results from specific contact resistivity indicate that it is positively correlated to the pinhole density. Eventually, the champion passivating contact with a selectivity of 14.37 in this project is expected to yield a maximum efficiency of 28.9% in an ideal c-Si solar cell. ...
PECVD radio-frequency (RF) power for the contacting a-Si layer on the underlying SiOx is the only variable in this project, varying from 5 W to 55 W, and pinhole density acts as a bridge to help analyse the intrinsic principles. Firstly, the results of a-Si:H thin film characterization suggest that with an increasing RF power, the a-Si:H thin film is grown at a higher deposition rate and becomes porous. In addition, the pinholes in tunnel oxide are inspected by applying the concepts of “selective etching” and “pinhole magnification”. With a two-step five-point sampling method, it is shown that the effect of RF power on the pinhole density is not monotonically increasing. The highest value is found at 25 W. To explain this, a concept of “protective layer” is proposed, which is defined as a buffer layer (contacting layer) formed at the very beginning during a-Si:H deposition. It appears to be more effective when higher RF power (> 35 W) is applied. Another influence on tunnel oxide property is discussed according to the result from XPS measurement. The percentage of Si4+ species is found in the case of 25 W, corresponding to the highest pinhole density. This proves to some extent that the severe particle bombardment brought by strong power would weaken or directly break the Si-O bonds in the PECVD substrate, that is the tunnel oxide in our case.
As a result of thin film characterization, five factors contribute to pinhole formation: (i) Defects in tunnel oxide from imperfect oxidation leave potential for pinhole formation. (ii) Severe ion bombardments in PECVD deposition are allowed to weaken or break Si-O in SiOx. (iii) Island growth of a-Si:H contacting layer makes the exposed region in tunnel oxide continue to be damaged. (iv) “Buffer layer” formation protects the substrate from ion bombardments. (v) The tensile stress applied by a-Si:H films during annealing intensifies the formation of pinholes.
Subsequently, an unexpected result from passivation quality assessment is that higher passivation level is presented with higher pinhole density. The best passivation quality is found in the case of 25 W, with J0 of 3.3 fA/cm2 and iVoc of 714 mV. Further, a large optimal process window for RF power adjustment is found from 25 W to 35 W, which leads to an iVoc over 710 mV, with single side J0 below 3.5 fA/cm2. The results from specific contact resistivity indicate that it is positively correlated to the pinhole density. Eventually, the champion passivating contact with a selectivity of 14.37 in this project is expected to yield a maximum efficiency of 28.9% in an ideal c-Si solar cell.
AI on Low-Cost Hardware
FPGA subgroup
The aim of this thesis is to explore algorithms and neural network techniques suitable for implementation on FPGAs. While FPGAs provide almost complete control over all aspects of design, allowing for the development of high-performance systems, they have not gained widespread popularity in neural network development due to their limited accessibility compared to computers and microcontrollers.
In the thesis, an inference-only 8-bit quantized neural net is designed, implemented and deployed on the Diligent Zedboard, and the performance is compared to similar networks on other devices. The thesis then focuses on two learning algorithms: Forward-Forward learning and Hebbian learning. It is shown how Forward-Forward can be seen as a way to apply Hebbian learning rules, and a simplified algorithm is proposed for use in a quantized system and implemented on an FPGA.
Although the performance of the network is quite low, reaching only 90.5% on the MNIST dataset and 74.2% on Fashion MNIST, the results are promising enough to give ground for further research and show that even very simplified versions of the Forward-Forward algorithm are capable of learning.
Moreover, it demonstrates that the Forward-Forward algorithm is suitable for FPGA implementation.
Both implementations show that the processing speed of the FPGA implementations is much faster than that of similar network implementations on other devices. ...
The aim of this thesis is to explore algorithms and neural network techniques suitable for implementation on FPGAs. While FPGAs provide almost complete control over all aspects of design, allowing for the development of high-performance systems, they have not gained widespread popularity in neural network development due to their limited accessibility compared to computers and microcontrollers.
In the thesis, an inference-only 8-bit quantized neural net is designed, implemented and deployed on the Diligent Zedboard, and the performance is compared to similar networks on other devices. The thesis then focuses on two learning algorithms: Forward-Forward learning and Hebbian learning. It is shown how Forward-Forward can be seen as a way to apply Hebbian learning rules, and a simplified algorithm is proposed for use in a quantized system and implemented on an FPGA.
Although the performance of the network is quite low, reaching only 90.5% on the MNIST dataset and 74.2% on Fashion MNIST, the results are promising enough to give ground for further research and show that even very simplified versions of the Forward-Forward algorithm are capable of learning.
Moreover, it demonstrates that the Forward-Forward algorithm is suitable for FPGA implementation.
Both implementations show that the processing speed of the FPGA implementations is much faster than that of similar network implementations on other devices.
Firstly, the influences of different interfacial tunnelling oxides fabrication methods, nitric acid oxidation of silicon (NAOS-SiOx), plasma assisted N2O oxidation (PANO-SiOx), and thermal oxidation (t-SiOx) on the passivation of p+ poly-Si(Ox) passivating contacts are explored. It is found that Si4+ stoichiometry in the tunnelling oxide layer is an indicator for its quality. There is a positive correlation between Si4+ and SiOx density. The t-SiOx can be denser with higher Si4+ compared to its counterparts NAOS-SiOx and PANO-SiOx. And fewer boron dopants in-diffuse phenomenon can be observed in the t-SiOx samples. Then, different intrinsic layer deposition approaches are explored. The intrinsic layer deposited by LPCVD results in higher iVoc compared to PECVD counterpart. The enhanced iVoc is given by suppressing the blistering which is caused by hydrogen accumulation at the interface between intrinsic layer and SiOx. It is assumed that less hydrogen accumulation exists in intrinsic layer deposited by LPCVD. Next, p+ doping layer thickness is changed from 0 nm to 200 nm to observe its effect on the passivation quality. The optimum p+ doping layer thickness is found to be 100 nm with the highest iVoc. After that, the hydrogenation process is introduced to enhance chemical passivation by coating SiNx:H and performing forming gas annealing. The highest iVoc with the standard hydrogenation process is 674 mV. In order to improve the hydrogen level of p+ poly-Si(Ox) passivating contacts, AlOx:H inserted layer is used for the hydrogen reservoir together with SiNx:H. It results in an improved iVoc of 685 mV. It is assumed that the hydrogen in AlOx:H diffuses into c-Si/p+ poly-Si(Ox) interface and enhances the chemical passivation.
Besides, metallization methods of p+ poly-Si(Ox) passivity contacts are also studied. There are two approaches to complete the metallization process. Firstly, with thin p+ poly-Si(Ox) passivating contacts, TCO is required to provide with the lateral and vertical carrier transport as respect to the carrier collection. However, it commonly brings with the TCO introduced sputtering damage. The iVoc losses are 70-90 mV when TCO is sputtered on p+ poly-Si(Ox) passivating contacts. When the thickness of p+ doping layer is over 50 nm, sufficient lateral conductivity can be provided with thick p+ poly-Si(Ox) passivating contacts. Therefore, it can directly contact with metal which is the second method of metallization. However, when utilizing this metallization method, the metal induced recombinations need to be taken into consideration when contacting with p+ poly-Si(Ox) passivating contacts. Thus, the plot of Jo,total along with different metal fractions is fitted to extract Jo,metal of p+ poly-Si(Ox) passivating contacts with 100 nm p+ doping layer. When contacting with evaporated aluminum, the measured Jo,metal is around 91 fA/cm2. In addition, after calculating, there is 24 mV iVoc loss when p+ poly-Si(Ox) passivating contacts contacting with metal. It is smaller than the loss induced by TCO sputtering. Therefore, the thick p+ poly-Si(Ox) passivating contacts with 100 nm p+ doping layer directly contacting with metal is used as metallization method for the application in c-Si solar cell. In addition, after linear fitting and calculating, ρc between p+ poly-Si(Ox) passivating contacts with 100 nm boron doped layer and c-Si is about 23 mΩ· cm2.
Finally, p+ poly-Si(Ox) passivating contact is applied in c-Si solar cells together with n+ poly-Si(Ox) passivating contact as front surface field. The poly-poly solar cell of the highest quality has the following electrical performance: Voc is 648 mV, Jsc is 35.9 mA/cm2, FF is 73.1% and η is 17.0%. A roadmap to realize 22% is given by addressing the bottlenecks of poly-Si(Ox) passivating contacts based c-Si solar cells.
...
Firstly, the influences of different interfacial tunnelling oxides fabrication methods, nitric acid oxidation of silicon (NAOS-SiOx), plasma assisted N2O oxidation (PANO-SiOx), and thermal oxidation (t-SiOx) on the passivation of p+ poly-Si(Ox) passivating contacts are explored. It is found that Si4+ stoichiometry in the tunnelling oxide layer is an indicator for its quality. There is a positive correlation between Si4+ and SiOx density. The t-SiOx can be denser with higher Si4+ compared to its counterparts NAOS-SiOx and PANO-SiOx. And fewer boron dopants in-diffuse phenomenon can be observed in the t-SiOx samples. Then, different intrinsic layer deposition approaches are explored. The intrinsic layer deposited by LPCVD results in higher iVoc compared to PECVD counterpart. The enhanced iVoc is given by suppressing the blistering which is caused by hydrogen accumulation at the interface between intrinsic layer and SiOx. It is assumed that less hydrogen accumulation exists in intrinsic layer deposited by LPCVD. Next, p+ doping layer thickness is changed from 0 nm to 200 nm to observe its effect on the passivation quality. The optimum p+ doping layer thickness is found to be 100 nm with the highest iVoc. After that, the hydrogenation process is introduced to enhance chemical passivation by coating SiNx:H and performing forming gas annealing. The highest iVoc with the standard hydrogenation process is 674 mV. In order to improve the hydrogen level of p+ poly-Si(Ox) passivating contacts, AlOx:H inserted layer is used for the hydrogen reservoir together with SiNx:H. It results in an improved iVoc of 685 mV. It is assumed that the hydrogen in AlOx:H diffuses into c-Si/p+ poly-Si(Ox) interface and enhances the chemical passivation.
Besides, metallization methods of p+ poly-Si(Ox) passivity contacts are also studied. There are two approaches to complete the metallization process. Firstly, with thin p+ poly-Si(Ox) passivating contacts, TCO is required to provide with the lateral and vertical carrier transport as respect to the carrier collection. However, it commonly brings with the TCO introduced sputtering damage. The iVoc losses are 70-90 mV when TCO is sputtered on p+ poly-Si(Ox) passivating contacts. When the thickness of p+ doping layer is over 50 nm, sufficient lateral conductivity can be provided with thick p+ poly-Si(Ox) passivating contacts. Therefore, it can directly contact with metal which is the second method of metallization. However, when utilizing this metallization method, the metal induced recombinations need to be taken into consideration when contacting with p+ poly-Si(Ox) passivating contacts. Thus, the plot of Jo,total along with different metal fractions is fitted to extract Jo,metal of p+ poly-Si(Ox) passivating contacts with 100 nm p+ doping layer. When contacting with evaporated aluminum, the measured Jo,metal is around 91 fA/cm2. In addition, after calculating, there is 24 mV iVoc loss when p+ poly-Si(Ox) passivating contacts contacting with metal. It is smaller than the loss induced by TCO sputtering. Therefore, the thick p+ poly-Si(Ox) passivating contacts with 100 nm p+ doping layer directly contacting with metal is used as metallization method for the application in c-Si solar cell. In addition, after linear fitting and calculating, ρc between p+ poly-Si(Ox) passivating contacts with 100 nm boron doped layer and c-Si is about 23 mΩ· cm2.
Finally, p+ poly-Si(Ox) passivating contact is applied in c-Si solar cells together with n+ poly-Si(Ox) passivating contact as front surface field. The poly-poly solar cell of the highest quality has the following electrical performance: Voc is 648 mV, Jsc is 35.9 mA/cm2, FF is 73.1% and η is 17.0%. A roadmap to realize 22% is given by addressing the bottlenecks of poly-Si(Ox) passivating contacts based c-Si solar cells.
The main objective of this thesis is to demonstrate the novel poly-Si/SHJ hybrid TRJ IBC cell concept by fabricating such high-efficiency hybrid IBC cells. With the proposed hybrid IBC cell design, the BSF layers are deposited on the full rear side after the emitter patterning. Thus, a TRJ is introduced at the emitter ((p+)poly-Si). The carrier tunneling efficiency across the TRJ layers should be guaranteed. The BSF layers passivation quality is also crucial for hybrid IBC cell performance, and the shunting due to the full area deposited BSF layers should be limited as well.
The TRJ proof-of-concept was firstly demonstrated in FBC cells due to their easier fabrication processes. And different materials combinations of (i)a-Si:H, (n)a-Si:H and (n)nc-Si:H were used to form TRJ with (p+)poly-SiOx. Firstly, it was found that the existence of (i)a-Si:H is detrimental to the device performance, especially for the cell FF. Secondly, for cells without (i)a-Si:H layer, the cell performance was improved by replacing (n)a-Si:H with more conductive and low activation energy (n)nc-Si:H layer. At last, the TRJ with dual-n-layer, (p+)poly-SiOx/(n)a-Si:H/(n)nc-Si:H, was found to be most promising. And the cell FF decreases with (n)a-Si:H layer thickness. However, instead of only depositing (n)nc-Si:H, the (n)a-Si:H was kept for its better passivation ability than (n)nc-Si:H, as it is directly deposited on the c-Si surface at BSF in hybrid IBC cells.
Then the hybrid design with dual-n-layer was demonstrated and optimized regarding the passivation quality, TRJ efficiency and the Rshunt in IBC cells. We firstly demonstrated that poly-Si delivers better performance than poly-SiOx due to its lower resistivity. With 18 nm(at textured BSF)(n)n-Si:H, the (n)a-Si:H layer thickness optimizes at 3 nm in poly-Si/SHJ hybrid cells. The pitch width was also found to have an influence on cell external parameters as the number of fingers decreases with pitch width. The cell FF increases and the Jsc decreases with pitch widening. The best cell obtained in this project has 3/18 nm (n)a-Si:H/(n)nc-Si:H and a medium pitch width (650 μm). It has a Voc of 665 mV, a Jsc of 39.36 mA/cm2, a FF of 74.33% and an efficiency of 19.45%. ...
The main objective of this thesis is to demonstrate the novel poly-Si/SHJ hybrid TRJ IBC cell concept by fabricating such high-efficiency hybrid IBC cells. With the proposed hybrid IBC cell design, the BSF layers are deposited on the full rear side after the emitter patterning. Thus, a TRJ is introduced at the emitter ((p+)poly-Si). The carrier tunneling efficiency across the TRJ layers should be guaranteed. The BSF layers passivation quality is also crucial for hybrid IBC cell performance, and the shunting due to the full area deposited BSF layers should be limited as well.
The TRJ proof-of-concept was firstly demonstrated in FBC cells due to their easier fabrication processes. And different materials combinations of (i)a-Si:H, (n)a-Si:H and (n)nc-Si:H were used to form TRJ with (p+)poly-SiOx. Firstly, it was found that the existence of (i)a-Si:H is detrimental to the device performance, especially for the cell FF. Secondly, for cells without (i)a-Si:H layer, the cell performance was improved by replacing (n)a-Si:H with more conductive and low activation energy (n)nc-Si:H layer. At last, the TRJ with dual-n-layer, (p+)poly-SiOx/(n)a-Si:H/(n)nc-Si:H, was found to be most promising. And the cell FF decreases with (n)a-Si:H layer thickness. However, instead of only depositing (n)nc-Si:H, the (n)a-Si:H was kept for its better passivation ability than (n)nc-Si:H, as it is directly deposited on the c-Si surface at BSF in hybrid IBC cells.
Then the hybrid design with dual-n-layer was demonstrated and optimized regarding the passivation quality, TRJ efficiency and the Rshunt in IBC cells. We firstly demonstrated that poly-Si delivers better performance than poly-SiOx due to its lower resistivity. With 18 nm(at textured BSF)(n)n-Si:H, the (n)a-Si:H layer thickness optimizes at 3 nm in poly-Si/SHJ hybrid cells. The pitch width was also found to have an influence on cell external parameters as the number of fingers decreases with pitch width. The cell FF increases and the Jsc decreases with pitch widening. The best cell obtained in this project has 3/18 nm (n)a-Si:H/(n)nc-Si:H and a medium pitch width (650 μm). It has a Voc of 665 mV, a Jsc of 39.36 mA/cm2, a FF of 74.33% and an efficiency of 19.45%.
Slow sub-gap energy states as the origin of hysteresis in perovskite solar cells
Device modeling using Sentaurus
Numerical simulation of c-Si solar cells based on transition metal oxide as carrier selective contact
Drift diffusion and ab initio
Looking at MoOx/a-Si:H interface, ab initio simulations are employed to study interface properties. Accordingly, such interface is analysed using both materials in their crystalline matrix. It is demonstrated that oxygen deficiency tunes the MoOx work function, a statement which is key for the proper contact formation and consistent with drift diffusion results. Finally, the charge arrangement at interface reveals the creation of an interface dipole together with silicon dioxide interlayer which is coherent with drift diffusion simulations analysis. ...
Looking at MoOx/a-Si:H interface, ab initio simulations are employed to study interface properties. Accordingly, such interface is analysed using both materials in their crystalline matrix. It is demonstrated that oxygen deficiency tunes the MoOx work function, a statement which is key for the proper contact formation and consistent with drift diffusion results. Finally, the charge arrangement at interface reveals the creation of an interface dipole together with silicon dioxide interlayer which is coherent with drift diffusion simulations analysis.
Irradiance simulation of PV system in urban environments
3D view factor model validation and comparison with ray-tracing methods
The fabrication of mini-modules can help with this task as they can be fabricated with the already mature technology of crystalline silicon solar cells. They can be made lightweight and in different figures.
This work aims to investigate ways to facilitate the fabrication of modules for use in Building Integrated Photovoltaics or Product Integrating Photovoltaics by means of studying the impact of cutting solar cells into different figures and sizes. To prove the suitability of tools of full-sized modules into mini modules, a Cell-To-Module analysis is performed.
The results show that crystalline silicon can be effectively used for making modules in reduced sizes tackling the full integration of solar cells into objects.
...
The fabrication of mini-modules can help with this task as they can be fabricated with the already mature technology of crystalline silicon solar cells. They can be made lightweight and in different figures.
This work aims to investigate ways to facilitate the fabrication of modules for use in Building Integrated Photovoltaics or Product Integrating Photovoltaics by means of studying the impact of cutting solar cells into different figures and sizes. To prove the suitability of tools of full-sized modules into mini modules, a Cell-To-Module analysis is performed.
The results show that crystalline silicon can be effectively used for making modules in reduced sizes tackling the full integration of solar cells into objects.
module. In order to find the optimal properties of a PCM, a thermal model was first developed in COMSOL Multiphysics and benchmarked with field measurements from literature. Simulations for Rotterdam, the Netherlands, revealed that an optimized PCM could increase the yearly electrical yield by 1.23% for a rack-mounted module, or 3.52% for a roof-mounted module. Furthermore, measurements were performed with commercially available PCMs under a Large Area Solar Simulator (LASS). These were able to reduce the average module temperature by 30-36°C, albeit under heavy infrared radiation coming from the simulator. ...
module. In order to find the optimal properties of a PCM, a thermal model was first developed in COMSOL Multiphysics and benchmarked with field measurements from literature. Simulations for Rotterdam, the Netherlands, revealed that an optimized PCM could increase the yearly electrical yield by 1.23% for a rack-mounted module, or 3.52% for a roof-mounted module. Furthermore, measurements were performed with commercially available PCMs under a Large Area Solar Simulator (LASS). These were able to reduce the average module temperature by 30-36°C, albeit under heavy infrared radiation coming from the simulator.
In this work, the effect of TAT mechanisms on IBC-SHJ is studied by means of numerical simulations based on TCAD Sentaurus. Firstly, the TAT model is implemented as non-local process. It was found that TAT exhibits a negligible effect on electron collection, but dominates transport mechanisms in case of hole contact. Such an effect depends on band alignment at the doped layer/transparent conductive oxide (TCO) interface, where band-to-band tunneling in combination with TAT describe the transport of holes. In particular, TCO carrier concentration in combination with activation energy of deposited layer allows the collection by either TAT or band-to-band tunneling. In more detail, the density of traps described typically as dangling bond improves the transport of collecting carriers. Thus, the collection of carriers is evaluated in terms of energy and trap concentration, demonstrating that traps with an energy level of 0.5 to 0.7eV over the valence band enhances the FF, and thus, the solar cell performance.
Finally, the complete model is calibrated by comparing measured with simulated external parameters from a reference solar cell with and without TAT mechanisms. From this analysis, it is demonstrated that solar cell external parameters deploys more consistent values for Shockley-Read-Hall (SRH) recombination associated to bulk lifetime and surface recombination velocity using TAT model. ...
In this work, the effect of TAT mechanisms on IBC-SHJ is studied by means of numerical simulations based on TCAD Sentaurus. Firstly, the TAT model is implemented as non-local process. It was found that TAT exhibits a negligible effect on electron collection, but dominates transport mechanisms in case of hole contact. Such an effect depends on band alignment at the doped layer/transparent conductive oxide (TCO) interface, where band-to-band tunneling in combination with TAT describe the transport of holes. In particular, TCO carrier concentration in combination with activation energy of deposited layer allows the collection by either TAT or band-to-band tunneling. In more detail, the density of traps described typically as dangling bond improves the transport of collecting carriers. Thus, the collection of carriers is evaluated in terms of energy and trap concentration, demonstrating that traps with an energy level of 0.5 to 0.7eV over the valence band enhances the FF, and thus, the solar cell performance.
Finally, the complete model is calibrated by comparing measured with simulated external parameters from a reference solar cell with and without TAT mechanisms. From this analysis, it is demonstrated that solar cell external parameters deploys more consistent values for Shockley-Read-Hall (SRH) recombination associated to bulk lifetime and surface recombination velocity using TAT model.
Furthermore, when the applied voltage is abruptly changed, a transient current density response is introduced implying a capacitive behaviour. Due to this behaviour, there is an indication that PSCs cannot be represented by the conventional equivalent circuit. Thus, the purpose of this project is to investigate hysteresis phenomenon in PSC by electrical modelling. In this project, a PSC sample was fabricated by Solliance Solar Research. Time-resolved J-V measurement was done to obtain more insight of J(t) as a function of applied voltage. The hysteresis phenomenon was analyzed in different voltage scan direction and various scan rates. Simulation of band diagram in dark condition was done to understand working principle of PSC device. Two predicted equivalent circuit of the cell were derived from the simulated band diagram. These equivalent circuit models considered the charge accumulation at the bulk of perovskite and at the interface between charge transport layers and perovskite. Furthermore, two additional equivalent circuit models were proposed to represent the hysteresis effect. J(t) curve fitting of measurement results and simulation was employed to verify the equivalent circuit. This insight might help to get a better understanding of hysteresis effect in PSCs. ...
Furthermore, when the applied voltage is abruptly changed, a transient current density response is introduced implying a capacitive behaviour. Due to this behaviour, there is an indication that PSCs cannot be represented by the conventional equivalent circuit. Thus, the purpose of this project is to investigate hysteresis phenomenon in PSC by electrical modelling. In this project, a PSC sample was fabricated by Solliance Solar Research. Time-resolved J-V measurement was done to obtain more insight of J(t) as a function of applied voltage. The hysteresis phenomenon was analyzed in different voltage scan direction and various scan rates. Simulation of band diagram in dark condition was done to understand working principle of PSC device. Two predicted equivalent circuit of the cell were derived from the simulated band diagram. These equivalent circuit models considered the charge accumulation at the bulk of perovskite and at the interface between charge transport layers and perovskite. Furthermore, two additional equivalent circuit models were proposed to represent the hysteresis effect. J(t) curve fitting of measurement results and simulation was employed to verify the equivalent circuit. This insight might help to get a better understanding of hysteresis effect in PSCs.
In this work a promising fast EQE measurement prototype called Fast Optical Measurement System (FOMS) developed by Delft Spectral Technologies (DST) is investigated. The FOMS prototype currently can operate only with a modulation scheme (a sequence of images) based on Michelson interferometer. The FOMS prototype hence cannot test other more suitable modulation schemes. To overcome this limitation a model to mimic the working of the FOMS prototype was developed by characterizing the existing setup which involved spectral distribution and intensity variations measurements. Various sub-functions were developed based on the characterization results and they were used to develop the model that could predict the spectrum on each pixel of the image loaded on the system. The developed model takes images corresponding to different modulation schemes as input and predicts the current output for each image. The model was finally validated by generating a new modulation scheme based on monochromatic EQE system. The percentage error in the current generated by the model and the prototype was around 3\% which is within permissible limits.
In the future the developed model can serve as a tool to quickly test new modulation schemes that can make the FOMS prototype faster and more accurate. Further research with respect to developing images based on more suitable modulation schemes can help avoid the mathematical complexities in the Michelson interferometer based modulation scheme. Developing appropriate post-processing steps to complement the modulation schemes will help in obtaining the EQE characteristics of the device under test from the current predicted by the model. ...
In this work a promising fast EQE measurement prototype called Fast Optical Measurement System (FOMS) developed by Delft Spectral Technologies (DST) is investigated. The FOMS prototype currently can operate only with a modulation scheme (a sequence of images) based on Michelson interferometer. The FOMS prototype hence cannot test other more suitable modulation schemes. To overcome this limitation a model to mimic the working of the FOMS prototype was developed by characterizing the existing setup which involved spectral distribution and intensity variations measurements. Various sub-functions were developed based on the characterization results and they were used to develop the model that could predict the spectrum on each pixel of the image loaded on the system. The developed model takes images corresponding to different modulation schemes as input and predicts the current output for each image. The model was finally validated by generating a new modulation scheme based on monochromatic EQE system. The percentage error in the current generated by the model and the prototype was around 3\% which is within permissible limits.
In the future the developed model can serve as a tool to quickly test new modulation schemes that can make the FOMS prototype faster and more accurate. Further research with respect to developing images based on more suitable modulation schemes can help avoid the mathematical complexities in the Michelson interferometer based modulation scheme. Developing appropriate post-processing steps to complement the modulation schemes will help in obtaining the EQE characteristics of the device under test from the current predicted by the model.
An Active Switching Circuit for Solar Cells
A circuit that changes the wiring configuration of solar cells to optimise the electrical power output of a solar panel
device performance. Advanced substrate texturisation is one of the promising light management techniques that have drawn much attention recently. In state-of-the-art devices, randomly textured interfaces are often used to increase the optical performance. However, the introduction of periodic diffraction gratings resulted in world record conversion efficiencies for hydrogenated amorphous/nanocrystalline silicon (a-Si:H/nc-Si:H) tandem solar cells.
A different method of advanced texturisation is introducing modulated surface textures (MST). These MST structures combine various surface morphologies (random and/or periodic) to reach higher levels of light scattering over a broader wavelength range. Modulated surface textures based on large periodic gratings and small random textures have been successfully employed in single junction
nc-Si:H solar cells, resulting in a world record efficiency of 11.8 %. An MST structure based on large random features and small periodic gratings, however, has not been reported yet.
The aim of this work is to investigate the possibility of fabricating MST structures based on micro-textured glass with superimposed periodic gratings, and to obtain a functioning n-i-p nc-Si:H solar cell, based on an MST substrate. An optical and morphological analysis of randomly textured substrates, periodic gratings, and modulated surface textures was carried out. It was found that MST substrates can be fabricated using ITO induced, wet-etched glass substrates, and a photolithography process. MST structures resulted in light scattering into greater, less distinct angles, when compared to either one of the individual surface morphologies. Therefore, these structures show promising light scattering behaviour for application in nc-Si:H solar cells.
Hydrogenated nanocrystalline silicon solar cells were fabricated on randomly textured glass substrates and MST structures. Two-dimensional (2D) periodic gratings, with square and hexagonal lattice structures, were superimposed on randomly textured glass to obtain MST substrates. nc-Si:H solar cells based on hexagonal MST structures seemed to outperform their square lattice counterparts. A functioning device with an active area efficiency of 6.46 % and short-circuit current density (Jsc) of 19.74 mA/cm2 was fabricated. This work reports the first functioning nc-Si:H solar cell, based on a periodic-random modulated surface texture substrate. The best performing solar cell on randomly textured glass, however, exceeded this performance with an active area efficiency of 7.67 % and JSC of 23.2 mA/cm2. It can be concluded that functioning nc-Si:H solar cells can be fabricated on 2D MST substrates. Further research focused on the morphological optimisation of MST substrates could help to prevent defective material growth, to improve the electrical properties of future devices. ...
device performance. Advanced substrate texturisation is one of the promising light management techniques that have drawn much attention recently. In state-of-the-art devices, randomly textured interfaces are often used to increase the optical performance. However, the introduction of periodic diffraction gratings resulted in world record conversion efficiencies for hydrogenated amorphous/nanocrystalline silicon (a-Si:H/nc-Si:H) tandem solar cells.
A different method of advanced texturisation is introducing modulated surface textures (MST). These MST structures combine various surface morphologies (random and/or periodic) to reach higher levels of light scattering over a broader wavelength range. Modulated surface textures based on large periodic gratings and small random textures have been successfully employed in single junction
nc-Si:H solar cells, resulting in a world record efficiency of 11.8 %. An MST structure based on large random features and small periodic gratings, however, has not been reported yet.
The aim of this work is to investigate the possibility of fabricating MST structures based on micro-textured glass with superimposed periodic gratings, and to obtain a functioning n-i-p nc-Si:H solar cell, based on an MST substrate. An optical and morphological analysis of randomly textured substrates, periodic gratings, and modulated surface textures was carried out. It was found that MST substrates can be fabricated using ITO induced, wet-etched glass substrates, and a photolithography process. MST structures resulted in light scattering into greater, less distinct angles, when compared to either one of the individual surface morphologies. Therefore, these structures show promising light scattering behaviour for application in nc-Si:H solar cells.
Hydrogenated nanocrystalline silicon solar cells were fabricated on randomly textured glass substrates and MST structures. Two-dimensional (2D) periodic gratings, with square and hexagonal lattice structures, were superimposed on randomly textured glass to obtain MST substrates. nc-Si:H solar cells based on hexagonal MST structures seemed to outperform their square lattice counterparts. A functioning device with an active area efficiency of 6.46 % and short-circuit current density (Jsc) of 19.74 mA/cm2 was fabricated. This work reports the first functioning nc-Si:H solar cell, based on a periodic-random modulated surface texture substrate. The best performing solar cell on randomly textured glass, however, exceeded this performance with an active area efficiency of 7.67 % and JSC of 23.2 mA/cm2. It can be concluded that functioning nc-Si:H solar cells can be fabricated on 2D MST substrates. Further research focused on the morphological optimisation of MST substrates could help to prevent defective material growth, to improve the electrical properties of future devices.
Intrinsic amorphous silicon (a-Si:H) used as front passivation layer, is deposited on top of crystalline silicon and requires an interface with as few defects as possible to minimize the parasitic recombination velocity. A new pretreatment method studied in this thesis involves the growth of a silicon oxide (SiO2) on a crystalline silicon substrate, that will allow to get rid of most of the superficial defects after etching and before a-Si:H deposition. Lifetimes of up to 6 ms and saturation current density (J0) as low as 14 fA/cm2 can be reached with a 200 nm thick oxide.
As a-Si:H presents a very low lateral conductivity, a transparent conductive oxide (TCO) is needed to transport the charge carriers towards the front metal contacts. The resistivity of such a material should be as low as possible. While increasing the deposition temperature of Indium Tin Oxide (ITO), it has been possible to decrease the resistivity up to 2.5 ·10-4 Ω.cm at a temperature of 130°C, without reducing the optical properties of such a layer.
Finally, manufacturing defects are often introduced during the fabrication process, leading to some shunt losses (low shunt resistance). As we are fabricating several solar cells per wafer, it is most of the time necessary to cut them to get rid of the shunt before doing the measurements. This sensitive step could be avoided with a better isolation of each solar cell. Patterned ITO and metal have been developed in this thesis, allowing to reduce the shunt power losses in the range of 1-2% without the need to cut the cells.
...
Intrinsic amorphous silicon (a-Si:H) used as front passivation layer, is deposited on top of crystalline silicon and requires an interface with as few defects as possible to minimize the parasitic recombination velocity. A new pretreatment method studied in this thesis involves the growth of a silicon oxide (SiO2) on a crystalline silicon substrate, that will allow to get rid of most of the superficial defects after etching and before a-Si:H deposition. Lifetimes of up to 6 ms and saturation current density (J0) as low as 14 fA/cm2 can be reached with a 200 nm thick oxide.
As a-Si:H presents a very low lateral conductivity, a transparent conductive oxide (TCO) is needed to transport the charge carriers towards the front metal contacts. The resistivity of such a material should be as low as possible. While increasing the deposition temperature of Indium Tin Oxide (ITO), it has been possible to decrease the resistivity up to 2.5 ·10-4 Ω.cm at a temperature of 130°C, without reducing the optical properties of such a layer.
Finally, manufacturing defects are often introduced during the fabrication process, leading to some shunt losses (low shunt resistance). As we are fabricating several solar cells per wafer, it is most of the time necessary to cut them to get rid of the shunt before doing the measurements. This sensitive step could be avoided with a better isolation of each solar cell. Patterned ITO and metal have been developed in this thesis, allowing to reduce the shunt power losses in the range of 1-2% without the need to cut the cells.
First, a new approach to determine the roof segment orientation was introduced, using both the normal vector and the longest side of the roof segment polygon. A visual inspection was carried out, in which recent aerial images were compared to 3D roof segments that were provided by Readaar. For 145 roofs, the roof segments on which PV was placed were manually selected, such that they could validate the quick-scan. From the visual inspection it was deduced that in-roof obstacles were often not detected. Sometimes the customer had no desire to use the full potential of the roof, or preferred a rectangular panel layout instead of fitting the maximum amount of panels. Another finding was that the distance kept from the roof segment edge was much smaller than initially expected. For pitched roofs, there was virtually no distance between the roof edge and installed panels, while for flat roofs around 20 cm was kept. Using zero distance from the roof edge, the panel placement algorithm still underestimates the roof potential by 17.5% on average, with a relative standard deviation of 46.3%.
Three yield calculation methods were compared: the Solar Monkey method, the SVF & SCF method, and the method without obstacles. The predicted performance or final annual AC yield was compared with the actual measured performance, both measured in kWh/kWp per year. For the three methods, relative standard deviation values of 7.2%, 7.5% and 9.1% were found respectively. The three methods could generate yield predictions for 91.0%, 92.7%, and 93.1% of the 145 roofs. For highly shaded roofs with Sun Coverage Factor values above 0.25, the method neglecting obstacles performed significantly worse. Additionally, the performance of large roofs with an average segment area above 70m2 was generally under-predicted, while the relative standard deviation was highest. It is expected that using one obstacle view is not accurate enough for large roof segments.
The computational speed of the panel fitting algorithm for pitched roofs without internal obstacle segments was found to be 20.1± 5.0 m2s-1, whereas for flat roofs it was found to be 56.9±12.0 m2s-1. In order to optimise the quick-scan algorithm in both speed and accuracy, two filtering steps were carried out. Segments with a pitch angle over 10° and an orientation between 0° to 60° or 300° to 360º were filtered out, since they would have an annual performance below 650 kWh/kWp. Moreover, segments with an area less than 8.4 m2 were filtered out, since they were observed to fit less than 2 panels. The quick-scan calculation times for different yield prediction methods were found to be 15.50±1.01, 14.58±1.13 and 2.75±0.44 seconds per roof, respectively. These times were measured for data sets that had around 2 segments per roof after filtering on segment area and pitched segment orientation. It can be concluded that the method without obstacles is preferred when the calculation time is a limiting factor, whereas for accuracy the Solar Monkey method is preferred. ...
First, a new approach to determine the roof segment orientation was introduced, using both the normal vector and the longest side of the roof segment polygon. A visual inspection was carried out, in which recent aerial images were compared to 3D roof segments that were provided by Readaar. For 145 roofs, the roof segments on which PV was placed were manually selected, such that they could validate the quick-scan. From the visual inspection it was deduced that in-roof obstacles were often not detected. Sometimes the customer had no desire to use the full potential of the roof, or preferred a rectangular panel layout instead of fitting the maximum amount of panels. Another finding was that the distance kept from the roof segment edge was much smaller than initially expected. For pitched roofs, there was virtually no distance between the roof edge and installed panels, while for flat roofs around 20 cm was kept. Using zero distance from the roof edge, the panel placement algorithm still underestimates the roof potential by 17.5% on average, with a relative standard deviation of 46.3%.
Three yield calculation methods were compared: the Solar Monkey method, the SVF & SCF method, and the method without obstacles. The predicted performance or final annual AC yield was compared with the actual measured performance, both measured in kWh/kWp per year. For the three methods, relative standard deviation values of 7.2%, 7.5% and 9.1% were found respectively. The three methods could generate yield predictions for 91.0%, 92.7%, and 93.1% of the 145 roofs. For highly shaded roofs with Sun Coverage Factor values above 0.25, the method neglecting obstacles performed significantly worse. Additionally, the performance of large roofs with an average segment area above 70m2 was generally under-predicted, while the relative standard deviation was highest. It is expected that using one obstacle view is not accurate enough for large roof segments.
The computational speed of the panel fitting algorithm for pitched roofs without internal obstacle segments was found to be 20.1± 5.0 m2s-1, whereas for flat roofs it was found to be 56.9±12.0 m2s-1. In order to optimise the quick-scan algorithm in both speed and accuracy, two filtering steps were carried out. Segments with a pitch angle over 10° and an orientation between 0° to 60° or 300° to 360º were filtered out, since they would have an annual performance below 650 kWh/kWp. Moreover, segments with an area less than 8.4 m2 were filtered out, since they were observed to fit less than 2 panels. The quick-scan calculation times for different yield prediction methods were found to be 15.50±1.01, 14.58±1.13 and 2.75±0.44 seconds per roof, respectively. These times were measured for data sets that had around 2 segments per roof after filtering on segment area and pitched segment orientation. It can be concluded that the method without obstacles is preferred when the calculation time is a limiting factor, whereas for accuracy the Solar Monkey method is preferred.
In this project several topologies of PV panels will be analysed and a new one will be introduced: a floating PV module offshore. The irradiance incident on the panels and how much energy reaches the module at several static and tracking topologies. For the statical PV modules, it will be analysed and discussed which is the optimal tilting angle according to its location, (the latitude is the variable to consider in this case) as well as the monthly energy yield generated on each topology.
Finally, a comparison of incident energy yield per topology (including the new offshore one) will be assessed and discussed, indicating what are the results found in this project, which tools were used to get these results and how they were obtained. ...
In this project several topologies of PV panels will be analysed and a new one will be introduced: a floating PV module offshore. The irradiance incident on the panels and how much energy reaches the module at several static and tracking topologies. For the statical PV modules, it will be analysed and discussed which is the optimal tilting angle according to its location, (the latitude is the variable to consider in this case) as well as the monthly energy yield generated on each topology.
Finally, a comparison of incident energy yield per topology (including the new offshore one) will be assessed and discussed, indicating what are the results found in this project, which tools were used to get these results and how they were obtained.