This study presents a comprehensive analysis of the optical and electronic properties of thin films of molybdenum oxide and tungsten oxide to implement hole-selective contact for heterojunction solar cells. These contacts are currently viewed as an alternative for the fabrication of doping-free solar cells. However, the spreading of this technology is still limited due to the development of S-shaped J-V curves, which affect the electrical performance of the cells, and further optimization in the material deposition process is therefore crucial to overcome these challenges. To improve transition metal oxide-based heterojunction technology, this work investigates the impact of oxygen vacancies on electrical performance, particularly their role in S-shaped J-V curves. Defect density evaluation through nondestructive techniques like photothermal deflection spectroscopy together with a detailed experimental characterization is presented in this paper to highlight the structural and optical properties of the films. Prototypes of solar cells incorporating hole-selective contacts with tungsten and molybdenum oxide are prepared to show S-shaped J-V characteristics under AM 1.5 illumination. An equivalent circuit modeling was used for understanding the electrical characteristics of the prototypes. Furthermore, this approach offers insights into the optimization of the performances of devices.

Integrating photovoltaic (PV) systems in urban areas enhances local renewable electricity production but also reduces surface albedo due to the lower reflectivity of PV panels. This albedo reduction increases Earth's energy absorption, resulting in positive radiative forcing (RF), while the displacement of fossil fuels by PV electricity leads to negative RF through avoided CO₂ emissions. This study quantifies the net RF impact of urban rooftop PV deployment using a novel workflow. This proposed workflow combines: (1) a geometric spectral albedo (GSA) model, using LiDAR data and geo-referenced material maps to simulate albedo changes before and after PV integration; and (2) a simplified skyline-based PV model, using LiDAR-derived roof geometry to estimate annual PV electricity generation. The method is applied to the city of Delft, the Netherlands, and the average simulated albedo of Delft is 0.1584, differing by 6.12 % from MODIS observations (0.1493). Full PV integration on all rooftops reduces the city-wide albedo to 0.1557, corresponding to a positive RF of 3.53×10⁻⁸ W/m². This can be offset in about 40 days by negative RF from PV electricity, assuming a grid carbon intensity of 454 gCO₂-eq/kWh. However, under a low-carbon grid scenario (30 gCO₂-eq/kWh), the payback time increases to 623 days, indicating that positive RF from albedo reduction becomes more relevant in future decarbonized scenarios. This study contributes to understanding the climatic implications of urban PV deployment and offers insights into the realistic potential of PV systems in mitigating climate change.

Polycrystalline silicon (poly-Si) carrier-selective passivating contacts (CSPCs), featuring high photoconversion efficiency (PCE) and cost-effectiveness, have emerged as a promising approach for high-efficiency crystalline silicon (c-Si) solar cells. To minimize parasitic absorption losses induced by doped poly-Si window layers, wide bandgap oxygen-alloyed poly-Si (poly-SiO_x) layers are developed. However, challenges persist in achieving excellent surface passivation for boron-doped poly-SiO_x contact stacks, likely caused by boron diffusion during annealing and the reduced doping concentration resulting from lower crystallinity as oxygen content increases. In this study, we investigate the impact on the passivating contact structure and solar cell performance of a 10-nm thick intrinsic hydrogenated amorphous silicon buffer layer with varying oxygen content (a-Si (O_x):H) deposited by plasma-enhanced chemical vapor deposition (PECVD), and placed between the tunneling silicon oxide (SiO_x) and the poly-SiO_x (p⁺). After the hydrogenation step, we obtain both high passivation quality with implied open circuit voltage (iV_oc) of 728.3 mV and low contact resistivity (ρ_c) of 59.18 mΩ cm² on polished surface for oxygen-free a-Si:H buffer layer. These improvements can be attributed to the appropriate thickness of the tunnel oxide and confirmed by transmission electron microscopy (TEM) images, to higher crystallinity of the buffer layer, which facilitates more efficient doping in the buffer layer. This is evidenced by energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) results. At the device level, a front-side textured, rear-side flat, rear junction poly-SiO_x/poly-SiO_x solar cell on n-type c-Si wafer, an efficiency improvement can be observed from 3.55 % without a PECVD buffer layer to 18.9 % with an oxygen-free a-Si:H PECVD buffer layer. The impact of the buffer layer crystallinity on cell performance is further demonstrated by deploying a 10-nm thick LPCVD buffer layer, which facilitates an efficiency of 21.15 % for the same device structure.

A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD simulations, focusing on the impact of frequency, bias voltage, and the presence of a low–high (LH) junction. It is shown that the PN junction exhibits the behavior of a parallel resistor–capacitor circuit (RC-loop) with fixed element values at low frequencies, but undergoes relaxation in both resistance R_j and capacitance C_j as frequency increases. Moreover, it is revealed that the addition of a LH junction impacts the impedance by altering R_j, C_j, and the series resistance R_s. Finally, while various publications on solar-cell impedance model the LH junction using an RC-loop, the findings in this study indicate that such a model does not accurately represent the underlying physics. Instead, this approach is likely compensating for the frequency-dependent behavior of R_j and C_j.

In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm²/Vs, a carrier concentration of 1.65 × 10²⁰/cm³, and a resistivity of 8.56 × 10⁻⁴ Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (J_SC) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.

This paper presents dynamic air-based models of a hybrid photovoltaic-thermal (PVT) collector. The models are developed with the aim of estimating the temperature of the collector components and therefore of estimating the annual generation of electrical energy and thermal energy outputs, by using actual climate data of six different cities based on Köppen-Geiger-Photovoltaic (KGPV) climate zones. The results show that the unglazed type collector has the best PV cooling while the dual channel collector has the best air heating among air-based PVT collectors. The results also indicate that the use of additional fluid enhances both electrical and thermal performance. The dynamic models are validated by comparison with results found in the literature. The paper also discusses a novel bi-fluid PVT system combined with a storage tank and an H-infinity based robust controller that can handle uncertainties. The results of the bi-fluid system show that the fraction of energy demand covered by the system is highly dependent on climate conditions and the collector's surface area. It was found that for a small-scale house (standard for four people), the proposed system can cover more than 70% annual domestic hot water demand for cities with high solar irradiance and 32% for a city with low solar irradiance.

Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation-assisted design and optimization of SHJ solar cells featuring MoO_x hole collectors with ultra-thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoO_x as the hole transport layer (HTL) and three types of n-contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc-Si:H/a-Si:H) and trilayer (nc-SiO_x:H/nc-Si:H/a-Si:H) as n-contacts performed electronically and optically better than monolayer (a-Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten-doped indium oxide (IWO) and optimized MgF₂ layers are applied on both sides of front/back-contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n-contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoO_x and n-contact side, respectively. Specifically, when illuminating from the MoO_x side, the short-circuit current density and the fill factor remain well above 40 mA cm⁻² and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n-contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoO_x side and the n-layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n-type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n-type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%.

Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WO_x-based SHJ solar cells with 23.30 % conversion efficiency and V₂O_x-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells.

Clouds moving in front or away from the sun are the leading cause of irradiance variability. These variations have a repercussion on the electricity production of photovoltaic systems. Predicting such changes is essential for proper control of these systems and for maintaining grid stability. Images from the sky have proven to help with short-term solar irradiance forecasting, especially when combined with artificial intelligence. Nevertheless, these models tend to smooth the irradiance fluctuations. We propose a forecasting model to predict the clear-sky index in a forecast horizon of 20 min with a 1-minute resolution. Our model, based on a classifier to determine the sky conditions and, on an optical flow, applies an artificial intelligence model explicitly trained on each class of sky conditions. This strategy has an equivalent performance to an unclassified model and a forecast skill between 5 and 20% with respect to the smart persistence model for most classes of sky conditions while requiring considerably less training data. Although our model reduces the overall predicting error, it still has difficulties predicting irradiance changes and mainly overcast days. Our classifying strategy can be applied to other models targeting different objectives to predict sudden changes in either irradiance or power related to photovoltaic systems.

This work is a long-term, interannual, and experimental study conducted in multiple locations. It studies the effects of phase change materials (PCMs) on photovoltaic modules’ performance by reducing their operational temperature. Two PV modules were manufactured so that PCM slabs could be mechanically attached to their backside, ensuring contact with the related photovoltaic active area. Experiments were conducted in Delft, Netherlands, from 2019 until 2021 and in Catania, Italy, during the winter and start of spring of 2023. The experiment also considered two installation layouts: building integrated (Delft) and standard rack-mounted (Catania). The measurements showed that the PCM provides significant cooling under both locations, with a temperature reduction of up to 15 °C. In Delft, thermal control could be obtained for most of the sunny hours of the day, even during the summer months. In Catania, the module with PCM presented, on occasion, higher temperatures than its standard counterpart, primarily due to winter-time environmental conditions. However, the PCM provided sufficient thermal control on all conditions, ensuring increased energy yield. This increase ranged from 2.1 to 2.5 % in Delft and 1.3–1.6 % in Italy.

This work presents a practical approach to designing an optical filter for thermal management for photovoltaic modules. The approach emphasizes the practicality of manufacturing over optical performance. Simulation work demonstrates that, for an interdigitated back contact solar cell architecture, complete rejection of infrared radiation offers limited thermal benefits requiring highly complex optical filter designs. An alternative approach consists of reducing thermalization losses by providing reflectance at lower wavelength values. An optical filter design that fulfills this requirement is possible using simple structures based on two materials and taking advantage of the harmonics present in quarter wavelength optical thickness designs. The filter is later optimized for angular performance via second-order algorithms, resulting in a device consisting of only 15 thin-film layers. Performance simulations on two locations, Delft (the Netherlands) and Singapore, estimate a temperature reduction of 2.20°C and 2.45°C, respectively. In a single year, the optical loss produced by the filter is not compensated via temperature reduction. However, improvements in the annual degradation rate show that in Singapore, the overall effect of the filter on the lifetime DC energy yield is positive.

Nowadays, an increasing share of photovoltaic (PV) systems makes use of module- or submodule-level power electronics (PE). Furthermore, PE is used in stand-alone devices powered by PV-storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein, the COSMOS device is introduced, denoting COmbined Solar cell and metal-oxide-semiconductor field-effect transistor (MOSFET). Specifically, the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel-oxide passivated contacts (TOPCon) on a single wafer is reported. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost-effective integration of the MOSFET. Both n-type solar cells with integrated p-channel MOSFETs (PMOS) and p-type solar cells with integrated n-channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on-resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off-state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n-type and p-type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices.

Solar photovoltaic (PV) energy is variable. The output power can change considerably in a matter of minutes, imposing challenges on the control of systems connected downstream. The power from these systems can be smoothed using electric storage, potentially increasing the system cost. An alternative is to deliberately curtail the power before it starts to change. This strategy relies on ultra-short-term forecasting to determine the curtailment point. Unfortunately, forecasting is prone to errors and high uncertainty even in the very short-term, leading to control errors. We propose an active power curtailment control strategy for a stand-alone solar photovoltaic system powering an electrolyzer. Our work's novelty relies on the controller's ability to deal with large forecasting errors and high uncertainty, combining artificial intelligence for predicting the power ramps and fuzzy logic to account for imperfect prediction. We validated our approach using a hardware emulator of the photovoltaic system, power converter and electrolyzer. Under clear sky conditions, the curtailment results in unnecessary energy loss, while under variable irradiance, the controller successfully smooths the power ramps within 10% of the PV system's nominal power. Although our approach was designed for a stand-alone system, its concept can be directly applied to grid-connected systems as well.